中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
数学与系统科学研究院 [3]
力学研究所 [1]
地质与地球物理研究所 [1]
大连化学物理研究所 [1]
采集方式
OAI收割 [6]
内容类型
期刊论文 [5]
会议论文 [1]
发表日期
2016 [1]
2015 [2]
2002 [1]
2000 [2]
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Comparison of drag prediction using RANS models and DDES for the DLR-F6 configuration using high order schemes
会议论文
OAI收割
54th AIAA Aerospace Sciences Meeting, 2016, San Diego, CA, United states, January 4, 2016 - January 8, 2016
作者:
Gan JY
;
Shen YQ(申义庆)
;
Zha GC
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2017/05/05
Central differencing
Drag prediction
Finite difference scheme
High
order scheme
Line relaxation
Mesh refinement
Trailing edges
Turbulent models
Modeling the Low Frequency Vibrational Spectroscopy of Ionic Solutions
期刊论文
OAI收割
international journal of quantum chemistry, 2015, 卷号: 115, 期号: 9, 页码: 564-569
作者:
Zhang, Ruiting
;
Pan, Zhijun
;
Zhuang, Wei
收藏
  |  
浏览/下载:39/0
  |  
提交时间:2015/11/17
ionic solution
dielectric relaxation
optical Kerr effect
molecule dynamic
projection scheme
Studies on iterative algorithms for modeling of frequency-domain wave equation based on multi-grid precondition
期刊论文
OAI收割
CHINESE JOURNAL OF GEOPHYSICS-CHINESE EDITION, 2015, 卷号: 58, 期号: 3, 页码: 1002-1012
作者:
Cao Jian
;
Chen Jing-Bo
;
Cao Shu-Hong
  |  
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2017/12/18
Multi-grid method
Relaxation factor
Local mode analysis
Average-derivative optimal scheme
On the relaxation limits of the hydrodynamic model for semiconductor devices
期刊论文
OAI收割
MATHEMATICAL MODELS & METHODS IN APPLIED SCIENCES, 2002, 卷号: 12, 期号: 3, 页码: 333-363
作者:
Qiu, YC
;
Zhang, KJ
  |  
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2018/07/30
global weak solution
trace of weak solution
relaxation limit
compensated compactness
Godunov scheme
semiconductor hydrodynamic model
The LIP+-stability and error estimates for a relaxation scheme
期刊论文
OAI收割
SIAM JOURNAL ON NUMERICAL ANALYSIS, 2000, 卷号: 38, 期号: 4, 页码: 1154-1170
作者:
Liu, HL
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收藏
  |  
浏览/下载:19/0
  |  
提交时间:2018/07/30
relaxation scheme
convex conservation laws
lip(+)-stability
maximum principle
The relaxation of the hydrodynamic model for semiconductors to the drift-diffusion equations
期刊论文
OAI收割
JOURNAL OF DIFFERENTIAL EQUATIONS, 2000, 卷号: 165, 期号: 2, 页码: 315-354
作者:
Hsiao, L
;
Zhang, KJ
  |  
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2018/07/30
hydrodynamic model
global weak solution
zero relaxation limit
traces of weak solutions
compensated compactness
Godunov scheme