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Timing analysis of Swift J1658.2-4242's outburst in 2018 with Insight-HXMT, NICER and AstroSat 期刊论文 OAI收割
Journal of High Energy Astrophysics, 2019, 卷号: 24, 页码: 30-40
作者: HXMT

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Accretion accretion disks Black hole physics X-rays: binaries: Swift J1658.2-4242 Astrophysics - High Energy Astrophysical Phenomena Abstract: We present the observational results from a detailed timing analysis of the black hole candidate Swift J1658.2-4242 during its 2018 outburst with the observations of Hard X-ray Modulation Telescope (Insight-HXMT), Neutron Star Interior Composition Explorer (NICER) and AstroSat in 0.1-250 keV. The evolution of intensity, hardness and integrated fractional root mean square (rms) observed by Insight-HXMT and NICER are presented in this paper. Type-C quasi-periodic oscillations (QPOs) observed by NICER (0.8-3.5 Hz) and Insight-HXMT (1-1.6 Hz) are also reported in this work. The features of the QPOs are analyzed with an energy range of 0.5-50 keV. The relations between QPO frequency and other characteristics such as intensity, hardness and QPO rms are carefully studied. The timing and spectral properties indicate that Swift J1658.2-4242 is a black hole binary system. Besides, the rms spectra of the source calculated from the simultaneous observation of Insight-HXMT, NICER and AstroSat support the Lense-Thirring origin of the QPOs. The relation between QPO phase lag and the centroid frequency of Swift J1658.2-4242 reveals a near zero constant when < 4Hz and a soft phase lag at 6.68 Hz. This independence follows the same trend as the high inclination galactic black hole binaries such as MAXI J1659-152.

Influence of Concentration Sequence on the Signal-to-Noise Ratio of Cross Peaks of 2D Asynchronous Spectra Generated by Using the DAOSD Approach 期刊论文 OAI收割
SPECTROSCOPY AND SPECTRAL ANALYSIS, 2015, 卷号: 35, 期号: 5, 页码: 1193-1198
作者: Zhang Jin; Guo Ran; Kang Tingguo; He Anqi; Weng Shifu

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收藏 | 浏览/下载：26/0 | 提交时间：2021/02/02

SAMPLE DESIGN SCHEME 2-DIMENSIONAL SYNCHRONOUS SPECTROSCOPY PROBING INTERMOLECULAR INTERACTIONS DIPOLE-DIPOLE INTERACTIONS SOLUTION MIXTURES AOSD APPROACH COORDINATION RAMAN ACID DAOSD Infrared spectra Cross peaks intensity

Influence of Concentration Sequence on the Signal-to-Noise Ratio of Cross Peaks of 2D Asynchronous Spectra Generated by Using the DAOSD Approach 期刊论文 OAI收割
SPECTROSCOPY AND SPECTRAL ANALYSIS, 2015, 卷号: 35, 期号: 5, 页码: 1193-1198
作者: Zhang Jin; Guo Ran; Kang Tingguo; He Anqi; Weng Shifu

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收藏 | 浏览/下载：27/0 | 提交时间：2021/02/02

SAMPLE DESIGN SCHEME 2-DIMENSIONAL SYNCHRONOUS SPECTROSCOPY PROBING INTERMOLECULAR INTERACTIONS DIPOLE-DIPOLE INTERACTIONS SOLUTION MIXTURES AOSD APPROACH COORDINATION RAMAN ACID DAOSD Infrared spectra Cross peaks intensity

闪电放电过程的近红外光谱及温度沿放电通道的演化特征 期刊论文 OAI收割
地球物理学报, 2012, 卷号: 55, 期号: 8, 页码: 2508-2513
作者: 瞿海燕; 瞿海燕; 瞿海燕; 瞿海燕; 瞿海燕

收藏 | 浏览/下载：30/0 | 提交时间：2012/12/12

Lightning discharge Near-infrared spectra Channel temperature Total intensity of spectra

The coulomb potential energy effect on the intensity of the characteristic lines at highly charged ion incendence on Al surface 期刊论文 OAI收割
ACTA PHYSICA SINICA, 2008, 卷号: 57, 期号: 1, 页码: 137-142
作者: Wang Li; Zhang Xiao-An; Yang Zhi-Hu; Chen Xi-Meng; Zhang Hong-Qiang

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highly charged ion coulomb potential energy characteristic lines spectra intensity

