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	Electrically pumped organic laser device with a coupled microcavity structure (EI CONFERENCE) 会议论文 OAI收割 Organic Light Emitting Materials and Devices XVI, August 12, 2012 - August 15, 2012, San Diego, CA, United states 作者: Li Y.; Li Y.; Li Y.; Li Y.; Lin J. 收藏 \| 浏览/下载：22/0 \| 提交时间：2013/03/25 Lasing action in electrically pumped organic laser device is demonstrated. A DCM laser dye doped Alq film serves as the active layer. High reflective and low loss electrical contacts are used to form a high quality factor coupled microcavity. Single longitudinal cavity mode is obtained at 618 nm with a threshold current density of 612 mAcm-2 under room temperature continuous wave operation. 2012 SPIE.
	Large aperture low threshold current 980nmVCSELs fabricated with pulsed anodic oxidation (EI CONFERENCE) 会议论文 OAI收割 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China Jinjiang C.; Yongqiang N.; Te L.; Guangyu L.; Yan Z.; Biao P.; Yanfang S.; Lijun W. 收藏 \| 浏览/下载：28/0 \| 提交时间：2013/03/25 Pulsed anodic oxidation technique a new way of forming current blocking layers was successfully used in ridge-waveguide QW laser fabrication. We apply this method in 980nm VCSELs fabrication to form a high-quality native oxide current blocking layer which simplify the device process. A significant reduction of threshold current and a distinguished device performance are achieved. The 500m-diameter device has a current threshold as low as 0.48W. The maximum CW operation output power at room temperature is 1.48W. The lateral divergence angle //and vertical divergence angle are as low as 15.3 and 13.8 without side-lobes at a current of 6A.
	Design of an improved data signal timing for an amorphous silicon active-matrix organic LED display (EI CONFERENCE) 会议论文 OAI收割 ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China 作者: Zhang Z.-W. 收藏 \| 浏览/下载：18/0 \| 提交时间：2013/03/25 The most critical issue in the design of an active matrix organic light emitting diode (AM-OLED) display pixel is the pixel to the pixel luminance uniformity. By substituting four-thin film transistor (TFT) pixel circuit for two-TFT pixel circuit the luminous uniformity has great improved but it requires more components than the two-TFT pixel circuit. There are some barriers needed to resolve to utilize hydrogenated amorphous silicon transistor to lit OLED such as low field effect mobility low output current and threshold voltage shift. In this article a two-a-Si:H TFT pixel circuit was designed which consisted of one named switching TFT and the other named driving TFT. The driving TFT gate line structure modified and a data signal timing improved were reported. The modified driving TFT can provide enough current about 30 microampere to lit OLED and the novel data signal timing can provide a constant current to OLED by restraining the driving TFT threshold voltage variation. In the novel data signal timing the control signals to the driving TFT gate include a data signal and a reverse data signal. The signals alteration is performed either at a frame rate or at a line rate. By experiments the driving TFT output current value is plotted as a function of the time in different reversed voltage value. When the magnitude of the positive data signal and the negative data signal is equal the variety of Vth is smallest about 1.28V after a fixed stressing time of 1.33104min which shows the novel data signal timing can improved the driving TFT output-input current stability.
	Vertical-cavity surface-emitting lasers with periodic gain structure (EI CONFERENCE) 会议论文 OAI收割作者: Wang L.; Wang L.; Wang L.; Qin L.; Sun Y. 收藏 \| 浏览/下载：19/0 \| 提交时间：2013/03/25 The periodic gain structure is used as the active region of vertical-cavity surface-emitting lasers which can enhance the effective coupling between gain regions and internal optical field. The high device performance is achieved. The maximum continuous-wave output power of large aperture device with active diameter up to 400 m is as high as 1.41 W at room temperature. The low threshold current is only 0.5 A which is lower than that of the conventional device with three quantum wells. 2006 Elsevier B.V. All rights reserved.
