机构

• 长春光学精密机械与物... [2]
• 金属研究所 [1]
• 上海硅酸盐研究所 [1]

采集方式

• OAI收割 [4]

内容类型

• 会议论文 [2]
• 期刊论文 [2]

发表日期

• 2016 [1]
• 2010 [1]
• 2008 [1]
• 2005 [1]

学科主题

筛选

浏览/检索结果: 共4条，第1-4条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序作者升序作者降序 Tunable Ferromagnetic Transition Temperature and Vertical Hysteretic Shift in SrRuO3 Films Integrated on Si(001) 期刊论文  OAI收割 ACS APPLIED MATERIALS & INTERFACES, 2016, 卷号: 8, 期号: 22, 页码: 14012-14018 作者:  Zheng, Ming;  Wang, Wei 收藏  |  浏览/下载：26/0  |  提交时间：2017/02/27 epitaxial films  ferromagnetic transition temperature  vertical magnetization shift  lattice distortion  spintronic device   Synthesis and exchange bias effect of CoFe(2)O(4)/CoO composite ceramics 期刊论文  OAI收割 Materials Chemistry and Physics, 2010, 卷号: 124, 期号: 2-3, 页码: 1034-1038 Y. Zhang; F. Dong; Y. Liu; C. L. Fei; C. X. Pan; D. Yin; R. Xiong; J. Shin 收藏  |  浏览/下载：20/0  |  提交时间：2012/04/13 Composite materials  Magnetic materials  Chemical synthesis  Magnetometer  magnetic-properties  vertical shift  nanoparticles  anisotropy  size  bilayers  particle   Temperature characteristics of high power vertical cavity surface emitting lasers (EI CONFERENCE) 会议论文  OAI收割 Semiconductor Lasers and Applications III, November 12, 2007 - November 13, 2007, Beijing, China 作者:  Qin L. 收藏  |  浏览/下载：32/0  |  提交时间：2013/03/25 By using oxidation confinement technology high power vertical-cavity surface-emitting lasers are fabricated in experiment. The electrical and optical performance characteristics such as threshold current  efficiency  emission wavelength  and output power are measured under continuous wave (CW) condition at room temperature. The maximum output power is up to watt regime at wavelength of about 980nm. The temperature characteristics of the device are investigated experimentally in detail. The variation in lasing threshold current with temperature is studied. The characteristic temperature T0 of the device is derived  and the value is about 211K. Such a high characteristic temperature T0 of threshold current can lead to good temperature sensitivity of the device. At the same time  the lasing spectrum characteristics with temperature are also measured. The wavelength shift with temperature is just about 0.06nm/K. From the measured results  it is shown that the device can still operate at high temperature condition.   High-power InGaAs/GaAs VCSEL's two-dimension arrays (EI CONFERENCE) 会议论文  OAI收割 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China 作者:  Liu Y.;  Wang L.-J.;  Wang L.-J.;  Liu Y.;  Liu Y. 收藏  |  浏览/下载：28/0  |  提交时间：2013/03/25 Selectively oxidized InGaAs/GaAs vertical -cavity surface-emitting lasers (VCSEL) array at an emission wavelength of 980nm was reported. A 16 elements array with 200m aperture size (250m center spacing) of individual elements shows a CW output power of 1.21 W at room temperature  resulting in 1 KW/cm2 average optical power density. The device threshold current is 1.32A The lasing peak wavelength is 981.9 nm  the full width at half-maximum is 0.7 nm  and the far-field divergence angle is about 17.The characteristics of a single device with a active region diameter of 800m is compared with that of a 2-D array with active region diameter of individual clement of 200m. These two kinds of devices have the same total lasing area. At the same current injection  the single device has a higher threshold and a higher output power than the array. The red shift of single device is more obvious than that of the array's.