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	Moire-Based Absolute Interferometry With Large Measurement Range in Wafer-Mask Alignment 期刊论文 OAI收割 IEEE PHOTONICS TECHNOLOGY LETTERS, 2015, 卷号: 27, 期号: 4 作者: Di, Chengliang; Yan, Wei; Hu, Song; Yin, Didi; Ma, Chifei 收藏 \| 浏览/下载：34/0 \| 提交时间：2015/07/10 Moire fringes measurement range wafer-mask alignment lithography
	Adjustment Strategy for Inclination Moire Fringes in Lithography by Spatial Frequency Decomposition 期刊论文 OAI收割 IEEE PHOTONICS TECHNOLOGY LETTERS, 2015, 卷号: 27, 期号: 4 作者: Zhu, Jiangping; Hu, Song; Su, Xianyu; You, Zhisheng 收藏 \| 浏览/下载：22/0 \| 提交时间：2015/07/10 Proximity lithography mask-wafer alignment phase analysis spatial frequency
	Development of an experimental EUVL system (EI CONFERENCE) 会议论文 OAI收割 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies, AOMATT 2007: Design, Manufacturing, and Testing of Micro- and Nano-Optical Devices and Systems, July 8, 2007 - July 12, 2007, Chengdu, China 作者: Wang L.-P.; Zhang L.-C.; Jin C.-S. 收藏 \| 浏览/下载：18/0 \| 提交时间：2013/03/25 An experimental EUVL system has been developed to investigate EUV imaging system design component fabrication assembly technique and experimental process. The system includes a laser produced plasma (LPP) source an ellipsoidal condenser a transmission mask a reduced projection optics and vacuum system. We designed a 10:1 reduction projection optics using Schwarzschild system with spherical mirrors to achieve 0.1m resolution. The Schwarzschild optics coated with Mo/Si multilayers was assembled with wavefront error (WFE) of 0.014 waves RMS at 632.8nm wavelength under computer-aided alignment method. Using this system a fine pattern of less than 0.25m covering a 0.1mm diameter image field of view was clearly replicated on resist-coated wafer.