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	Highly polarized luminescence from an AIEE-active luminescent liquid crystalline film 期刊论文 OAI收割 ORGANIC ELECTRONICS, 2017, 卷号: 50, 页码: 177-183 作者: Sha, Junqing; Lu, Hongbo; Zhou, Mengyi; Xia, Guo; Fang, Yong \| 收藏 \| 浏览/下载：29/0 \| 提交时间：2018/08/16 Luminescent Liquid Crystal Aggregation-induced Enhanced Emission In-plane Electric Field Polarized Luminescence
	Highly polarized luminescence from an AIEE-active luminescent liquid crystalline film 期刊论文 OAI收割 ORGANIC ELECTRONICS, 2017, 卷号: 50, 页码: 177-183 作者: Sha, Junqing; Lu, Hongbo; Zhou, Mengyi; Xia, Guo; Fang, Yong \| 收藏 \| 浏览/下载：43/0 \| 提交时间：2018/08/16 Luminescent Liquid Crystal Aggregation-induced Enhanced Emission In-plane Electric Field Polarized Luminescence
	Control of N/N2 species ratio in NO plasma for p-type doping of ZnO (EI CONFERENCE) 会议论文 OAI收割作者: Chen X.; Liu L.; Liu L.; Li B.; Li B. 收藏 \| 浏览/下载：14/0 \| 提交时间：2013/03/25 Nitrogen-doped ZnO thin films were grown on c-plane sapphire (Al 2O3) substrates via plasma-assisted molecular beam epitaxy using plasma activated nitric oxide (NO) as the oxygen source and dopant. X-ray diffraction measurements indicate that a small NO flux benefits the crystal quality of the thin films. Hall effect measurements indicate that the electron density of the ZnO films decreases gradually with decreasing NO flux and the conduction reverses to p-type at a certain flux. Optical emission spectra indicate that the N atom content in the NO plasma increases with decreasing NO flux and the origin of this is discussed. X-ray photoelectron spectroscopy measurements demonstrate that the number of N atom occupied O sites in the ZnO lattice increases correspondingly. 2011 American Institute of Physics.
	Mechanism of STED microscopy and analysis of the factors affecting resolution (EI CONFERENCE) 会议论文 OAI收割 6th International Symposium on Precision Engineering Measurements and Instrumentation, August 8, 2010 - August 11, 2010, Hangzhou, China Yang P.; Ai H. 收藏 \| 浏览/下载：16/0 \| 提交时间：2013/03/25 Stimulated emission depletion (STED) microscopy exploits nonlinear saturable optical transition of fluorescent molecules allowed to overcome Abbe's diffraction-limit and provides diffraction-unlimited resolution in far-field optical microscopy. We elaborate the mechanism of STED and the conditions of depletion. The formula of STED microcopy resolution is deduced through effective point spread function (E-PSF). The STED system resolution is mainly dominated by the quality of the fluorescence depletion patterns in the focal plane. The depletion pattern is mainly affected by STED beam intensity polarization phase plate primary aberrations STED pulse shape pulse duration and delay time. In this paper we found related models and simulate the relationship between the depletion patterns and the parameters and put forward effective approach to enhance the system resolution. 2010 SPIE.
	Investigation of growth mode in ZnO thin films prepared at different temperature by plasma-molecular beam epitaxy (EI CONFERENCE) 会议论文 OAI收割 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004 Liang H. W.; Lu Y. M.; Shen D. Z.; Yan J. F.; Li B. H.; Zhang J. Y.; Liu Y. C.; Fan X. W. 收藏 \| 浏览/下载：26/0 \| 提交时间：2013/03/25 High-quality ZnO thin films on c-plane sapphire (Al2O 3) substrates were prepared by plasma-molecular beam epitaxy (P-MBE). The influence of growth temperature on growth mode of ZnO was investigated. Real-time monitored by reflection high-energy electron diffraction (RHEED) images show that below 500 C ZnO thin film was grown by three-dimension (3D) growth mode. While the two-dimension (2D) growth mode was obtained above growth temperature of 650 C. Atomic force microscopy (AFM) images present that the surface morphology of ZnO thin film with 2D growth is improved and X-ray rocking curves (XRC) indicate that the full width at half maximum (FWHM) of the ZnO (0 0 2) peak becomes narrow. From the photoluminescence (PL) spectra ultraviolet (UV) emission peak exhibits obvious blue-shift for the samples grown at lower temperature which is attributed to the effect of the quantum confinement arisen from small crystal grain sizes. The minimum carrier concentration of N=7.661016 cm-3 was obtained in the ZnO thin films with the 2D grown which is closed to that of bulk ZnO. 2005 Elsevier B.V. All rights reserved.
