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Enhanced nonlinear interaction effects in a four-mode optomechanical ring 期刊论文  OAI收割
PHYSICAL REVIEW A, 2018, 卷号: 98, 期号: 3, 页码: 33836
作者:  
Jin, LJ;  Qiu, J;  Chesi, S;  Wang, YD
  |  收藏  |  浏览/下载:33/0  |  提交时间:2018/12/27
Sagnac interferometry as a probe to the commutation relation of a macroscopic quantum mirror 期刊论文  OAI收割
Physical Review A, 2010, 卷号: 82, 期号: 3, 页码: 32120
作者:  
Yang R;  Gong XF;  Pei SY;  Luo ZR;  Lau YK
收藏  |  浏览/下载:16/0  |  提交时间:2011/03/01
Feedback coupling loss in single mode fiber lasers 期刊论文  OAI收割
optics communications, 2008, 卷号: 281, 期号: 8, 页码: 2189-2194
作者:  
Li, Jianfeng;  Duan, Kailiang;  Guo, Yongkang;  Gao, Fuhua;  Lin, Xiangdi
收藏  |  浏览/下载:14/0  |  提交时间:2011/09/30
The full hemisphere integrating measurement of the reflectance of black cavity (EI CONFERENCE) 会议论文  OAI收割
ICO20: Illumination, Radiation, and Color Technologies, August 21, 2005 - August 26, 2005, Changchun, China
作者:  
Wang Y.;  Yu B.;  Wang Y.;  Wang Y.;  Wang Y.
收藏  |  浏览/下载:18/0  |  提交时间:2013/03/25
The conical black cavities are used in the Solar Irradiance Absolute Radiometers (SIARs) of the solar constant monitor aboard on the SZ spaceship and of the Solar Total Irradiance Monitor (STIM) aboard on sun-synchronous polar orbit weather satellites. A low reflectance measurement instrument which is used for making the integrating measurement on the reflectance of the conical black cavity in a high precision within the full hemisphere (include the entrance of the Ulbrichtsphere) has been constructed. The characteristic of the instrument is the employment of a semi-transparent mirror  which is mounted in an inclination angle of 45 degrees in front of the entrance of the Ulbrichtsphere. The incident beam is reflected to the black cavity or white board by the semi-transparent mirror. A portion of those  which is made diffused reflection through the black cavity or white board  is measured by the detector located in the side face of the Ulbrichtsphere  and the other portion which is reflected to the entrance is measured by the other detector  after passing through the semi-transparent mirror  and then being focused on by an ellipsoidal mirror. The two measurement data are added up to get the integrating reflectance within full hemisphere. The presentation and verification on the measurement result of the reflectance of the black cavity and its precision are described in this article. The absolute accuracy can reach 0.012%.  
Experimental investigation of intracavity absorber low temperature GaAs in diode-pumped Nd : GdVO4 laser 期刊论文  OAI收割
japanese journal of applied physics part 1-regular papers brief communications & review papers, 2006, 卷号: 45, 期号: 8a, 页码: 6268-6270
Liu J (Liu Jie); Wang CX (Wang Chunxing); Tian WM (Tian Wenmiao); Liu SH (Liu Shihua); Wang GG (Wang Guanggang); Wang YG (Wang Yonggang)
收藏  |  浏览/下载:41/0  |  提交时间:2010/04/11
Vertical-external-cavity surface-emitting lasers operating at different wavelength: Design, numerical simulation, and characteristics (EI CONFERENCE) 会议论文  OAI收割
Optoelectronic Materials and Devices for Optical Communications, November 7, 2005 - November 10, 2005, Shanghai, China
作者:  
Qin L.;  Jiang H.;  Wang L.;  Wang L.;  Wang L.
收藏  |  浏览/下载:19/0  |  提交时间:2013/03/25
Theoretical analysis of 980nm high power Vertical External-cavity Surface-emitting Semiconductor Laser (VECSEL) (EI CONFERENCE) 会议论文  OAI收割
ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China
作者:  
Wang L.-J.;  Wang L.-J.;  Ning Y.-Q.;  Qin L.
收藏  |  浏览/下载:22/0  |  提交时间:2013/03/25
By using bottom-emitting structure  we will develop laser diode (LD) pumped 980 nm VECSEL with active region of InGaAs/GaAsP/AlGaAs system. Because the thickness of barrier layer and absorption layer exceed that of quantum well  single well approximation model (KP method) can be used to calculate the band structure of VECSEL. The Schrodinger equation of finite deep potential well can be adopted to calculate the energy level structures of electron  heavy and light holes. According to the transition selection rule  we theoretically obtained the emitting wavelength of VECSEL and calculated quasi-Femi energy of valence band and conduction band based on the analysis of energy level structure of electron and holes. By analyzing the gain of strained quantum wells  we calculated the gain of VECSEL using transition matrix elements of electron  heavy and light holes. We give out the threshold gain  output power and other characteristic parameters. We will study the configuration of VECSEL and pumping scheme. We designed external cavity mirror  active region and bottom-emitting structure. A LD-pumped vertical external cavity surface-emitting laser whose output power is greater than 1.0 W can be predicted.  
Study on LD-pumped Nd:YAG laser cutter (EI CONFERENCE) 会议论文  OAI收割
ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China
作者:  
Zhang G.;  Zhang G.;  Zhang G.;  Zhang J.;  Zhang J.
收藏  |  浏览/下载:22/0  |  提交时间:2013/03/25
The theory of laser cutter and the technology neck is analyzed. We can conclude that it is almost impossible to deal with the waste thick silicon wafers which are yielded in producing silicon wafers by conventional eroding or diamond cutting  when the cutting velocity equals 100mm/min  while it is also unperfected with ecumenical laser cutter without good beam quality or precise laseroptics system. It is represented that high average power and high repetition rate laser with good beam quality and precise laseroptics system are pivotal to obtain excellent cutting effect such as thick groove depth  double-layer 0.75mm thick silicon wafer can be penetrated.. The cross section is fine and the groove is narrow  rapid cutting speed  the cutting quality meets the expecting demand.  fine kerf section without considering the effect of technique. Considering laser medium thermal lens effect and thermal focal length changing with pumping power  using plano-convex high reflectivity mirror as the back cavity mirror to compensate the heat lens influence  a /4 waveplate to compensate heat -induced birefraction  utilize the Nd:YAG self- aperture effect  more than 50 W average power 1.064 um IR output is obtained with beam quality factor (M2) equals 3.19. Through the LD-Pumped Nd:YAG laser cutter we developed with short focus length negative spherical aberration focusing lens  double axis linear step motor positioning system  suitable beam expander multiplying factor  appropriate diameter of exit beam aperture  proper repetition rate  when the cutting velocity equals 400mm/min  0.75mm thick silicon wafer can be penetrated