机构

• 金属研究所 [2]
• 长春光学精密机械与物... [1]
• 合肥物质科学研究院 [1]

采集方式

• OAI收割 [4]

内容类型

• 期刊论文 [3]
• 会议论文 [1]

发表日期

• 2021 [1]
• 2014 [1]
• 2012 [1]
• 2007 [1]

学科主题

筛选

浏览/检索结果: 共4条，第1-4条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Modelling and application of a new method to measure the non-thermal electron current in the edge of magnetically confined plasma 期刊论文  OAI收割 NUCLEAR FUSION, 2021, 卷号: 61 作者:  Liu, S. C.;  Liang, Y.;  Zhang, H. X.;  Yan, N.;  Liao, L.   |  收藏  |  浏览/下载：79/0  |  提交时间：2021/11/15 non-thermal electron  SOL current  directional electron probe  Boris push  plasma  EAST   Wear mechanism transition dominated by subsurface recrystallization structure in Cu-Al alloys 期刊论文  OAI收割 Wear, 2014, 卷号: 320, 页码: 41-50 X. Chen; Z. Han; K. Lu 收藏  |  浏览/下载：22/0  |  提交时间：2015/01/14 Sliding wear  Non-ferrous metals  Copper  Aluminum  Thermal effects  Electron microscopy  stacking-fault energy  dynamic plastic-deformation  sliding wear  grain-boundary  si alloy  copper  behavior  aluminum  friction  metals   Correlation between wear resistance and subsurface recrystallization structure in copper 期刊论文  OAI收割 Wear, 2012, 卷号: 294, 页码: 438-445 B. Yao; Z. Han; K. Lu 收藏  |  浏览/下载：27/0  |  提交时间：2013/02/05 Sliding wear  Hardness  Non-ferrous metals  Electron microscopy  dynamic plastic-deformation  thermal-stability  microstructural  evolution  metals  alloys  cu  microhardness  friction  behavior  hardness   The spectral feature analysis of semiconductor thin disk laser (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China 作者:  Li J.;  Wang L.-J.;  Wang L.-J.;  Ning Y.-Q.;  Li J. 收藏  |  浏览/下载：23/0  |  提交时间：2013/03/25 The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of semiconductor disk laser  and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperature. We can see that: with increasing pump power  the thermal effects of the gain material becomes seriously and causes the saturation of carrier lifetime  so the electron-hole pair created in the absorbtion layer have no enough time to rate to one of the wells  and the non-radiative recombination happens in the barrier. When the thermal effects becomes stronger  the chip will not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer who is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs  This three QWs structure can add the quantum state of QW  increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etch equipment is also improved to control the surface unevenness to be within 50 nm.