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	Effect of welding parameters on GTA weld shape for pure iron plate under Ar-O-2 mixed shielding 期刊论文 OAI收割 Journal of Materials Science & Technology, 2006, 卷号: 22, 期号: 3, 页码: 359-366 S. P. Lu; H. Fujii; K. Nogi 收藏 \| 浏览/下载：29/0 \| 提交时间：2012/04/13 weld shape oxygen Marangoni convection mixed shielding gas type-304 stainless-steel surface-active elements nitrogen absorption pool development activating flux gas arc penetration metal variables
	High-power InGaAs/GaAs VCSEL's two-dimension arrays (EI CONFERENCE) 会议论文 OAI收割 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China 作者: Liu Y.; Wang L.-J. 收藏 \| 浏览/下载：26/0 \| 提交时间：2013/03/25 Selectively oxidized InGaAs/GaAs vertical -cavity surface-emitting lasers (VCSEL) array at an emission wavelength of 980nm was reported. A 16 elements array with 200m aperture size (250m center spacing) of individual elements shows a CW output power of 1.21 W at room temperature resulting in 1 KW/cm2 average optical power density. The device threshold current is 1.32A The lasing peak wavelength is 981.9 nm the full width at half-maximum is 0.7 nm and the far-field divergence angle is about 17.The characteristics of a single device with a active region diameter of 800m is compared with that of a 2-D array with active region diameter of individual clement of 200m. These two kinds of devices have the same total lasing area. At the same current injection the single device has a higher threshold and a higher output power than the array. The red shift of single device is more obvious than that of the array's.
	High-power InGaAs VCSEL's single devices and 2-D arrays (EI CONFERENCE) 会议论文 OAI收割 Optoelectronic Materials and Devices for Optical Communications, November 7, 2005 - November 10, 2005, Shanghai, China 作者: Sun Y.; Wang L.; Wang L.; Wang L.; Liu Y. 收藏 \| 浏览/下载：23/0 \| 提交时间：2013/03/25 We report on bottom-emitting vertical-cavity surface-emitting lasers (VCSEL's) and laser arrays providing high output powers in the 980-nm wavelength regime. Single devices with active diameters of 500 m show high output powers of 1.95 W at room temperature. Its threshold current is 510 mA and the maximum spatially averaged optical power density is 0.93 kW/cm2. A 16 elements array with 200m aperture size (250m center spacing) of individual elements shows a CW output power of 1.21 W at room temperature resulting in a average optical power density of 1KW/cm2. The threshold current of the array is 1.32A and the lasing peak wavelength is 981.9 nm. The distinction of emission spectrums between the single device and the array is discussed.
	Theoretical analysis of 980nm high power Vertical External-cavity Surface-emitting Semiconductor Laser (VECSEL) (EI CONFERENCE) 会议论文 OAI收割 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China 作者: Wang L.-J.; Wang L.-J.; Ning Y.-Q.; Qin L. 收藏 \| 浏览/下载：23/0 \| 提交时间：2013/03/25 By using bottom-emitting structure we will develop laser diode (LD) pumped 980 nm VECSEL with active region of InGaAs/GaAsP/AlGaAs system. Because the thickness of barrier layer and absorption layer exceed that of quantum well single well approximation model (KP method) can be used to calculate the band structure of VECSEL. The Schrodinger equation of finite deep potential well can be adopted to calculate the energy level structures of electron heavy and light holes. According to the transition selection rule we theoretically obtained the emitting wavelength of VECSEL and calculated quasi-Femi energy of valence band and conduction band based on the analysis of energy level structure of electron and holes. By analyzing the gain of strained quantum wells we calculated the gain of VECSEL using transition matrix elements of electron heavy and light holes. We give out the threshold gain output power and other characteristic parameters. We will study the configuration of VECSEL and pumping scheme. We designed external cavity mirror active region and bottom-emitting structure. A LD-pumped vertical external cavity surface-emitting laser whose output power is greater than 1.0 W can be predicted.