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	Identification and biochemical characterization of DC07090 as a novel potent small molecule inhibitor against human enterovirus 71 3C protease by structure-based virtual screening 期刊论文 OAI收割 EUROPEAN JOURNAL OF MEDICINAL CHEMISTRY, 2016, 卷号: 124, 页码: 981-991 作者: Ma, Guang-Hui; Ye, Yan; Zhang, Dan; Xu, Xin; Si, Pei \| 收藏 \| 浏览/下载：43/0 \| 提交时间：2019/01/08 HFMD EV71 3C(Pro) Non-peptidyl inhibitor Virtual screening
	基于二噻吩并咔唑与苯并噻二唑的 D-A 型共轭聚合物的合成与表征学位论文 OAI收割硕士, 中国科学院长春应用化学研究所: 中国科学院研究生院, 2015 作者: 荣梓清收藏 \| 浏览/下载：62/0 \| 提交时间：2016/04/27 由于给体片段（D）和受体片段（A）间的电荷转移 D-A型共轭高分子通常具有较小的光学带隙且分子偶极矩较大分子间相互作用较强利于获得高的载流子迁移率因此 D-A型共轭聚合物是有机太阳能电池材料领域的研究热点。另一方面稠环分子由于具有刚性平面的构型重组能小等优点而被广泛引入D-A型共轭聚合物体系中。因此本文以二噻吩并[2 3-b:7 6-b]咔唑（C1）和二噻吩并[3 2-b:6 7-b]咔唑（C2）两个稠环单元作为给体片段苯并噻二唑（BT）单元作为受体片段合成了一系列D-A型共轭聚合物并且对它们的光物理性质电化学性质载流子传输和光伏特性进行了系统研究主要成果和创新点如下：（1）合成了基于二噻吩并咔唑和烷氧基取代的BT单元的两个聚合物P(BT-C1)和P(BT-C2) 它们均是无定形聚合物。尽管P(BT-C1)和P(BT-C2)在分子结构上只有硫原子位置不同的差别但两者在长波长和短波长范围表现出完全相反的相对吸收强度。通过理论模拟可以发现两个聚合物骨架构象完全不同 P(BT-C1)的骨架较为弯曲而P(BT-C2)的骨架线性较好。因此基于P(BT-C2)的有机薄膜晶体管（OTFT）的迁移率较高达到5.4×10-3 cm2V-1s-1 而P(BT-C1)的OTFT迁移率较低为1.9×10-3 cm2V-1s-1。 P(BT-C2)的HOMO能级比P(BT-C1)深0.2 eV左右因此基于P(BT-C2)的体异质结有机太阳能电池（OSC）器件的开路电压（Voc）明显高于P(BT-C1) 而P(BT-C1)与PC71BM共混薄膜相分离更加明显导致P(BT-C1)的OSC器件的短路电流密度（Jsc）和填充因子（FF）较高两个聚合物的能量转换效率（PCE）相差不多均在5%左右。（2）以C2为给体单元 BT和二氟代BT为受体单元合成了两个共轭聚合物P(C6BT-C2)和P(C6BT2F-C2)。与P(BT-C2)相比 P(C6BT-C2)具有较高的热稳定性 HOMO能级升高光谱红移。在BT单元上引入F原子后聚合物的HOMO能级由P(C6BT-C2)的-5.00 eV降低到P(C6BT2F-C2)的-5.20 eV 同时帯隙变窄。理论模拟发现两者的分子平面性比P(BT-C2)有很大改善但分子骨架构象较为弯曲。基于P(C6BT-C2)与P(C6BT2F-C2)的OTFT器件在150 oC退火后载流子迁移率分别为4.8×10-3 和4.9×10-3 cm2V-1s-1 。由于与PC71BM共混薄膜的相分离不明显基于P(C6BT-C2)与P(C6BT2F-C2)的OSC器件的Jsc和FF较低 PCE均小于2%。
	Characteristics of ZnMgO-based metal-semiconductor-metal photodetectors (EI CONFERENCE) 会议论文 OAI收割 International Symposium on Photoelectronic Detection and Imaging, ISPDI 2007: Photoelectronic Imaging and Detection, September 9, 2007 - September 12, 2007, Beijing, China 作者: Zhang J.; Li B.; Li B.; Li B.; Zhao Y. 收藏 \| 浏览/下载：25/0 \| 提交时间：2013/03/25 In recent years ZnMgO semiconductor alloys with a direct bandgap tunable between 3.37 eV and 7.8 eV become one of the most suitable materials for the fabrication of ultraviolet detectors. In this paper we have fabricated metal-semiconductor-metal photodetectors on 1-m thick Zn 0.8Mg0.2O films. The interdigital metal electrodes are 500 m long and 5 m wide with an interelectrode spacing 2 m 5 m and 10 m respectively. Zn0.8Mg0.2O films were grown on quartz by ratio frequency magnetron sputtering at 500C. Dark current spectral responsivity and pulse response were carried out for the devices with different finger pitches. All the photodetectors showed the peak responsivity at 330 nm and the ultraviolet-visible rejection ratio (R330 nm/R400 nm) is more than four orders of magnitude at 3 V bias. For the device with 2 m finger pitch the detectivity was calculated as 4.21011 cm Hz 1/2/W at 330 nm. Furthermore the transient response measurement for all devices revealed similar rise time of 10 ns. The 90%-10% fall times are 130 ns 170 ns and 230 ns for the devices with different finger pitches of 2 m 5 m and 10 m respectively..
	Temperature-enhanced ultraviolet emission in ZnO thin film (EI CONFERENCE) 会议论文 OAI收割 Zhang Y. J.; Xu C. S.; Liu Y. C.; Liu Y. X.; Wang G. R.; Fan X. W. 收藏 \| 浏览/下载：30/0 \| 提交时间：2013/03/25 We have studied the structural and optical properties of ZnO thin films prepared by thermal oxidation of ZnS films deposited by plasma assisted electron-beam evaporation on Si(1 0 0) substrates. The transformation from zinc blende ZnS to hexagonal wurtzite ZnO is confirmed by Raman and X-ray diffraction (XRD) measurement. For the sample thermally oxidized at 600 C for 2 h a novel UV emission peak Ix located at 3.22 eV (385 nm) has been observed. The temperature-dependent photoluminescence spectra show that the integrated intensity of Ix increases exponentially with increasing temperatures within the measuring temperature range from 80 to 300 K but the peak position remains nearly constant. We explain this behavior in terms of electron tunneling into the radiative recombination centers.
	1GeV/c广量程磁谱仪期刊论文 OAI收割高能物理与核物理, 1991, 期号: 4, 页码: 289-297 作者: 毛振麟; 王子华; 张勤俭; 后晓江; 王功利收藏 \| 浏览/下载：45/0 \| 提交时间：2015/12/07 磁谱仪 eV/c 多次散射数据获取系统位置灵敏探测器簇射计数器探测器系统多丝正比室闪烁计数器动态范围
	200GeV/c的质子-核碰撞中产生粒子的多重数分布与能量亏损期刊论文 OAI收割高能物理与核物理, 1987, 期号: 12, 页码: 231-237 作者: 刘波; 王英才收藏 \| 浏览/下载：32/0 \| 提交时间：2015/12/10 多重数 eV/c 靶核入射粒子多次碰撞多粒子产生模型分析非弹性碰撞强子一次碰撞