中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页
机构
成果
学者
登录
注册
登陆
×
验证码:
换一张
忘记密码?
记住我
×
校外用户登录
CAS IR Grid
机构
上海药物研究所 [2]
新疆理化技术研究所 [2]
物理研究所 [1]
金属研究所 [1]
化学研究所 [1]
上海技术物理研究所 [1]
更多
采集方式
OAI收割 [8]
内容类型
期刊论文 [8]
发表日期
2013 [2]
2012 [1]
2011 [2]
2009 [2]
2007 [1]
学科主题
Endocrinol... [1]
Materials ... [1]
Physics [1]
筛选
浏览/检索结果:
共8条,第1-8条
帮助
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
题名升序
题名降序
提交时间升序
提交时间降序
作者升序
作者降序
发表日期升序
发表日期降序
Characterization of a novel curcumin analog P1 as potent inhibitor of the NF-kappa B signaling pathway with distinct mechanisms
期刊论文
OAI收割
ACTA PHARMACOLOGICA SINICA, 2013, 卷号: 34, 期号: 7, 页码: 939-950
作者:
Peng, Yan-min
;
Zheng, Jian-bin
;
Zhou, Yu-bo
;
Li, Jia
  |  
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2019/01/08
curcumin
P1
anticancer agent
high-throughput screen
NF-kappa B
HeLa cell
mitochondria
ROS
HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability
期刊论文
OAI收割
ACS NANO, 2013, 卷号: 7, 期号: 11, 页码: 10354-10361
-
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2016/05/16
HfO2
MoS2
TMD
high-kappa
ALD
band offsets
nanoelectronics
Sign reversal of the Hall resistance in the mixed-state of La1.89Ce0.11CuO4 and La1.89Ce0.11(Cu0.99Co0.01)O-4 thin films
期刊论文
OAI收割
PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, 2012, 卷号: 479, 页码: 53
Jin, K
;
Wu, BX
;
Zhu, BY
;
Zhao, BR
;
Volodin, A
;
Vanacken, J
;
Silhanek, AV
;
Moshchalkov, VV
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2013/09/24
HIGH-TEMPERATURE SUPERCONDUCTORS
HIGH-KAPPA SUPERCONDUCTORS
T-C SUPERCONDUCTORS
II SUPERCONDUCTORS
FLUCTUATION
RESISTIVITY
DEPENDENCE
Integration of Self-Assembled Redox Molecules in Flash Memory Devices
期刊论文
OAI收割
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 卷号: 58, 期号: 3, 页码: 826-834
作者:
Shaw, Jonathan
;
Zhong, Yu-Wu
;
Hughes, Kevin J.
;
Hou, Tuo-Hung
;
Raza, Hassan
  |  
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2019/04/09
Coulomb Blockade Effect
High-kappa Dielectric
Nonvolatile Memory Devices
Reduction-oxidation (Redox)-active Molecules
Self-assembled Monolayer (Sam)
Ni-Al-O diffusion barrier layer for high-kappa metal-oxide-semiconductor capacitor
期刊论文
OAI收割
THIN SOLID FILMS, 2011, 卷号: 519, 期号: 10, 页码: 3358-3362
作者:
Wu D. Q.
;
Jia R.
;
Yao J. C.
;
Zhao H. S.
;
Chang A. M.
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2013/11/07
High-kappa gate dielectrics
Leakage current density
Er(2)O(3)
Ni-Al-O
Diffusion barrier layer
Leakage current mechanisms of ultrathin high-k Er2O3 gate dielectric film
期刊论文
OAI收割
Journal of Semiconductors, 2009, 卷号: 30, 期号: 10, 页码: 21-26
作者:
Wu, Deqi
;
Yao, Jincheng
;
Zhao, Hongsheng
;
Chang, Aimin
;
Li, Feng
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2014/11/11
Er_2O_3
high-kappa gate dielectrics
leakage current
leakage current mechanisms
The oxidation behavior of Ti-46.5Al-5Nb at 900 degrees C
期刊论文
OAI收割
Intermetallics, 2007, 卷号: 15, 期号: 8, 页码: 989-998
W. Lu
;
C. L. Chen
;
Y. J. Xi
;
F. H. Wang
;
L. L. He
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2012/04/13
titanium aluminides
based on TiAl
oxidation
electron microscopy
transmission
gamma-titanium aluminides
high-temperature air
intermetallic alloys
ternary-system
tial alloys
tem
phase
microstructure
kappa-al2o3
diffraction