机构

• 长春光学精密机械与物... [2]
• 光电技术研究所 [1]
• 南京土壤研究所 [1]

采集方式

• OAI收割 [3]
• iSwitch采集 [1]

内容类型

• 期刊论文 [3]
• 会议论文 [1]

发表日期

• 2018 [1]
• 2015 [1]
• 2006 [1]
• 1998 [1]

学科主题

筛选

浏览/检索结果: 共4条，第1-4条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 The Influence of n-AlGaN Inserted Layer on the Performance of Back-Illuminated AlGaN-Based p-i-n Ultraviolet Photodetectors 期刊论文  OAI收割 Physica Status Solidi a-Applications and Materials Science, 2018, 卷号: 215, 期号: 2, 页码: 5 作者:  Chen, Y. R.;  Zhang, Z. W.;  Li, Z. M.;  Jiang, H.;  Miao, G. Q.   |  收藏  |  浏览/下载：12/0  |  提交时间：2019/09/17 AlGaN  inserted layers  p-i-n structures  ultraviolet photodetectors  suppression  diodes  Materials Science  Physics   A Dual Linearly Polarized Transmitarray Element With 1-Bit Phase Resolution in X-Band 期刊论文  OAI收割 IEEE ANTENNAS AND WIRELESS PROPAGATION LETTERS, 2015, 卷号: 14, 页码: 167-169 作者:  Pan, Wenbo;  Huang, Cheng;  Ma, Xiaoliang;  Jiang, Bo;  Luo, Xiangang 收藏  |  浏览/下载：39/0  |  提交时间：2015/07/10 Dual linear polarization  phase shifting  p-i-n diodes  tunable transmitarray   Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode (EI CONFERENCE) 会议论文  OAI收割 12th International Conference on II-VI Compounds, September 12, 2005 - September 16, 2005, Warsaw, Poland Jiao S. J.; Lu Y. M.; Shen D. Z.; Zhang Z. Z.; Li B. H.; Zhang J. Y.; Yao B.; Liu Y. C.; Fan X. W. 收藏  |  浏览/下载：26/0  |  提交时间：2013/03/25 ZnO/GaN p-i-n heterojunctions light emitting diodes were fabricated by plasma-assisted molecular beam epitaxy. We make use of high resistivity of nitrogen doped ZnO to fabricate n-ZnO/i-ZnO/p-GaN heterojunction light emitting diode. The emission of i-ZnO was obtained due to the limitation effect of i-ZnO on electrons and holes. Moreover  n-ZnO/i-MgO/p-GaN heterojunction light emitting diode was also fabricated. The limitation effect on electrons is increased in this heterojunction. The bright ultraviolet electroluminescence at 382 nm originating from the ZnO layer was observed in the room temperature electroluminescence spectrum. We hope to realize the stimulated emission of ZnO using these heterojunctions by the improvement of crystal quality and the optimization of device structure. 2006 WILEY-VCH Verlag GmbH Co. KGaA.   Effects of energy deposition by nuclear scattering in silicon p-i-n diode detectors 期刊论文  iSwitch采集 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 卷号: 135, 期号: 1-4, 页码: 523-531 作者:  Whitlow, HJ;  Roosendaal, SJ;  El Bouanani, M;  Ghetti, R;  Johnston, PN 收藏  |  浏览/下载：24/0  |  提交时间：2019/10/10 Si charged particle detectors  p-i-n diodes  radiation damage  leakage current  nuclear stopping