机构

• 长春光学精密机械与物... [2]
• 上海微系统与信息技术... [2]
• 金属研究所 [1]

采集方式

• OAI收割 [5]

内容类型

• 期刊论文 [3]
• 会议论文 [2]

发表日期

• 2010 [1]
• 2009 [1]
• 2007 [2]
• 2005 [1]

学科主题

• Instrument... [1]
• Materials ... [1]

筛选

浏览/检索结果: 共5条，第1-5条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序作者升序作者降序题名升序题名降序发表日期升序发表日期降序 Magnetic Properties of Spin-Ladder Compound Sr(14) (Cu(1-y)Fe(y))(24)O(41) 期刊论文  OAI收割 Chinese Physics Letters, 2010, 卷号: 27, 期号: 8 N. Hu; Z. H. Lu; L. Cheng; R. Xiong; J. Shi 收藏  |  浏览/下载：36/0  |  提交时间：2012/04/13 metal-insulator-transition  material sr14cu24o41  cuo2 chains  superconductivity  dynamics  state  gap  nmr  sr14-xcaxcu24o41  interplay   Gettering layer for oxygen accumulation in the initial stage of SIMOX processing 期刊论文  OAI收割 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2009, 卷号: 267, 期号: 8-9, 页码: 1273-1276 Ou, X; Kogler, R; Skorupa, W; Moller, W; Wang, X; Gerlach, JW 收藏  |  浏览/下载：29/0  |  提交时间：2012/03/24 LOW-DOSE SEPARATION  ON-INSULATOR MATERIAL  BURIED OXIDE  IMPLANTED SILICON  ENERGY  REGION  WAFERS   Study of the fabrication of ZnO-TFT (EI CONFERENCE) 会议论文  OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China 作者:  Wang C. 收藏  |  浏览/下载：40/0  |  提交时间：2013/03/25 Znic Oxide (ZnO) as a shorter wavelength luminescent material concerning its outstanding properties of a wide band-gap semiconductor  it can be used as the active channel layer to fabricate thin film transistor (TFT) and transparent thin film transistor(TTFT). In this paper  we introduced ZnO-TFT using different substrate material  insulator material  electrode material of gate  source and drain in its device.   The fabrication and study of ZnO-based thin film transistors (EI CONFERENCE) 会议论文  OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China 作者:  Wang C. 收藏  |  浏览/下载：44/0  |  提交时间：2013/03/25 Bottom-gate-type thin film transistors using ZnO as an active channel layer (ZnO-TF-TS) have been constructed. The ZnO layers were deposited using metal organic chemical vapor deposition (MOCVD)[1-3] at about 360C. SiO2 was used as the material of gate insulator to suppress the leakage current effectively and to enable the ZnO-TFT to operate successfully. The drain current on-to-off ratio of ZnO-TFTs fabricated on the substrate of glass is about 104. The average optical transmission of ZnO-TFTs in the visible portion is 80%. All above shows that it is possible to fabricate a transparent TFT using ZnO as an active channel layer instead of the traditional Si material.   Characterization and field-emission property of aligned porous carbon nanotube film by hydrogen-ion implantation 期刊论文  OAI收割 APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2005, 卷号: 81, 期号: 1, 页码: 169-172 Yu, WD; Zhang, JH; Wang, X; Li, XM; Gao, XD 收藏  |  浏览/下载：27/0  |  提交时间：2012/03/24 INSULATOR MATERIAL TECHNOLOGY  SILICON  DEPOSITION  GROWTH  ARRAYS