机构

• 长春光学精密机械与物... [2]
• 近代物理研究所 [2]
• 金属研究所 [1]
• 化学研究所 [1]
• 半导体研究所 [1]

采集方式

• OAI收割 [7]

内容类型

• 期刊论文 [5]
• 会议论文 [2]

发表日期

• 2017 [2]
• 2015 [1]
• 2014 [1]
• 2013 [1]
• 2011 [1]
• 2005 [1]
• 更多

学科主题

• 半导体物理 [1]

筛选

浏览/检索结果: 共7条，第1-7条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序作者升序作者降序 A diffusion model for solute atoms diffusing and aggregating in nuclear structural materials 期刊论文  OAI收割 CHINESE PHYSICS B, 2017, 卷号: 26, 页码: 7 作者:  Song, Quan;  Meng, Fan-Xin;  Ning, Bo-Yuan;  Zhuang, Jun;  Ning, Xi-Jing   |  收藏  |  浏览/下载：223/0  |  提交时间：2018/05/31 atomistic modeling  diffusion growth  metal tritides  nucleation and growth  helium bubble   Long-time atomistic dynamics through a new self-adaptive accelerated molecular dynamics method 期刊论文  OAI收割 JOURNAL OF PHYSICS-CONDENSED MATTER, 2017, 卷号: 29, 页码: 8 作者:  Gao, N.;  Yang, L.;  Gao, F.;  Kurtz, R. J.;  West, D.   |  收藏  |  浏览/下载：26/0  |  提交时间：2018/05/31 accelerated molecular dynamics  free energy surface  helium-vacancy cluster  Ostwald ripening mechanism  diffusion and growth   Growth and Etching of Monolayer Hexagonal Boron Nitride 期刊论文  OAI收割 ADVANCED MATERIALS, 2015, 卷号: 27, 期号: 33, 页码: 4858-4864 作者:   收藏  |  浏览/下载：29/0  |  提交时间：2015/10/26 chemical vapor deposition  diffusion  growth and etching  hexagonal boron nitride   Precise Cr-marker investigation on the reactive interface in the eutectic SnIn solder joint 期刊论文  OAI收割 Materials Letters, 2014, 卷号: 121, 页码: 185-187 F. F. Tian; P. J. Shang; Z. Q. Liu 收藏  |  浏览/下载：20/0  |  提交时间：2014/07/03 Interfaces  Intermetallic alloys and compounds  Diffusion  Kirkendall  void  SnIn solder  cu substrate  growth-kinetics  snagcu solder  diffusion  compound  identification  ni   Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique (EI CONFERENCE) 会议论文  OAI收割 2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China 作者:  Zhang T. 收藏  |  浏览/下载：42/0  |  提交时间：2013/03/25 InP/In0.82Ga0.18As/InP heterostructure used for infrared detector were grown on (100) S-doped InP substrates using two-step growth technique by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn  TMGa  AsH3  and PH3 as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power  their temperatures were detected by a thermocouple  and the reactor pressure was kept at 10000 Pa. The growth structure of detector included In0.82Ga0.18As buffer with the thickness of 100 nm  In0.82Ga0.18As absorption layer with the thickness of 2.8 m  and the InP cap with the thickness of 0.8 m. The planar type of p-i-n detector was fabricated by Zn diffusion. The properties of In0.82Ga0.18As detector were studied  the curves of the I-V characteristics  the range of response spectrum  and the detectivity (D*) were obtained. (2013) Trans Tech Publications  Switzerland.   First principles study of the electronic properties of twinned SiC nanowires 期刊论文  OAI收割 journal of nanoparticle research, JOURNAL OF NANOPARTICLE RESEARCH, 2011, 2011, 卷号: 13, 13, 期号: 1, 页码: 185-191, 185-191 作者:  Wang ZG;  Wang SJ;  Zhang CL;  Li JB;  Wang, ZG, Univ Elect Sci & Technol China. , Dept Appl Phys, Chengdu 610054, Peoples R China. zgwang@uestc.edu.cn   |  收藏  |  浏览/下载：113/6  |  提交时间：2011/07/05 Twinned SiC nanowires  Electronic properties  Ab initio  Modeling and simulation  SILICON-CARBIDE NANOWIRES  FIELD-EMISSION PROPERTIES  MOLECULAR-BEAM EPITAXY  INAS NANOWIRES  GROWTH  NANOTUBES  NITRIDE  DIFFUSION  NANORODS  ENERGY  Twinned Sic Nanowires  Electronic Properties  Ab Initio  Modeling And Simulation  Silicon-carbide Nanowires  Field-emission Properties  Molecular-beam Epitaxy  Inas Nanowires  Growth  Nanotubes  Nitride  Diffusion  Nanorods  Energy   Formation and characteristics of quantum dots of wide band gap II-VI semiconductor (EI CONFERENCE) 会议论文  OAI收割 Fifth International Conference on Thin Film Physics and Applications, May 31, 2004 - June 2, 2004, Shanghai, China Fan X. W.; Shan C. X.; Yang Y.; Zhang J. Y.; Liu Y. C.; Lu Y. M.; Shen D. Z. 收藏  |  浏览/下载：30/0  |  提交时间：2013/03/25 CdSe and ZnCdSe quantum dots (QDs) were grown under Stranski-Krastanow (S-K) mode by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The formation process of CdSe QDs below critical thickness was observed by atomic force microscopy (AFM). The formation mechanism of CdSe QDs below the critical thickness was due to the effect of surface diffusion and strain release. ZnCdSe QDs were grown based on the calculated critical thickness. Two kinds of variations in the ZnCdSe QDs appeared over time  the Ostwald ripening process and dot formation process. ZnSeS dots were grown under Volmer-Weber (V-W) mode. With increasing the growth duration  the size of dots becomes larger and the density decreases  which is explained by virtue of the surface free energy.