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	Structural amelioration of 920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL) (EI CONFERENCE) 会议论文 OAI收割 2nd International Conference on Energy, Environment and Sustainable Development, EESD 2012, October 12, 2012 - October 14, 2012, Jilin, China 作者: Liu Y.; Liu Y.; Wang L.; Wang L.; Wang L. 收藏 \| 浏览/下载：20/0 \| 提交时间：2013/03/25 920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL) has an important application in laser display. We constructed and optimized a 920 nm OPS-VECSEL with active region of In0.09Ga0.91As quantum well (QW) system pumped by 808 nm laser diode module. By the finite element method self-consistent solutions of the semiconductor electronic and optical equations are realized to calculate the characteristics parameters of OPS-VECSEL. The performances of device especially the mode the threshold and the optical-optical translation efficiency were analyzed by dealing with different number of QWs (1 2 and 3) in one period QW depth barrier width the component and dimension of the non-absorption layer. We chose an improved structure of them. On this basis we ameliorated the number of QW periods and the simulation showed that in order to obtain high performance device the choice of the number of QW periods must be cautious. (2013) Trans Tech Publications Switzerland.
	Correlated states of two-dimensional electrons in higher Landau levels 期刊论文 OAI收割 JOURNAL OF PHYSICS-CONDENSED MATTER, 2006, 卷号: 18, 期号: 49, 页码: 11255-11262 作者: Feng, Shiping; Yang, Shi-Jie; Tao, Zhi; Yu, Yue; Yang, SJ , Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China \| 收藏 \| 浏览/下载：23/0 \| 提交时间：2012/08/02 Strong Magnetic-field Charge-density-wave Double-quantum-well Ground-state Wigner Crystal Hall State Phase-diagram 2d Electrons Liquid System
	Metal-insulator transition in a quantum well under the influence of electric field 期刊论文 OAI收割 PHYSICA B-CONDENSED MATTER, 2005, 卷号: 366, 页码: 146-152 作者: Peter, AJ; Navaneethakrishnan, K \| 收藏 \| 浏览/下载：18/0 \| 提交时间：2018/05/31 metal-insulator transition quantum well system impurity state donor energy polarizability
	Theoretical analysis of 980nm high power Vertical External-cavity Surface-emitting Semiconductor Laser (VECSEL) (EI CONFERENCE) 会议论文 OAI收割 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China 作者: Wang L.-J.; Wang L.-J.; Ning Y.-Q.; Qin L. 收藏 \| 浏览/下载：23/0 \| 提交时间：2013/03/25 By using bottom-emitting structure we will develop laser diode (LD) pumped 980 nm VECSEL with active region of InGaAs/GaAsP/AlGaAs system. Because the thickness of barrier layer and absorption layer exceed that of quantum well single well approximation model (KP method) can be used to calculate the band structure of VECSEL. The Schrodinger equation of finite deep potential well can be adopted to calculate the energy level structures of electron heavy and light holes. According to the transition selection rule we theoretically obtained the emitting wavelength of VECSEL and calculated quasi-Femi energy of valence band and conduction band based on the analysis of energy level structure of electron and holes. By analyzing the gain of strained quantum wells we calculated the gain of VECSEL using transition matrix elements of electron heavy and light holes. We give out the threshold gain output power and other characteristic parameters. We will study the configuration of VECSEL and pumping scheme. We designed external cavity mirror active region and bottom-emitting structure. A LD-pumped vertical external cavity surface-emitting laser whose output power is greater than 1.0 W can be predicted.
	The energy spectral analysis of the strong-coupled superlattice 期刊论文 OAI收割 PHYSICS LETTERS A, 1999, 卷号: 260, 期号: 5, 页码: 406 Liu, B; Zhang, GC; Ding, L; Dai, JH; Zhang, HJ 收藏 \| 浏览/下载：21/0 \| 提交时间：2013/09/23 QUANTUM CHAOS MAGNETIC-FIELD LEVEL STATISTICS WELL COMPLEXITY TRANSITION BEHAVIOR SYSTEM REGIME