机构

• 半导体研究所 [12]

采集方式

• OAI收割 [12]

内容类型

• 期刊论文 [9]
• 会议论文 [3]

发表日期

• 1999 [12]

学科主题

• 半导体物理 [12]

筛选

浏览/检索结果: 共12条，第1-10条 帮助 限定条件 发表日期：1999    学科主题：半导体物理     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 InP-based optoelectronic devices for optical fiber communications 会议论文  OAI收割 1st czech-chinese workshop on advanced materials for optoelectronics (amfo 98), prague, czech republic, jun 15-17, 1998 Luo Y; Chen LH; Li TN 收藏  |  浏览/下载：8/0  |  提交时间：2010/11/15 FEEDBACK SEMICONDUCTOR-LASERS   New way to enhance the uniformity of self-organized InAs quantum dots 会议论文  OAI收割 25th international symposium on compound semiconductors, nara, japan, oct 12-16, 1998 Zhu HJ; Wang H; Wang ZM; Cui LQ; Feng SL 收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15 MOLECULAR-BEAM EPITAXY  THRESHOLD  GROWTH  LASER   AlGaInP visible quantum well lasers for information technology 期刊论文  OAI收割 czechoslovak journal of physics, 1999, 卷号: 49, 期号: 5, 页码: 791-796 Yu JZ; Chen LH; Ma XY; Wang QM 收藏  |  浏览/下载：28/0  |  提交时间：2010/08/12 HIGH-POWER OPERATION  DIODES   AlGaInP visible quantum well lasers for information technology 会议论文  OAI收割 1st czech-chinese workshop on advanced materials for optoelectronics (amfo 98), prague, czech republic, jun 15-17, 1998 Yu JZ; Chen LH; Ma XY; Wang QM 收藏  |  浏览/下载：9/0  |  提交时间：2010/11/15 HIGH-POWER OPERATION  DIODES   New way to enhance the uniformity of self-organized InAs quantum dots 期刊论文  OAI收割 compound semiconductors 1998, 1999, 期号: 162, 页码: 433-437 Zhu HJ; Wang H; Wang ZM; Cui LQ; Feng SL 收藏  |  浏览/下载：49/0  |  提交时间：2010/08/12 MOLECULAR-BEAM EPITAXY  THRESHOLD  GROWTH  LASER   High-performance 980-nm quantum-well lasers using a hybrid material system of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers grown by metal-organic chemical vapor deposition 期刊论文  OAI收割 ieee journal of quantum electronics, 1999, 卷号: 35, 期号: 10, 页码: 1535-1541 Yang GW; Hwu RJ; Xu ZT; Ma XY 收藏  |  浏览/下载：44/0  |  提交时间：2010/08/12 quantum-well lasers  semiconductor diodes  semiconductor epitaxial layers  semiconductor lasers  semiconductor materials  NM DIODE-LASERS  WAVE-GUIDE  AMPLIFIER  FRONT-FACET POWER   Influence of lateral propagating modes on laser output characteristics in selectively oxidized vertical cavity surface-emitting lasers with double oxide layers 期刊论文  OAI收割 journal of applied physics, 1999, 卷号: 86, 期号: 7, 页码: 3519-3524 Huang YZ 收藏  |  浏览/下载：30/0  |  提交时间：2010/08/12 SPONTANEOUS-EMISSION FACTOR  FABRY-PEROT MICROCAVITY  SEMICONDUCTOR-LASERS  CONFINEMENT  APERTURES  BEHAVIOR   High-speed and high-power 1.3 mu m InGaAsP/InP selective proton-bombarded buried crescent lasers with optical field attenuation regions 期刊论文  OAI收割 japanese journal of applied physics part 1-regular papers short notes & review papers, 1999, 卷号: 38, 期号: 12a, 页码: 6729-6731 Zhang BJ; Yi MB; Song JF; Gao DS; Zhu NH; Wu RH; Wang W 收藏  |  浏览/下载：46/0  |  提交时间：2010/08/12 semiconductor laser  heterostructure  proton bombardment  modulation bandwidth  MOCVD  CURRENT BLOCKING LAYERS  INNER-STRIPE LASERS   InP-based optoelectronic devices for optical fiber communications 期刊论文  OAI收割 czechoslovak journal of physics, 1999, 卷号: 49, 期号: 5, 页码: 751-756 Luo Y; Chen LH; Li TN 收藏  |  浏览/下载：32/0  |  提交时间：2010/08/12 FEEDBACK SEMICONDUCTOR-LASERS   Quantitative analysis of excitonic photoluminescence in nitrogen-doped ZnSe epilayers 期刊论文  OAI收割 journal of applied physics, 1999, 卷号: 85, 期号: 3, 页码: 1775-1779 Zhu ZM; Li GH; Liu NZ; Wang SZ; Han HX; Wang ZP 收藏  |  浏览/下载：23/0  |  提交时间：2010/08/12 P-TYPE ZNSE  MOLECULAR-BEAM EPITAXY  EXCITATION SPECTROSCOPY  LASER-DIODES  ACCEPTORS  GROWTH