机构

• 新疆理化技术研究所 [2]
• 新疆生态与地理研究所 [1]

采集方式

• OAI收割 [3]

内容类型

• 期刊论文 [3]

发表日期

• 2016 [1]
• 2011 [1]
• 2010 [1]

学科主题

• Physics [1]

筛选

浏览/检索结果: 共3条，第1-3条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序作者升序作者降序 Total ionizing dose radiation effects in foue-transistor complementary metal oxide semiconductor image sensors 期刊论文  OAI收割 ACTA PHYSICA SINICA, 2016, 卷号: 65, 期号: 2 作者:  Wang, F (Wang Fan);  Li, YD (Li Yu-Dong);  Guo, Q (Guo Qi);  Wang, B (Wang Bo);  Zhang, XY (Zhang Xing-Yao) 收藏  |  浏览/下载：31/0  |  提交时间：2016/12/13 complementary metal oxide semiconductor image sensor  total ionizing dose radiation effect  pinned photodiode  full well chargecapacity   Degradation and dose rate effects of bipolar linear regulator on ionizing radiation 期刊论文  OAI收割 ACTA PHYSICA SINICA, 2011, 卷号: 60, 期号: 9, 页码: - 作者:  Wang Yi-Yuan;  Lu Wu;  Ren Di-Yuan;  Guo Qi;  Yu Xue-Feng 收藏  |  浏览/下载：26/0  |  提交时间：2012/11/29 bipolar linear regulators  total ionizing dose  dose rate effect  radiation damage   Total ionizing dose effects and annealing behavior for domestic VDMOS devices 期刊论文  OAI收割 Journal of Semiconductors, 2010, 卷号: 31, 期号: 4 Gao; Yu; Ren; Liu; Wang; Sun; Cui; Bo1; Xuefeng1; Diyuan1; Gang3; Yiyuan1; Jing1; Jiangwei1; 2; 2; 2; 2; 2; 2; 4; 4; 4 收藏  |  浏览/下载：23/0  |  提交时间：2011/08/19 Drain current - Electric breakdown - Experiments - Field effect transistors - Ionizing radiation - Irradiation - Radiation effects - Threshold voltage - Annealing behavior - Annealing time - Bias conditions - Breakdown voltage - Drain bias voltage - Electrical parameter - N-channel - On-state resistance - Preirradiation - Total dose - Total dose effect - Total ionizing dose effects - VDMOS device - VDMOS devices