中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共6条,第1-6条 帮助

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Tensile Properties and Deformation Behavior of Several Cast Ni-Based Superalloys Fabricated by Different Solidification Ways 期刊论文  OAI收割
ACTA METALLURGICA SINICA-ENGLISH LETTERS, 2017, 卷号: 30, 期号: 3, 页码: 280-288
Li, Hai-Tao; Liang, Yong-Chun; Zhong, Wan-Li; Qin, Xue-Zhi; Guo, Jian-Ting; Zhou, Lan-Zhang; Ren, Wei-Li
收藏  |  浏览/下载:43/0  |  提交时间:2017/08/17
Atomic-Scale Insights into the Oxygen Ionic Transport Mechanisms of Oxygen Electrode in Solid Oxide Cells: A Review 期刊论文  OAI收割
PROGRESS IN CHEMISTRY, 2014, 卷号: 26, 期号: 9, 页码: 1570-1585
Liu Shaoming; Yu Bo; Zhang Wenqiang; Zhu Jianxin; Zhai Yuchun; Chen Jing
收藏  |  浏览/下载:124/0  |  提交时间:2015/03/24
Performance of an anode-supported SOFC with anode functional layers 期刊论文  OAI收割
Electrochimica Acta, 2008, 卷号: 53, 期号: 27, 页码: 7825-7830
K. F. Chen; X. J. Chen; Z. Lu; N. Ai; X. Q. Huang; W. H. Su
收藏  |  浏览/下载:24/0  |  提交时间:2012/04/13
Investigation of a Ba0.5Sr0.5Co0.8Fe0.2O3-delta based cathode SOFCII. The effect of CO2 on the chemical stability 期刊论文  OAI收割
applied catalysis b-environmental, 2007, 卷号: 76, 期号: 3-4, 页码: 320-327
作者:  
Yan, Aiyu;  Maragou, Vasiliki;  Arico, Antonino;  Cheng, Mojie;  Tsiakaras, Panagiotis
收藏  |  浏览/下载:33/0  |  提交时间:2015/11/11
Characterization of deep levels in pt-gan schottky diodes deposited on intermediate-temperature buffer layers 期刊论文  iSwitch采集
Ieee transactions on electron devices, 2002, 卷号: 49, 期号: 2, 页码: 314-318
作者:  
Leung, BH;  Chan, NH;  Fong, WK;  Zhu, CF;  Ng, SW
收藏  |  浏览/下载:38/0  |  提交时间:2019/05/12
Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers 期刊论文  OAI收割
ieee transactions on electron devices, 2002, 卷号: 49, 期号: 2, 页码: 314-318
Leung BH; Chan NH; Fong WK; Zhu CF; Ng SW; Lui HF; Tong KY; Surya C; Lu LW; Ge WK
收藏  |  浏览/下载:151/0  |  提交时间:2010/08/12