Energy transfer between Cr³⁺ and Ni²⁺ in transparent silicate glass ceramics containing Cr³⁺/Ni²⁺ co-doped ZnAl2O4 nanocrystals 期刊论文 OAI收割
opt. express, 2008, 卷号: 16, 期号: 4, 页码: 2508, 2513
吴伯涛; 周时凤; 阮健; 乔延波; 陈丹平; 朱从善; 邱建荣

收藏 | 浏览/下载：1500/246 | 提交时间：2009/09/24

Emission intensity Silicate glass ceramics Time resolved emission spectra

Nd：YbVO4晶体的拉曼光谱和荧光光谱研究 期刊论文 OAI收割
人工晶体学报, 2008, 卷号: 37, 期号: 6, 页码: 1330, 1336
金晶; 夏海瑞; 孙尚倩; 冉栋刚; 刘凤芹; 毕文婕; 张怀金; 程艳

收藏 | 浏览/下载：1047/149 | 提交时间：2009/09/24

Nd:YbVO4晶体 Absorption peaks 极化拉曼光谱 Active vibrations 吸收光谱 Branching ratios 荧光光谱 Central wavelengths 能量传递 Emission cross sections Fluorescent spectra Group theories Intensity parameters Nd:YbVO4 crystal Polarized Raman spectra Radiative lifetimes Raman spectrums Room temperatures Scattering geometries

Temperature-enhanced ultraviolet emission in ZnO thin film (EI CONFERENCE) 会议论文 OAI收割
Zhang Y. J.; Xu C. S.; Liu Y. C.; Liu Y. X.; Wang G. R.; Fan X. W.

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We have studied the structural and optical properties of ZnO thin films prepared by thermal oxidation of ZnS films deposited by plasma assisted electron-beam evaporation on Si(1 0 0) substrates. The transformation from zinc blende ZnS to hexagonal wurtzite ZnO is confirmed by Raman and X-ray diffraction (XRD) measurement. For the sample thermally oxidized at 600 C for 2 h a novel UV emission peak Ix located at 3.22 eV (385 nm) has been observed. The temperature-dependent photoluminescence spectra show that the integrated intensity of Ix increases exponentially with increasing temperatures within the measuring temperature range from 80 to 300 K but the peak position remains nearly constant. We explain this behavior in terms of electron tunneling into the radiative recombination centers.

Fabrication of polysilicon thin film on glass with low-temperature UV-assisted crystallization (EI CONFERENCE) 会议论文 OAI收割
ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China
Huang J. Y.; Ling Z. H.; Jing H.; Fu G. Z.; Zhao Y. H.

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The amorphous silicon (a-Si) film was crystallized on glass by a simple method employed ultraviolet at temperatures as low as 400C. The employ of ultraviolet enhanced the crystallization of amorphous silicon. This method is able to uniformly crystallized large-area amorphous silicon films. The polysilicon films crystallized by this way are suitable for the fabrication of thin film transistors on ordinary glass. Crystallization process is performed in a furnace. Amorphous silicon sample is placed on a hot plate and irradiated by a bank of ultraviolet lamps through a diffuser plate to improve the uniformity of light that irradiates the sample. Raman microscopy is used for analyzing the qualities of UV-assisted crystallized silicon films. By measuring the Raman spectra the effects of anneal temperature and process time on the crystallizing behavior crystallinity and grain size of the processed films were obtained. There has a threshold temperature for crystallization of amorphous silicon film in the presence of ultraviolet irradiation with certain intensity i.e. by ultraviolet irradiation with certain intensity only when the temperature is up to the threshold temperature the crystallization can be triggered. The threshold temperature is 400C when the intensity of ultraviolet irradiation is 1mW/cm2. Above threshold temperature the increase of anneal temperature increased the rate of crystallization. Crystallinity and grain size extracted from Raman spectra of samples increase with the extending of process time at certain temperature. Crystallization of amorphous silicon film with thickness of 50nm completed within 6 hours at 400C irradiated by ultraviolet with intensity of 2mW/cm2.

Temperature dependence of carrier transfer and exciton localization in ZnO/MgZnO heterostructure (EI CONFERENCE) 会议论文 OAI收割
作者: Zhang J.; Zhang J.; Zhang J.; Li B.; Li B.

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MgZnO/ZnO heterostructure was fabricated on sapphire substrate by plasma assistant molecular beam epitaxy. The micro-photoluminescence spectra of sample are reported which shows that different emission peaks would appear when the laser beam focuses different deepness in the film. A carrier tunneling process from the MgZnO capping layer to ZnO layer was observed by the measured temperature dependence of photoluminescence spectra. This induces the emission intensity of the ZnO grew monotonically from 81 to 103 K. 2006 Elsevier B.V. All rights reserved.