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CAS IR Grid
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物理研究所 [1]
长春光学精密机械与物... [1]
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OAI收割 [2]
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会议论文 [1]
期刊论文 [1]
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2013 [1]
2004 [1]
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Fabrication of GaN-based LEDs with 22 degrees undercut sidewalls by inductively coupled plasma reactive ion etching
期刊论文
OAI收割
CHINESE PHYSICS B, 2013, 卷号: 22, 期号: 10
Wang, B
;
Su, SC
;
He, M
;
Chen, H
;
Wu, WB
;
Zhang, WW
;
Wang, Q
;
Chen, YL
;
Gao, Y
;
Zhang, L
;
Zhu, KB
;
Lei, Y
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  |  
浏览/下载:25/0
  |  
提交时间:2014/01/16
GaN
light-emitting diode (LED)
undercut
A novel method for fabrication of integrated shadow mask for patterning electrode in passive matrix OLED displays (EI CONFERENCE)
会议论文
OAI收割
6th Electronics Packaging Technology Conference, EPTC 2004, December 8, 2005 - December 10, 2005, Singapore, Singapore
Huang Z. H.
;
Su W. M.
;
Qi G. J.
;
Lu H. J.
;
Zeng X. T.
;
Wong S.
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  |  
浏览/下载:30/0
  |  
提交时间:2013/03/25
This paper reports a novel method for making an integrated shadow mask used in fabrication of passive matrix OLED displays. Common positive and negative photoresists were employed to produce retrograded strip pillars with large overhang and undercut by photolithography. The pillar strips serve as an effective shadow mask for patterning the organic layers and the metal cathodes in OLED display devices. It is expected that this method can significantly enhance the performance of passive matrix OLED at a low shadow mask fabrication cost. The method can be used for fabricating more complicated structures for other display applications. 2004 IEEE.