机构

• 国家空间科学中心 [1]
• 长春光学精密机械与物... [1]
• 上海微系统与信息技术... [1]
• 半导体研究所 [1]

采集方式

• OAI收割 [4]

内容类型

• 会议论文 [2]
• 期刊论文 [2]

发表日期

• 2013 [1]
• 2011 [1]
• 2008 [1]
• 2006 [1]

学科主题

• 光电子学 [1]
• 空间技术 [1]

筛选

浏览/检索结果: 共4条，第1-4条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique (EI CONFERENCE) 会议论文  OAI收割 2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China 作者:  Zhang T. 收藏  |  浏览/下载：20/0  |  提交时间：2013/03/25 InP/In0.82Ga0.18As/InP heterostructure used for infrared detector were grown on (100) S-doped InP substrates using two-step growth technique by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn  TMGa  AsH3  and PH3 as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power  their temperatures were detected by a thermocouple  and the reactor pressure was kept at 10000 Pa. The growth structure of detector included In0.82Ga0.18As buffer with the thickness of 100 nm  In0.82Ga0.18As absorption layer with the thickness of 2.8 m  and the InP cap with the thickness of 0.8 m. The planar type of p-i-n detector was fabricated by Zn diffusion. The properties of In0.82Ga0.18As detector were studied  the curves of the I-V characteristics  the range of response spectrum  and the detectivity (D*) were obtained. (2013) Trans Tech Publications  Switzerland.   台面型InP/InGaAs PIN光伏探测器的p-InP低阻欧姆接触 期刊论文  OAI收割 红外与激光工程, 2011, 期号: 12 魏鹏; 朱耀明; 邓洪海; 唐恒敬; 李雪; 张永刚; 龚海梅 收藏  |  浏览/下载：31/0  |  提交时间：2012/04/13 传输线模型(TLM)  p-InP  欧姆接触  比接触电阻  AES   A New Edge-Coupled Two-Terminal Double Heterojunction Phototransistor (ECTT-DHPT) and Its DC Characteristics 会议论文  OAI收割 ieee photonicsglobal at singapore, singapore, singapore, dec 08-11, 2008 Wang, LS; Zhao, LJ; Pan, JQ; Zhang, W; Wang, H; Liang, S; Zhu, HL; Wang, W 收藏  |  浏览/下载：31/0  |  提交时间：2010/03/09 P-I-N/HBT  WAVE-GUIDE  INP/INGAAS  FREQUENCY  HBT   Structural and electrical analysis of S+ ion bombarded p-InP(100) 期刊论文  OAI收割 Applied Surface Science, 2006, 卷号: 253, 期号: 3, 页码: 1356-1364 Zhao, Q.; Zhai, G. J.; Kwok, R. W. M. 收藏  |  浏览/下载：18/0  |  提交时间：2014/04/30 InP  ion beam bombardment  sulfur passivation  XPS  LEED  passivated inp(100)-(1x1) surface  ray photoelectron-spectroscopy  (nh4)2sx-treated gaas 100  p3n5 gate insulators  sulfide passivation  sulfur passivation  electronic states  sinx/inp interface  ab-initio  inp