机构

• 金属研究所 [1]
• 长春光学精密机械与物... [1]
• 上海光学精密机械研究... [1]
• 工程热物理研究所 [1]

采集方式

• OAI收割 [4]

内容类型

• 期刊论文 [3]
• 会议论文 [1]

发表日期

• 2014 [1]
• 2010 [1]
• 2008 [1]
• 2005 [1]

学科主题

• 光学材料;晶体 [1]

筛选

浏览/检索结果: 共4条，第1-4条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 The exergy and energy level analysis of a combined cooling, heating and power system driven by a small scale gas turbine at off design condition 期刊论文  OAI收割 APPLIED THERMAL ENGINEERING, 2014, 卷号: 66, 期号: 1-2, 页码: 590-602 作者:  Chen, Qiang;  Han, Wei;  Zheng, Jian-jiao;  Sui, Jun;  Jin, Hong-guang 收藏  |  浏览/下载：58/0  |  提交时间：2015/12/10 CCHP system  Off-design performance  Energy level analysis  Exergy  Distributed energy system   Studies of the EPR parameters and defect models for three Er(3+) impurity centers in ThO(2) crystals 期刊论文  OAI收割 Spectrochimica Acta Part a-Molecular and Biomolecular Spectroscopy, 2010, 卷号: 77, 期号: 1, 页码: 276-278 W. C. Zheng; G. Q. Qu; H. G. Liu; W. Q. Yang 收藏  |  浏览/下载：33/0  |  提交时间：2012/04/13 Electron paramagnetic resonance  Crystal-field theory  Defect model  Er(3+)  ThO(2)  electron-paramagnetic-resonance  energy-level analysis  superposition-model  optical-spectra  single-crystals  thorium-oxide  field  ion  systems  garnet   Bulk crystal growth and efficient diode-pumped laser performance of Yb 3+:Sc2SiO5 期刊论文  OAI收割 appl. phys. b-lasers opt., 2008, 卷号: 91, 期号: 3～4, 页码: 443, 445 Zheng L.; 徐军; Zhao G.; Su L.; Wu F.; Liang X. 收藏  |  浏览/下载：666/112  |  提交时间：2009/09/24 Energy level diagrams  Optical spectroscopic analysis  Semi-empirical crystal-field calculations   Theoretical analysis of 980nm high power Vertical External-cavity Surface-emitting Semiconductor Laser (VECSEL) (EI CONFERENCE) 会议论文  OAI收割 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China 作者:  Wang L.-J.;  Wang L.-J.;  Ning Y.-Q.;  Qin L. 收藏  |  浏览/下载：23/0  |  提交时间：2013/03/25 By using bottom-emitting structure  we will develop laser diode (LD) pumped 980 nm VECSEL with active region of InGaAs/GaAsP/AlGaAs system. Because the thickness of barrier layer and absorption layer exceed that of quantum well  single well approximation model (KP method) can be used to calculate the band structure of VECSEL. The Schrodinger equation of finite deep potential well can be adopted to calculate the energy level structures of electron  heavy and light holes. According to the transition selection rule  we theoretically obtained the emitting wavelength of VECSEL and calculated quasi-Femi energy of valence band and conduction band based on the analysis of energy level structure of electron and holes. By analyzing the gain of strained quantum wells  we calculated the gain of VECSEL using transition matrix elements of electron  heavy and light holes. We give out the threshold gain  output power and other characteristic parameters. We will study the configuration of VECSEL and pumping scheme. We designed external cavity mirror  active region and bottom-emitting structure. A LD-pumped vertical external cavity surface-emitting laser whose output power is greater than 1.0 W can be predicted.