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CAS IR Grid
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长春光学精密机械与物... [5]
合肥物质科学研究院 [5]
国家天文台 [1]
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期刊论文 [9]
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Baseline-free direct absorption spectroscopy and its application in line intensity measurement of ammonia
期刊论文
OAI收割
OPTICS COMMUNICATIONS, 2022, 卷号: 525
作者:
Long, Jiangxiong
;
Zhang, Yujun
;
Shao, Li
;
You, Kun
;
He, Ying
  |  
收藏
  |  
浏览/下载:53/0
  |  
提交时间:2022/12/23
Direct absorption spectroscopy
Baseline-free
Line intensity
Ammonia
Electrostatic analysis and preliminary design of transmission line for the CRAFT NNBI test platform
期刊论文
OAI收割
FUSION ENGINEERING AND DESIGN, 2021, 卷号: 165
作者:
Wang, Rixin
;
Jiang, Caichao
;
Xu, Yongjian
;
Xie, Yahong
;
Xie, Yuanlai
  |  
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2021/05/06
Negative-ion based Neutral Beam Injectors
Transmission line
Finite element analyses
Electric field intensity
Equivalent distributed capacitance
NH3 aliasing absorption spectra at 1103.4 cm(-1) based on continuous quantum cascade laser
期刊论文
OAI收割
ACTA PHYSICA SINICA, 2020, 卷号: 69
作者:
Li Meng-Qi
;
Zhang Yu-Jun
;
He Ying
;
You Kun
;
Fan Bo-Qiang
  |  
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2020/11/26
laser absorption spectrum
quantum cascade laser
line intensity
concentration inversion
Population modelling of the He II energy levels in tokamak plasmas: I. Collisional excitation model
期刊论文
OAI收割
JOURNAL OF PHYSICS B-ATOMIC MOLECULAR AND OPTICAL PHYSICS, 2019, 卷号: 52, 期号: 4, 页码: 21
作者:
Lawson, K. D.
;
Aggarwal, K. M.
;
Coffey, I. H.
;
Keenan, F. P.
;
O'Mullane, M. G.
  |  
收藏
  |  
浏览/下载:118/0
  |  
提交时间:2020/03/31
He II
population modelling
tokamak plasmas
spectral line intensity ratios
Step-by-step pipeline processing approach for line segment detection
期刊论文
OAI收割
IET Image Processing, 2017, 卷号: 11, 期号: 6, 页码: 416-424
作者:
Zheng, Tianjiang
;
Chang Z(常铮)
;
Luo HB(罗海波)
;
Ding QH(丁庆海)
;
Shao CY(邵春艳)
  |  
收藏
  |  
浏览/下载:37/0
  |  
提交时间:2017/07/17
image segmentation
affine transforms
edge detection
eigenvalues and eigenfunctions
line segment detection
step-by-step pipeline processing approach
resistant to affine transformation and monotonic intensity change descriptor
RATMIC descriptor
Canny detector
Harris corner detector
regions of interest
Measurement of CO2 concentration at high-temperature based on tunable diode laser absorption spectroscopy
期刊论文
OAI收割
INFRARED PHYSICS & TECHNOLOGY, 2017, 卷号: 80, 期号: 无, 页码: 131-137
作者:
Chen, Jiuying
;
Li, Chuanrong
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2018/05/02
Tunable Diode Laser Absorption Spectroscopy
Co2 Concentration
Line Intensity
High-temperature Spectrum
The SHER-HIAF ring lattice design
会议论文
OAI收割
Shanghai, May 12, 2013 - May 17, 2013
作者:
Gao, X.
;
Yang, J.C.H.
;
Xia, J.W.
;
Chai, W.P.
;
Shi, J.
  |  
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2017/04/05
Accelerator Complex - Heavy-ion Accelerator - High Intensity - Lattice Design - Rare Isotope Beams - Secondary Nuclei - Time-of-flight Mass Spectrometers - Transport Line
Nanoscale patterns made by using a 13.5-nm Schwarzschild objective and a laser produced plasma source (EI CONFERENCE)
会议论文
OAI收割
Optical Micro- and Nanometrology IV, April 16, 2012 - April 18, 2012, Brussels, Belgium
作者:
Wang X.
;
Wang X.
;
Wang X.
;
Wang Z.
;
Wang Z.
收藏
  |  
浏览/下载:37/0
  |  
提交时间:2013/03/25
Lithium fluoride (LiF) crystal is a very promising candidate as nanometer resolution EUV and soft X-ray detector. Compared with other EUV and soft X-ray detectors
charge coupled device and photographic films
LiF crystal has high resolution
large field of view and wide dynamic range. In this paper
using LiF crystal as EUV detector and a Schwarzschild objective (SO) working at 13.5nm as projection optics
mesh images with 4.2 m
1.2 m and 800 nm line width and pinhole patterns with 1.5m diameter are acquired in projection imaging mode and direct writing mode
respectively. Fluorescence intensity profiles of images show that the resolution of mesh image is 900 nm
and the one of pinhole image is 800 nm. In the experiments
a spherical condense mirror based on normal incidence type is used to eliminate the damage and contamination on the masks (mesh and pinhole) caused by the laser plasma
and the energy density is not decreased compared with that the masks are close to the plasma. The development of the SO
the alignment of the objective and the imaging experiments are also reported. 2012 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).
Fabrication of high-efficiency ultraviolet blazed gratings by use of direct Ar2-CHF3 ion-beam etching through a rectangular photoresist mask (EI CONFERENCE)
会议论文
OAI收割
International Symposium on Photoelectronic Detection and Imaging 2011: Sensor and Micromachined Optical Device Technologies, May 24, 2011 - May 26, 2011, Beijing, China
Tan X.
收藏
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浏览/下载:25/0
  |  
提交时间:2013/03/25
In ultraviolet spectroscopy
groove irregularity and surface roughness of nanometer magnitude can cause a significant loss of diffraction efficiency. Therefore
there is a constant need to improve the diffraction efficiency. A blazed grating can concentrate most of the light intensity into a desired diffraction order
it is important to control the groove shape precisely
so it is the optimum choice among gratings of different kinds of profile. As the operating wavelength of most UV spectral applications is less than 200 nm
especially the blaze angle and the apical angle. We have presented a direct shaping method to fabricate EUV blazed gratings by using an ion-beam mixture of Ar+ and CHF2 +to etch K9 glass with a rectangular photoresist mask. With this method
the required blaze angle is small
we have succeeded in fabricating well-shaped UV blazed gratings with a 1200 line/mm groove density and 8.54 blaze angles and 1200 line/mm groove density and 11.68 blaze angles
and the metrical efficiency is about 81% and 78%. The good performance of the gratings was verified by diffraction efficiency measurements. When one uses the etching model
the conditions on the ion-beam grazing incident angle and the CHF3partial pressure should be noted. Besides
since the etched groove shape depends on the aspect ratio of the photoresist mask ridge
if we wish to fabricate larger gratings with this method
we must improve the uniformity of the photoresist mask before ion-beam etching. 2011 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).
Architecture of a silicon strip beam position monitor
期刊论文
iSwitch采集
Journal of instrumentation, 2010, 卷号: 5, 页码: 8
作者:
Angstadt, R.
;
Cooper, W.
;
Demarteau, M.
;
Green, J.
;
Jakubowski, S.
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2019/04/23
Beam-line instrumentation (beam position and profile monitors
Beam-intensity monitors
Bunch length monitors)
Analogue electronic circuits
Data acquisition circuits
Front-end electronics for detector readout