中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique (EI CONFERENCE) 会议论文  OAI收割
2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China
作者:  
Zhang T.
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台面型InP/InGaAs PIN光伏探测器的p-InP低阻欧姆接触 期刊论文  OAI收割
红外与激光工程, 2011, 期号: 12
魏鹏; 朱耀明; 邓洪海; 唐恒敬; 李雪; 张永刚; 龚海梅
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A New Edge-Coupled Two-Terminal Double Heterojunction Phototransistor (ECTT-DHPT) and Its DC Characteristics 会议论文  OAI收割
ieee photonicsglobal at singapore, singapore, singapore, dec 08-11, 2008
Wang, LS; Zhao, LJ; Pan, JQ; Zhang, W; Wang, H; Liang, S; Zhu, HL; Wang, W
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Structural and electrical analysis of S+ ion bombarded p-InP(100) 期刊论文  OAI收割
Applied Surface Science, 2006, 卷号: 253, 期号: 3, 页码: 1356-1364
Zhao, Q.; Zhai, G. J.; Kwok, R. W. M.
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