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	Atomic modeling of the segregation of vacancies on < 111 > dislocations in alpha-iron by diffusive molecular dynamics simulations 期刊论文 OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2021, 卷号: 857 作者: Zhang, Biao; Guo, Yaolin; Liu, Zhen; Li, Meie; Shi, Diwei \| 收藏 \| 浏览/下载：24/0 \| 提交时间：2021/12/01 SELF-POINT DEFECTS SCREW DISLOCATIONS EDGE DISLOCATIONS PEIERLS STRESS SLIP SYSTEMS OXIDATION CLUSTERS FE TEMPERATURE PLASTICITY
	The defect evolution in homoepitaxial AlN layers grown by high-temperature metal-organic chemical vapor deposition 期刊论文 OAI收割 Crystengcomm, 2018, 卷号: 20, 期号: 19, 页码: 2720-2728 作者: Jiang, K.; Sun, X. J.; Ben, J. W.; Jia, Y. P.; Liu, H. N. \| 收藏 \| 浏览/下载：17/0 \| 提交时间：2019/09/17 light-emitting-diodes screw dislocations threading dislocations phase epitaxy gan films algan core edge generation Chemistry Crystallography
	Atomistic Simulations of the Effect of Helium on the Dissociation of Screw Dislocations in Nickel 期刊论文 OAI收割 CHINESE PHYSICS LETTERS, 2016, 卷号: 33, 期号: 2, 页码: — 作者: Xu, J; Wang, CB; Zhang, W; Ren, CL; Gong, HF 收藏 \| 浏览/下载：26/0 \| 提交时间：2016/09/12 MOLECULAR-DYNAMICS SIMULATION STRUCTURAL-MATERIALS EDGE DISLOCATIONS STRESS CRYSTALS ALUMINUM ATOMS LOOPS NI
	Interstitial loop strengthening upon deformation in aluminum via molecular dynamics simulations 期刊论文 OAI收割 Acta Materialia, 2013, 卷号: 61, 期号: 9, 页码: 3499-3508 H. Wang; D. S. Xu; P. Veyssiere; R. Yang 收藏 \| 浏览/下载：24/0 \| 提交时间：2013/12/24 Plasticity Hardening Molecular dynamics Dislocation Prismatic loop stacking-fault tetrahedra dislocation dynamics temperature-dependence edge dislocation quenched gold atomic-scale fcc metals part i dipole annihilation screw dislocations
	Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films 期刊论文 OAI收割 Applied Physics Letters, 2009, 卷号: 95, 期号: 4 作者: Zhang SM; Yang H(杨辉) 收藏 \| 浏览/下载：15/0 \| 提交时间：2010/01/15 edge dislocations gallium compounds III-V semiconductors impurities photoluminescence semiconductor doping semiconductor thin films silicon wide band gap semiconductors X-ray diffraction
	Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films 期刊论文 OAI收割 applied physics letters, 2009, 卷号: 95, 期号: 4, 页码: art. no. 041901 作者: Yang H; Wang H; Wang H; Wang YT; Yang H 收藏 \| 浏览/下载：68/1 \| 提交时间：2010/03/08 edge dislocations gallium compounds III-V semiconductors impurities photoluminescence semiconductor doping semiconductor thin films silicon wide band gap semiconductors X-ray diffraction
	Molecular dynamics simulation of kink in (100) edge dislocation in body centred cubic iron 期刊论文 OAI收割 Chinese Science Bulletin, 2007, 卷号: 52, 期号: 16, 页码: 2291-2296 L. Q. Chen; C. Y. Wang; T. Yu 收藏 \| 浏览/下载：25/0 \| 提交时间：2012/04/13 molecular dynamics edge dislocation kink structure bcc iron screw dislocations atomistic simulation transition-metals bcc lattice relaxation principles energies silicon
	Influence of cracks generation on the structural and optical properties of GaN/Al0.55Ga0.45N multiple quantum wells 期刊论文 OAI收割 applied surface science, 2006, 卷号: 252, 期号: 8, 页码: 3043-3050 作者: Zhang SM 收藏 \| 浏览/下载：93/0 \| 提交时间：2010/04/11 nitrides multiple quantum wells cracks dislocations vacancies x-ray diffraction X-RAY-DIFFRACTION EDGE DISLOCATIONS GAN FILMS SUPERLATTICES RELAXATION STRAIN
	A model of dislocations at the interface of the bonded wafers 会议论文 OAI收割 conference on optical interconnects for telecommunication and data communications, beijing, peoples r china, nov 08-10, 2000 作者: Han WH; Wang LC 收藏 \| 浏览/下载：20/0 \| 提交时间：2010/10/29 wafer bonding heteroepitaxy lattice mismatch edge-like dislocations thermal stress 60 degrees dislocation lines GAAS