中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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Discussion of absolute configuration for bioactive Griseusins by comparing computed optical rotations and electronic circular dichroism with the experimental results 期刊论文  OAI收割
TETRAHEDRON, 2014, 卷号: 70, 期号: 44, 页码: 8236-8243
作者:  
Zhu, Hua-Jie;  Li, Wen-Xin;  Hu, Dong-Bao;  Wen, Meng-Liang
收藏  |  浏览/下载:34/0  |  提交时间:2015/01/20
The Enhanced Even and Pitting Corrosion Resistances of Bulk Nanocrystalline Steel in HCl Solution 期刊论文  OAI收割
Steel Research International, 2012, 卷号: 83, 期号: 8, 页码: 800-807
S. G. Wang; M. Sun; K. Long
收藏  |  浏览/下载:36/0  |  提交时间:2013/02/05
Thermoelectric Response Driven by Spin-State Transition in La1-xCexCoO3 Perovskites 期刊论文  OAI收割
ACS APPLIED MATERIALS & INTERFACES, 2010, 卷号: 2, 期号: 8, 页码: 2213-2217
作者:  
Wang, Yang;  Sui, Yu;  Wang, Xianjie;  Su, Wenhui;  Cao, Wenwu
  |  收藏  |  浏览/下载:18/0  |  提交时间:2021/02/02
Thermoelectric Response Driven by Spin-State Transition in La(1-x)Ce(x)CoO(3) Perovskites 期刊论文  OAI收割
Acs Applied Materials & Interfaces, 2010, 卷号: 2, 期号: 8, 页码: 2213-2217
Y. Wang; Y. Sui; X. J. Wang; W. H. Su; W. W. Cao; X. Y. Liu
收藏  |  浏览/下载:25/0  |  提交时间:2012/04/13
Nature of interfacial defects and their roles in strain relaxation at highly lattice mismatched 3C-SiC/Si (001) interface 期刊论文  OAI收割
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 106, 期号: 7
Wen, C; Wang, YM; Wan, W; Li, FH; Liang, JW; Zou, J
收藏  |  浏览/下载:42/0  |  提交时间:2013/09/24
Two-electron and one-photon transitions in highly charged nickel-like ions 期刊论文  OAI收割
CHINESE PHYSICS B, 2008, 卷号: 17, 页码: 3294-3299
作者:  
Xie Lu-You;  Dong Chen-Zhong;  Jiang Jun;  Wan Jian-Jie;  Yan Jun
  |  收藏  |  浏览/下载:14/0  |  提交时间:2018/07/16
Theoretical analysis of 980nm high power Vertical External-cavity Surface-emitting Semiconductor Laser (VECSEL) (EI CONFERENCE) 会议论文  OAI收割
ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China
作者:  
Wang L.-J.;  Wang L.-J.;  Ning Y.-Q.;  Qin L.
收藏  |  浏览/下载:23/0  |  提交时间:2013/03/25
By using bottom-emitting structure  we will develop laser diode (LD) pumped 980 nm VECSEL with active region of InGaAs/GaAsP/AlGaAs system. Because the thickness of barrier layer and absorption layer exceed that of quantum well  single well approximation model (KP method) can be used to calculate the band structure of VECSEL. The Schrodinger equation of finite deep potential well can be adopted to calculate the energy level structures of electron  heavy and light holes. According to the transition selection rule  we theoretically obtained the emitting wavelength of VECSEL and calculated quasi-Femi energy of valence band and conduction band based on the analysis of energy level structure of electron and holes. By analyzing the gain of strained quantum wells  we calculated the gain of VECSEL using transition matrix elements of electron  heavy and light holes. We give out the threshold gain  output power and other characteristic parameters. We will study the configuration of VECSEL and pumping scheme. We designed external cavity mirror  active region and bottom-emitting structure. A LD-pumped vertical external cavity surface-emitting laser whose output power is greater than 1.0 W can be predicted.  
A single charge state ECR ion source 期刊论文  OAI收割
HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION, 1999, 卷号: 23, 期号: 11, 页码: 1125-1128
作者:  
Zhao, YB;  Liu, ZW;  Zhao, HW;  Ding, JZ;  Cao, Y
  |  收藏  |  浏览/下载:18/0  |  提交时间:2011/08/26