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	Highly Thermally Conductive and Flexible Thermal Interface Materials with Aligned Graphene Lamella Frameworks 期刊论文 OAI收割 ACS NANO, 2024, 卷号: 18, 期号: 34, 页码: 23468-23476 作者: Huang, Kun; Pei, Songfeng; Wei, Qinwei; Zhang, Qing; Guo, Jiaqi \| 收藏 \| 浏览/下载：1/0 \| 提交时间：2025/04/27 graphene vertical array thermal interfacematerials thermal conductivity scanning centrifugalcasting
	Controlled Growth of Wafer-Scale Transition Metal Dichalcogenides with a Vertical Composition Gradient for Artificial Synapses with High Linearity 期刊论文 OAI收割 ACS NANO, 2022, 卷号: 16, 期号: 8, 页码: 12318-12327 作者: Tang, Lei; Teng, Changjiu; Xu, Runzhang; Zhang, Zehao; Khan, Usman \| 收藏 \| 浏览/下载：59/0 \| 提交时间：2022/10/08 vertical composition gradient transition metal dichalcogenides chemical vapor deposition wafer-scale artificial synapses device array linearity
	Vertical-external-cavity surface-emitting lasers: Numerical simulation, and characterization (EI CONFERENCE) 会议论文 OAI收割 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China 作者: Qin L. 收藏 \| 浏览/下载：39/0 \| 提交时间：2013/03/25 Firstly the vertical external-cavity surface-emiting lasers (VECSELs) device structure and model was given and the output characteristic was simple calculated. Then in experiment the VECSELs were grown bonded on to the heat sink and optically pumped by high-power 808nm diode laser array with fiber output module the light emission spectra were measured. Finally The thermal characteristic of the VECSELs was investigated by changing the temperature of the substrate. 2008 SPIE.
	High-power InGaAs/GaAs VCSEL's two-dimension arrays (EI CONFERENCE) 会议论文 OAI收割 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China 作者: Liu Y.; Wang L.-J.; Wang L.-J.; Liu Y.; Liu Y. 收藏 \| 浏览/下载：36/0 \| 提交时间：2013/03/25 Selectively oxidized InGaAs/GaAs vertical -cavity surface-emitting lasers (VCSEL) array at an emission wavelength of 980nm was reported. A 16 elements array with 200m aperture size (250m center spacing) of individual elements shows a CW output power of 1.21 W at room temperature resulting in 1 KW/cm2 average optical power density. The device threshold current is 1.32A The lasing peak wavelength is 981.9 nm the full width at half-maximum is 0.7 nm and the far-field divergence angle is about 17.The characteristics of a single device with a active region diameter of 800m is compared with that of a 2-D array with active region diameter of individual clement of 200m. These two kinds of devices have the same total lasing area. At the same current injection the single device has a higher threshold and a higher output power than the array. The red shift of single device is more obvious than that of the array's.
	High-power InGaAs VCSEL's single devices and 2-D arrays (EI CONFERENCE) 会议论文 OAI收割 Optoelectronic Materials and Devices for Optical Communications, November 7, 2005 - November 10, 2005, Shanghai, China 作者: Sun Y.; Wang L.; Wang L.; Wang L.; Liu Y. 收藏 \| 浏览/下载：44/0 \| 提交时间：2013/03/25 We report on bottom-emitting vertical-cavity surface-emitting lasers (VCSEL's) and laser arrays providing high output powers in the 980-nm wavelength regime. Single devices with active diameters of 500 m show high output powers of 1.95 W at room temperature. Its threshold current is 510 mA and the maximum spatially averaged optical power density is 0.93 kW/cm2. A 16 elements array with 200m aperture size (250m center spacing) of individual elements shows a CW output power of 1.21 W at room temperature resulting in a average optical power density of 1KW/cm2. The threshold current of the array is 1.32A and the lasing peak wavelength is 981.9 nm. The distinction of emission spectrums between the single device and the array is discussed.