	Fabrication and electron emission of carbon microtubes (EI CONFERENCE) 会议论文 OAI收割 Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005, July 10, 2005 - July 14, 2005, Oxford, United kingdom 作者: Liu L.; Liu L.; Wang W.; Wang W. 收藏 \| 浏览/下载：40/0 \| 提交时间：2013/03/25 Carbon nanotubes have been attracting attention because of their unique physical properties and their application potential for field emission cathode. Carbon nanotubes possess the following properties favorable for field emission material such as a high aspect ratio and sharp tip high chemical stability high mechanical strength stable at high temperature. Some research works on carbon nanotubes field emitter and field emission display have been reported. Here a kind of carbon microtubes and its field emission properties are introduced. They have some different properties with carbon nanotubes and the density is lower than carbon nanotubes bundles. These carbon microtubes are directly synthesized by liquidoid epitaxy method on silicon substrates at low temperature. The field emission properties of carbon microtubes are reported too. Carbon microtubes film is synthesized in liquid by electrolysis. The graphite plate is as anode and n-silicon substrate with resistivity of 4-8 cm is as cathode. The electrolysis current is about 5-8mA/cm2 and applied voltage is 800-1500V. Temperatures of the methanol base solution is maintained at 60C in process of deposition of carbon microtubes. Carbon microtubes film is observed by scanning electron microscopy(SEM) as shown in fig.1(a b). The wall's thickness of carbon microtube is about 60nm. The diameter of carbon microtube is about 0.8 m. Raman spectrum of carbon microtubes film shows the two peaks at 1342and 1560cm-1. The field emission properties of carbon microtubes are measured in high vacuum chamber(10-5Pa). The emission area of carbon microtubes is 0.5cm 0.5cm. The threshold of field emission of the carbon microtubes film is about 3.6V/ m. Field emission property of carbon microtubes film is shown in fig.2. Another when the electric field between anode and cathode is 10V/ m the electric field distribution on single carbon microtube is also given after calculation according to electric field theory. Fig 3 shows that electric field distribution vertical section on the of single carbon microtube top with 2 m of highness. These results may help us to understand field emission properties of carbon microtubes. According to research results it is found that liquidoid synthesis is simple method to produce carbon microtubes cold cathode material and the carbon microtubes have better field emission properties. 2005 IEEE.
	Low threshold current density 1.5 mu m strained-mqw laser by n-type modulation-doping 期刊论文 iSwitch采集 Pricm 5: the fifth pacific rim international conference on advanced materials and processing, pts 1-5, 2005, 卷号: 475-479, 页码: 1663-1667 作者: Zhang, RY; Wang, W; Zhou, F; Bian, J; Zhao, LJ 收藏 \| 浏览/下载：27/0 \| 提交时间：2019/05/12 1.5 mu m ingaasp/ingaasp N-type modulation-doping mqw Low threshold current density
	Low threshold current 1.3-mu m GaInNAsVCSELs grown by MOVPE 期刊论文 OAI收割 Ieee Photonics Technology Letters, 2004, 卷号: 16, 期号: 3, 页码: 717-719 A. W. Yue; K. Shen; R. F. Wang; J. Shi 收藏 \| 浏览/下载：11/0 \| 提交时间：2012/04/14 GaInNAs low threshold current vertical-cavity surface-emitting lasers (VCSELs) continuous-wave operation vertical-cavity lasers diodes
	Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots 期刊论文 OAI收割 journal of crystal growth, 2002, 卷号: 241, 期号: 3, 页码: 304-308 作者: Xu B; Li CM; Jin P; Ye XL; Li DB 收藏 \| 浏览/下载：106/0 \| 提交时间：2010/08/12 atomic force microscopy low dimensional structures nanostructures molecular beam epitaxy semiconducting III-V materials laser diodes TEMPERATURE-DEPENDENCE THRESHOLD CURRENT MU-M LASERS