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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
金属研究所 [1]
长春光学精密机械与物... [1]
上海光学精密机械研究... [1]
工程热物理研究所 [1]
采集方式
OAI收割 [4]
内容类型
期刊论文 [3]
会议论文 [1]
发表日期
2014 [1]
2010 [1]
2008 [1]
2005 [1]
学科主题
光学材料;晶体 [1]
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The exergy and energy level analysis of a combined cooling, heating and power system driven by a small scale gas turbine at off design condition
期刊论文
OAI收割
APPLIED THERMAL ENGINEERING, 2014, 卷号: 66, 期号: 1-2, 页码: 590-602
作者:
Chen, Qiang
;
Han, Wei
;
Zheng, Jian-jiao
;
Sui, Jun
;
Jin, Hong-guang
收藏
  |  
浏览/下载:58/0
  |  
提交时间:2015/12/10
CCHP system
Off-design performance
Energy level analysis
Exergy
Distributed energy system
Studies of the EPR parameters and defect models for three Er(3+) impurity centers in ThO(2) crystals
期刊论文
OAI收割
Spectrochimica Acta Part a-Molecular and Biomolecular Spectroscopy, 2010, 卷号: 77, 期号: 1, 页码: 276-278
W. C. Zheng
;
G. Q. Qu
;
H. G. Liu
;
W. Q. Yang
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2012/04/13
Electron paramagnetic resonance
Crystal-field theory
Defect model
Er(3+)
ThO(2)
electron-paramagnetic-resonance
energy-level analysis
superposition-model
optical-spectra
single-crystals
thorium-oxide
field
ion
systems
garnet
Bulk crystal growth and efficient diode-pumped laser performance of Yb
3+
:Sc
2
SiO
5
期刊论文
OAI收割
appl. phys. b-lasers opt., 2008, 卷号: 91, 期号: 3~4, 页码: 443, 445
Zheng L.
;
徐军
;
Zhao G.
;
Su L.
;
Wu F.
;
Liang X.
收藏
  |  
浏览/下载:666/112
  |  
提交时间:2009/09/24
Energy level diagrams
Optical spectroscopic analysis
Semi-empirical crystal-field calculations
Theoretical analysis of 980nm high power Vertical External-cavity Surface-emitting Semiconductor Laser (VECSEL) (EI CONFERENCE)
会议论文
OAI收割
ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China
作者:
Wang L.-J.
;
Wang L.-J.
;
Ning Y.-Q.
;
Qin L.
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2013/03/25
By using bottom-emitting structure
we will develop laser diode (LD) pumped 980 nm VECSEL with active region of InGaAs/GaAsP/AlGaAs system. Because the thickness of barrier layer and absorption layer exceed that of quantum well
single well approximation model (KP method) can be used to calculate the band structure of VECSEL. The Schrodinger equation of finite deep potential well can be adopted to calculate the energy level structures of electron
heavy and light holes. According to the transition selection rule
we theoretically obtained the emitting wavelength of VECSEL and calculated quasi-Femi energy of valence band and conduction band based on the analysis of energy level structure of electron and holes. By analyzing the gain of strained quantum wells
we calculated the gain of VECSEL using transition matrix elements of electron
heavy and light holes. We give out the threshold gain
output power and other characteristic parameters. We will study the configuration of VECSEL and pumping scheme. We designed external cavity mirror
active region and bottom-emitting structure. A LD-pumped vertical external cavity surface-emitting laser whose output power is greater than 1.0 W can be predicted.