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长春光学精密机械与物... [3]
西安光学精密机械研究... [3]
上海硅酸盐研究所 [2]
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期刊论文 [7]
会议论文 [4]
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A High-Performance Annularly Stacked Laser Diode Pump
会议论文
OAI收割
ELECTR NETWORK, 2020-10-12
作者:
Li, Junli
;
Sun, Lichen
;
Liu, Ming
;
Han, Yang
;
Fu, Tuanwei
  |  
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2021/04/15
high peak power
annular stack
macro channel
uniformity of centroid wavelength
High-Peak Power Passively Q-Switched 2-mu m Laser With MoS2 Saturable Absorber
期刊论文
OAI收割
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2017, 卷号: 23, 期号: 1
作者:
Luan, Chao
;
Zhang, Xiaoyan
;
Yang, Kejian
;
Zhao, Jia
;
Zhao, Shengzhi
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2017/02/27
High peak power
MoS2 saturable absorber
solid-state 2 mu m laser
High peak power, 28 ns Q-switched Tm: LuAG laser at a 2 mu m wavelength by dual-loss-modulation
期刊论文
OAI收割
LASER PHYSICS LETTERS, 2016, 卷号: 13, 期号: 2
作者:
Luan, Chao
;
Yang, Kejian
;
Zhao, Jia
;
Zhao, Shengzhi
;
Qiao, Wenchao
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2017/02/27
dual-loss-modulation
high peak power
2 mu m laser
High peak power sub-nanosecond mode-locked pulse characteristics of Nd:GGG laser
期刊论文
OAI收割
optics and laser technology, 2015, 卷号: 73, 页码: 162-165
作者:
Zhao, Jia
;
Zhao, Shengzhi
;
Li, Tao
;
Li, Yufei
;
Yang, Kejian
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2015/09/09
Nd:GGG crystal
High peak power
Sub-nanosecond pulse width
High-efficiency 2-mj 5-khz picosecond green laser generation by nd:yag innoslab amplifier
期刊论文
iSwitch采集
Ieee photonics technology letters, 2015, 卷号: 27, 期号: 14, 页码: 1531-1534
作者:
Chen, Ying
;
Li, Fang-Qin
;
Liu, Ke
;
Xu, Hong-Yan
;
Yang, Feng
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2019/05/10
Innoslab laser amplifiers
Green laser
Shg
High efficiency
High pulse energy
High peak power
Diode-Pumped Quasi-Three-Level Passively Q-Switched Nd:GGG Laser with a Codoped Nd,Cr:YAG Saturable Absorber
期刊论文
OAI收割
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 9
He, KN
;
Gao, CQ
;
Wei, ZY
;
Li, QN
;
Zhang, ZG
;
Jiang, HH
;
Yin, ST
;
Zhang, QL
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2013/09/17
ND-YAG LASER
HIGH-PEAK-POWER
946 NM
MICROCHIP LASER
GGG
CRYSTALS
OUTPUT
808nm high-power high-efficiency GaAsP/GaInP laser bars (EI CONFERENCE)
会议论文
OAI收割
Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China
作者:
Wang Y.
;
Wang L.
;
Wang L.
;
Wang L.
;
Liu Y.
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2013/03/25
808nm high power diode lasers
which is rapidly maturing technology technically and commercially since the introduction in 1999 of complete kilowatt-scale diode laser systems
have important applications in the fields of industry and pumping solid-state lasers (DPSSL). High power and high power conversion efficiency are extremely important in diode lasers
and they could lead to new applications where space
weight and electrical power are critical. High efficiency devices generate less waste heat
which means less strain on the cooling system and more tolerance to thermal conductivity variation
a lower junction temperature and longer lifetimes. Diode lasers with Al-free materials have superior power conversion efficiency compared with conventional AlGaAs/GaAs devices because of their lower differential series resistance and higher thermal conductivity. 808nm GaAsP/GalnP broad-waveguide emitting diode laser bars with 1mm cavity length have been fabricated. The peak power can reach to 100.9W at 106.5A at quasicontinuous wave operation (200s
1000Hz). The maximum power conversion efficiency is 57.38%. Based on these high power laser bars
we fabricate a 1 3 arrays
the maximum power is 64.3 W in continuous wave mode when the current is 25.0A. And the threshold current is 5.9A
the slope efficiency is 3.37 W/A. 2008 SPIE.
Optical fiber transmission of Q-switdied Nd:YAG pulses of 10MW peak power: Mechanism of damage to the fiber (EI CONFERENCE)
会议论文
OAI收割
2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies - Advanced Optical Manufacturing and Testing Technologies, November 2, 2005 - November 5, 2005, Xian, China
作者:
Wang L.
;
Zhang Y.
;
Chen W.
;
Tang Y.
;
Wang L.
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2013/03/25
This paper presents theoretical analysis and experiment results of four different fibers transmitting 10MW peak power Nd: YAG laser pulse. The main factors limiting to optical fiber transmission of high power laser pulse is pointed
including air breakdown at focus area and surface damage of optical fiber. The theory of air breakdown and the fiber coupling conditions is described briefly. The results of study to the transmission properties and damage conditions are presented on the basis of four different types of optical fibers. The results of the experiments are further analyzed in the aspects of transmitting efficiency
air breakdown and surface damage. The local and foreign optical fibers
with plastic-cladding and silica-cladding
and step- index and graded- index fibers are tested separately in the experiments. The experiments showed that the imported fibers are able to transmit up to 10MW peak power laser pulse with no any visible damage
while energy density at the fiber output end surface is 3.54GW/cm2. For local fibers
damage on the input surface of both plastic-cladding and silica-cladding
step-index fibers was found obviously. The column damage to the graded index fiber was also found and investigated in the research. Damage mechanisms of fiber at high peak power laser pulses are summarized. High quality finishing of fiber end surface will improve damage threshold tremendously. The conclusion of the study is that transmitting Q-switched Nd:YAG pulses of 10MW peak power is feasible for the domestically made fibers if their end surfaces are properly processed.
Development of high-power OPCPA laser at 1064 and 780 nm
期刊论文
OAI收割
ieee j. sel. top. quantum electron., 2006, 卷号: 12, 期号: 2, 页码: 187, 193
冷雨欣
;
梁晓燕
;
Zhao BZ
;
Wang C
;
Jiang YL
;
Yang XD
;
Lu HH
;
林礼煌
;
Zhang ZQ
;
李儒新
;
徐至展
收藏
  |  
浏览/下载:967/194
  |  
提交时间:2009/09/18
high-peak-power ultrashort-pulse laser
optical parametric chirped pulse amplification
High-power InGaAs VCSEL's single devices and 2-D arrays (EI CONFERENCE)
会议论文
OAI收割
Optoelectronic Materials and Devices for Optical Communications, November 7, 2005 - November 10, 2005, Shanghai, China
作者:
Sun Y.
;
Wang L.
;
Wang L.
;
Wang L.
;
Liu Y.
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2013/03/25
We report on bottom-emitting vertical-cavity surface-emitting lasers (VCSEL's) and laser arrays providing high output powers in the 980-nm wavelength regime. Single devices with active diameters of 500 m show high output powers of 1.95 W at room temperature. Its threshold current is 510 mA
and the maximum spatially averaged optical power density is 0.93 kW/cm2. A 16 elements array with 200m aperture size (250m center spacing) of individual elements shows a CW output power of 1.21 W at room temperature
resulting in a average optical power density of 1KW/cm2. The threshold current of the array is 1.32A and the lasing peak wavelength is 981.9 nm. The distinction of emission spectrums between the single device and the array is discussed.