机构

• 高能物理研究所 [2]
• 半导体研究所 [2]
• 沈阳自动化研究所 [1]

采集方式

• OAI收割 [4]
• iSwitch采集 [1]

内容类型

• 期刊论文 [5]

发表日期

• 2017 [2]
• 2015 [1]
• 2006 [2]

学科主题

• 半导体物理 [1]

筛选

浏览/检索结果: 共5条，第1-5条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Characterization of down-state capacitance degradation in capacitive RF MEMS switch with rough dielectric layer 期刊论文  OAI收割 Proceedings of SPIE - The International Society for Optical Engineering, 2017, 卷号: 10244, 页码: 102441W 作者:  Lei, Qiang;  Lei Q(雷强);  Gao, Yang;  Li, Jun-Ru;  Jia, Le   |  收藏  |  浏览/下载：21/0  |  提交时间：2019/08/29 RF MEMS  capacitive switch  dielectric layer  roughness  latching  down-state capacitance  degradation   Characterization of down-state capacitance degradation in capacitive RF MEMS switch with rough dielectric layer 期刊论文  OAI收割 Proceedings of SPIE - The International Society for Optical Engineering, 2017, 卷号: 10244, 页码: 102441W 作者:  Gao, Yang;  Li, Jun-Ru;  Jia, Le;  Lei, Qiang;  Lei Q(雷强)   |  收藏  |  浏览/下载：18/0  |  提交时间：2019/08/27 RF MEMS  capacitive switch  dielectric layer  roughness  latching  down-state capacitance  degradation   Latching chains in K-nearest-neighbor and modular small-world networks 期刊论文  OAI收割 NETWORK-COMPUTATION IN NEURAL SYSTEMS, 2015, 卷号: 26, 期号: 1, 页码: 1-24 作者:  Song SM(宋三明);  Yao HX(姚鸿勋);  Simonov, Alexander Yurievich 收藏  |  浏览/下载：65/0  |  提交时间：2015/07/05 Associative retrieval  latching chain  modular structure  Potts network  sequential activity  small-world   A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor 期刊论文  iSwitch采集 Chinese physics, 2006, 卷号: 15, 期号: 10, 页码: 2422-2426 作者:  Ma Long;  Huang Ying-Long;  Zhang Yang;  Yang Fu-Hua;  Wang Liang-Chen 收藏  |  浏览/下载：27/0  |  提交时间：2019/05/12 Resonant tunnelling diode (rtd)  High electron mobility transistor (hemt)  Molecular beam epitaxy (mbe)  Bistability  Self-latching   A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor 期刊论文  OAI收割 chinese physics, 2006, 卷号: 15, 期号: 10, 页码: 2422-2426 Ma L (Ma Long); Huang YL (Huang Ying-Long); Zhang Y (Zhang Yang); Yang FH (Yang Fu-Hua); Wang LC (Wang Liang-Chen) 收藏  |  浏览/下载：31/0  |  提交时间：2010/04/11 resonant tunnelling diode (RTD)  high electron mobility transistor (HEMT)  molecular beam epitaxy (MBE)  bistability  self-latching