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	Effects of Annealing Process on Microstructure and Mechanical Properties of TC6 Titanium Alloy Bars 期刊论文 OAI收割 RARE METAL MATERIALS AND ENGINEERING, 2017, 卷号: 46, 页码: 80-84 作者: Lei Xiaofei; Dong Limin; Zhang Zhiqiang; Ba Hongbo; Wang Haizhong \| 收藏 \| 浏览/下载：22/0 \| 提交时间：2021/02/02 TC6 titanium alloy annealing temperature cooling mode microstructure mechanical properties
	Comprehensive evaluation method in the cooling mode of large-scale hydro-generators 期刊论文 OAI收割 ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 17 作者: Teng Qi-Zhi; Tan Xin; Wu Zi-Yu; Shen Jun; Wang Hai-Feng 收藏 \| 浏览/下载：34/0 \| 提交时间：2015/12/21 hydro-generator cooling mode analytic hierarchy process comprehensive evaluation
	808nm high-power high-efficiency GaAsP/GaInP laser bars (EI CONFERENCE) 会议论文 OAI收割 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China 作者: Wang Y.; Wang L.; Wang L.; Wang L.; Liu Y. 收藏 \| 浏览/下载：22/0 \| 提交时间：2013/03/25 808nm high power diode lasers which is rapidly maturing technology technically and commercially since the introduction in 1999 of complete kilowatt-scale diode laser systems have important applications in the fields of industry and pumping solid-state lasers (DPSSL). High power and high power conversion efficiency are extremely important in diode lasers and they could lead to new applications where space weight and electrical power are critical. High efficiency devices generate less waste heat which means less strain on the cooling system and more tolerance to thermal conductivity variation a lower junction temperature and longer lifetimes. Diode lasers with Al-free materials have superior power conversion efficiency compared with conventional AlGaAs/GaAs devices because of their lower differential series resistance and higher thermal conductivity. 808nm GaAsP/GalnP broad-waveguide emitting diode laser bars with 1mm cavity length have been fabricated. The peak power can reach to 100.9W at 106.5A at quasicontinuous wave operation (200s 1000Hz). The maximum power conversion efficiency is 57.38%. Based on these high power laser bars we fabricate a 1 3 arrays the maximum power is 64.3 W in continuous wave mode when the current is 25.0A. And the threshold current is 5.9A the slope efficiency is 3.37 W/A. 2008 SPIE.
	High power VCSEL device with periodic gain active region (EI CONFERENCE) 会议论文 OAI收割 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China 作者: Zhang Y.; Liu Y.; Liu Y.; Liu Y.; Qin L. 收藏 \| 浏览/下载：29/0 \| 提交时间：2013/03/25 High power vertical cavity surface emitting lasers with large aperture have been fabricated through improving passivation lateral oxidation and heat dissipation techniques. Different from conventional three quantum well structure a periodic gain active region with nine quantum wells was incorporated into the VCSEL structure with which high efficiency and high power operation were expected. The nine quantum wells were divided into three groups with each of them located at the antinodes of the cavity to enhance the coupling between the optical field and the gain region. Large aperture and bottom-emitting configuration was used to improve the beam quality and the heat dissipation. A maximum output power of 1.4W was demonstrated at CW operation for a 400m-diameter device. The lasing wavelength shifted to 995.5nm with a FWHM of 2nm at a current of 4.8A due to the internal heating and the absence of active water cooling. A ring-shape farfield pattern was induced by the non-homogeneous lateral current distribution in large diameter device. The light intensity at the center of the ring increased with increasing current. A symmetric round light spot at the center and single transverse mode operation with a divergence angle of 16 were observed with current beyond 4.8A.