	Characterization of ZnO/Mg0.12Zn0.88O heterostructure grown by plasma-assisted molecular beam epitaxy (EI CONFERENCE) 会议论文 OAI收割 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004 Lu Y. M.; Wu C. X.; Wei Z. P.; Zhang Z. Z.; Zhao D. X.; Zhang J. Y.; Liu Y. C.; Shen D. Z.; Fan X. W. 收藏 \| 浏览/下载：21/0 \| 提交时间：2013/03/25 In this paper Mg0.12Zn0.88O/ZnO heterostructures were fabricated on c-plane sapphire (Al2O3) substrates by plasma-assisted molecular beam epitaxy (P-MBE). The quality of the Mg 0.12Zn0.88O alloy thin film was characterized by X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED). Optical properties of the Mg0.12Zn0.88O/ZnO heterostructure were studied by absorption and photoluminescence (PL) spectra. At room temperature (RT) Mg0.12Zn0.88O/ZnO heterostructures show two absorption edges originating from ZnO and Mg 0.12Zn0.88O layers respectively. In PL spectra two ultraviolet emission bands related to the ZnO layer and the Mg 0.12Zn0.88O layer were observed. The emission band from Mg0.12Zn0.88O layer dominates at moderately lower temperature and the luminescence of ZnO becomes gradually important with increasing temperature. This is suggested to exist as a potential barrier in the interface and to restrict the relaxation of the carriers from the Mg 0.12Zn0.88O layer to ZnO layer. As the thickness of ZnO layer decreases the emission from the Mg0.12Zn0.88O layer becomes weaker and weaker. When the ZnO thickness is up to 2 nm only the luminescence of the ZnO layer is observed at RT. The quenching of the emission corresponding to the MgZnO layer indicates the existence of a strong injection process in the samples with thinner ZnO layer. 2005 Elsevier B.V. All rights reserved.
	In-plane and out-of-plane emission of light charged particle from Ar-40+Au-197 collisions at 25 MeV/u 期刊论文 iSwitch采集 HIGH ENERGY PHYSICS & NUCLEAR PHYSICS-ENGLISH EDITION, 1996, 卷号: 20, 期号: 2, 页码: 129-134 作者: He, ZY; Li, ZY; Duan, LM; Jin, GM; Wu, HY 收藏 \| 浏览/下载：14/0 \| 提交时间：2019/10/09 reaction plane in-plane emission out-of-plane emission rotation effect impact parameter
	In-plane and out-of-plane emission of light charged particle from Ar-40+Au-197 collisions at 25 MeV/u 期刊论文 OAI收割 HIGH ENERGY PHYSICS & NUCLEAR PHYSICS-ENGLISH EDITION, 1996, 卷号: 20, 页码: 129-134 作者: He, ZY; Li, ZY; Duan, LM; Jin, GM; Wu, HY \| 收藏 \| 浏览/下载：7/0 \| 提交时间：2018/05/31 reaction plane in-plane emission out-of-plane emission rotation effect impact parameter
	In-plane and out-of-plane emission of light charged particle fromAr-40+Au-197 collisions at 25 MeV/u 期刊论文 OAI收割 HIGH ENERGY PHYSICS & NUCLEAR PHYSICS-ENGLISH EDITION, 1996, 卷号: 20, 期号: 2, 页码: 129-134 He; ZYLi; ZYDuan; LMJin; GMWu; HYDai; GXLi; ZKZhang; BGWen; WXQi \| 收藏 \| 浏览/下载：7/0 \| 提交时间：2011/08/26 Reaction Plane In-plane Emission Out-of-plane Emission Rotation