机构

• 近代物理研究所 [3]
• 金属研究所 [2]
• 上海光学精密机械研究... [2]
• 苏州纳米技术与纳米仿... [1]
• 长春光学精密机械与物... [1]
• 半导体研究所 [1]
• 更多

采集方式

• OAI收割 [11]

内容类型

• 期刊论文 [8]
• 会议论文 [3]

发表日期

• 2017 [1]
• 2015 [1]
• 2011 [1]
• 2009 [2]
• 2007 [1]
• 2005 [1]
• 更多

学科主题

• 光学材料 [1]
• 光学材料;晶体 [1]
• 半导体物理 [1]

筛选

浏览/检索结果: 共11条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序作者升序作者降序 Study on spectroscopic properties and effects of tungsten ions in 2Bi(2)O(3)-3GeO(2)/SiO2 glasses 期刊论文  OAI收割 APPLIED RADIATION AND ISOTOPES, 2017, 卷号: 122, 页码: 106-110 作者:  Yu, Pingsheng;  Su, Liangbi;  Cheng, Junhua;  Zhang, Xia;  Xu, Jun 收藏  |  浏览/下载：30/0  |  提交时间：2017/05/15 2Bi(2)O(3)-3GeO(2)/SiO2  Glass  Photoluminescence   Micro-electro-mechanical systems capacitive ultrasonic transducer with a higher electromechanical coupling coefficient 期刊论文  OAI收割 Micro & Nano Letters, 2015, 卷号: 10, 期号: 10, 页码: 4 作者:  Miao, J(苗静);  Shen, WJ(沈文江);  He, CD;  Xue, CY;  Xiong, JJ 收藏  |  浏览/下载：92/0  |  提交时间：2015/12/31 silicon  elemental semiconductors  silicon-on-insulator  wafer bonding  electromechanical effects  ultrasonic transducers  capacitive transducers  micromechanical devices  micromachining  vibrations  membranes  finite element analysis  reliability  capacitance  electromechanical coupling coefficient  capacitive micromachined ultrasonic transducer  impedance matching  propagation medium  microelectromechanical system capacitive ultrasonic transducer  silicon on insulator  wafer bonding  optimum geometric dimensions  membrane mechanical vibration  electrical characteristics  finite-element analysis  operation mode  device safety  device reliability  equivalent stress  operation-collapse voltage  bottom electrodes  glass substrate surface  parallel parasitic capacitance  Si  SiO2   Three-dimensional numerical simulation of light field modulation in the vicinity of inclusions in silica subsurface 期刊论文  OAI收割 Acta Physica Sinica, 2011, 卷号: 60, 期号: 4 J. R. Hua; L. Li; X. Xiang; X. T. Zu 收藏  |  浏览/下载：26/0  |  提交时间：2012/04/13 inclusion  3D FDTD  numerical calculation  LIEF  laser-induced damage  temperature-dependence  crystalline silicon  ion-implantation  fused-silica  thin-films  sol-gel  luminescence  glass  sio2   Theoretical studies of the g factors and local structure for Cr(5+) within Cr(2)O(3) nanocrystals embedded in silica glass matrix 期刊论文  OAI收割 Journal of Alloys and Compounds, 2009, 卷号: 477, 期号: 1-2, 页码: 40-44 S. Y. Wu; L. H. Wei; H. N. Dong; Y. X. Hu; X. F. Wang 收藏  |  浏览/下载：15/0  |  提交时间：2012/04/13 Inorganic materials  Crystal and ligand fields  Point defects  Electron  paramagnetic resonance  electron-paramagnetic-resonance  atomic screening constants  photoinduced ti3+ center  chromium oxides  3d impurities  scf functions  sio2 glass  ions  semiconductors  luminescence   Raman and optical absorption spectroscopic investigation of Yb-Er codoped phosphate glasses containing SiO2 期刊论文  OAI收割 chinese optics letters, 2009, 卷号: 7, 期号: 1, 页码: 56-59 Chen YK(陈尤阔); Wen L(温磊); Hu LL(胡丽丽); Chen W(陈伟); Guyot Y; Boulon G 收藏  |  浏览/下载：2046/217  |  提交时间：2010/04/24 Yb-Er co-doped phosphate glass  SiO2  Raman spectroscopy  Judd-Ofelt parameters   The fabrication and study of ZnO-based thin film transistors (EI CONFERENCE) 会议论文  OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China 作者:  Wang C. 收藏  |  浏览/下载：31/0  |  提交时间：2013/03/25 Bottom-gate-type thin film transistors using ZnO as an active channel layer (ZnO-TF-TS) have been constructed. The ZnO layers were deposited using metal organic chemical vapor deposition (MOCVD)[1-3] at about 360C. SiO2 was used as the material of gate insulator to suppress the leakage current effectively and to enable the ZnO-TFT to operate successfully. The drain current on-to-off ratio of ZnO-TFTs fabricated on the substrate of glass is about 104. The average optical transmission of ZnO-TFTs in the visible portion is 80%. All above shows that it is possible to fabricate a transparent TFT using ZnO as an active channel layer instead of the traditional Si material.   Investigations on bismuth and aluminum co-doped germanium oxide glasses for ultra-broadband optical amplification 期刊论文  OAI收割 j. non-cryst. solids, 2005, 卷号: 351, 期号: 30-32, 页码: 2388, 2393 彭明营; Wang C; 陈丹平; 邱建荣; 姜雄伟; 朱从善 收藏  |  浏览/下载：1923/183  |  提交时间：2009/09/24 SILICA GLASS  LUMINESCENCE  STATE  TELECOMMUNICATION  EMISSION  LASER  SIO2  NMR  ND   The transition from Eu3+ to Eu2+ in SiO2(Eu) thin films prepared by ion implantation and co-sputtering 期刊论文  OAI收割 acta physica sinica, 2001, 卷号: 50, 期号: 3, 页码: 532-535 Liu FZ; Zhu MF; Liu T; Li BC 收藏  |  浏览/下载：169/50  |  提交时间：2010/08/12 SiO2(Eu) films  XANES  SPECTROSCOPY  SILICON  VALENCE  GLASS  ER3+   Defects in SiO2 glass irradiated with high energy Ar ions 会议论文  OAI收割 作者:  Zhu, ZY;  Jin, YF;  Li, CL;  Sun, YM;  Zhang, CH   |  收藏  |  浏览/下载：22/0  |  提交时间：2018/08/20 irradiation  defect  SiO2 glass   Defects in SiO2 glass irradiated with high energy Ar ions 会议论文  OAI收割 作者:  Zhu, ZY;  Jin, YF;  Li, CL;  Sun, YM;  Zhang, CH   |  收藏  |  浏览/下载：24/0  |  提交时间：2018/08/20 irradiation  defect  SiO2 glass