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Novel differential pumping system with extended sampling range: Design and application in the EAST tokamak 期刊论文  OAI收割
VACUUM, 2024, 卷号: 227
作者:  
Sun, Hao;  Yu, Yaowei;  Wang, Chao;  Pan, Hao;  Fan, Bin
  |  收藏  |  浏览/下载:10/0  |  提交时间:2024/11/22
单井抽水加剧地裂缝上下盘差异沉降机理 期刊论文  OAI收割
工程地质学报, 2023, 卷号: 31, 期号: 1, 页码: 299
作者:  
申正洋;  李新生;  黄华;  孟宏特;  谢冬洲
  |  收藏  |  浏览/下载:2/0  |  提交时间:2025/06/27
A near ambient pressure photoemission electron microscope (NAP-PEEM) 期刊论文  OAI收割
ULTRAMICROSCOPY, 2019, 卷号: 200, 页码: 105-110
作者:  
Ning, Yanxiao;  Fu, Qiang;  Li, Yifan;  Zhao, Siqin;  Wang, Chao
  |  收藏  |  浏览/下载:107/0  |  提交时间:2019/06/20
Experimental techniques for in-ring reaction experiments 期刊论文  OAI收割
PHYSICA SCRIPTA, 2015, 卷号: T166, 页码: 5
作者:  
Kollmus, H.;  Kroell, T.;  Kuilman, M.;  Najafi, M. A.;  Chung, L. X.
  |  收藏  |  浏览/下载:40/0  |  提交时间:2018/05/31
Experimental techniques for in-ring reaction experiments 会议论文  OAI收割
作者:  
Kalantar-Nayestanaki, N.;  EXL Collaboration;  Zamora, J. C.;  Yue, K.;  Traeger, M.
  |  收藏  |  浏览/下载:38/0  |  提交时间:2018/08/20
Research for a clean and large throughput differential pumping system 期刊论文  OAI收割
CHINESE PHYSICS C, 2008, 卷号: 32, 期号: Suppl. 1, 页码: 59-61
作者:  
Meng Jun;  Yang Xiao-Tian;  Zhang Su-Ping;  Chu Ji-Guo
  |  收藏  |  浏览/下载:34/0  |  提交时间:2010/10/29
808nm high-power high-efficiency GaAsP/GaInP laser bars (EI CONFERENCE) 会议论文  OAI收割
Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China
作者:  
Wang Y.;  Wang L.;  Wang L.;  Wang L.;  Liu Y.
收藏  |  浏览/下载:26/0  |  提交时间:2013/03/25
808nm high power diode lasers  which is rapidly maturing technology technically and commercially since the introduction in 1999 of complete kilowatt-scale diode laser systems  have important applications in the fields of industry and pumping solid-state lasers (DPSSL). High power and high power conversion efficiency are extremely important in diode lasers  and they could lead to new applications where space  weight and electrical power are critical. High efficiency devices generate less waste heat  which means less strain on the cooling system and more tolerance to thermal conductivity variation  a lower junction temperature and longer lifetimes. Diode lasers with Al-free materials have superior power conversion efficiency compared with conventional AlGaAs/GaAs devices because of their lower differential series resistance and higher thermal conductivity. 808nm GaAsP/GalnP broad-waveguide emitting diode laser bars with 1mm cavity length have been fabricated. The peak power can reach to 100.9W at 106.5A at quasicontinuous wave operation (200s  1000Hz). The maximum power conversion efficiency is 57.38%. Based on these high power laser bars  we fabricate a 1 3 arrays  the maximum power is 64.3 W in continuous wave mode when the current is 25.0A. And the threshold current is 5.9A  the slope efficiency is 3.37 W/A. 2008 SPIE.