机构

• 近代物理研究所 [10]
• 长春光学精密机械与物... [4]
• 工程热物理研究所 [1]

采集方式

• OAI收割 [15]

内容类型

• 会议论文 [15]

发表日期

• 2007 [15]

学科主题

筛选

浏览/检索结果: 共15条，第1-10条 帮助 限定条件 发表日期：2007    内容类型：会议论文     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 Study of the fabrication of ZnO-TFT (EI CONFERENCE) 会议论文  OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China 作者:  Wang C. 收藏  |  浏览/下载：18/0  |  提交时间：2013/03/25 Znic Oxide (ZnO) as a shorter wavelength luminescent material concerning its outstanding properties of a wide band-gap semiconductor  it can be used as the active channel layer to fabricate thin film transistor (TFT) and transparent thin film transistor(TTFT). In this paper  we introduced ZnO-TFT using different substrate material  insulator material  electrode material of gate  source and drain in its device.   The fabrication and study of ZnO-based thin film transistors (EI CONFERENCE) 会议论文  OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China 作者:  Wang C. 收藏  |  浏览/下载：14/0  |  提交时间：2013/03/25 Bottom-gate-type thin film transistors using ZnO as an active channel layer (ZnO-TF-TS) have been constructed. The ZnO layers were deposited using metal organic chemical vapor deposition (MOCVD)[1-3] at about 360C. SiO2 was used as the material of gate insulator to suppress the leakage current effectively and to enable the ZnO-TFT to operate successfully. The drain current on-to-off ratio of ZnO-TFTs fabricated on the substrate of glass is about 104. The average optical transmission of ZnO-TFTs in the visible portion is 80%. All above shows that it is possible to fabricate a transparent TFT using ZnO as an active channel layer instead of the traditional Si material.   The study of ZnO film growth and the fabrication of ZnO-based thin film transistors 会议论文  OAI收割 2007 作者:  Wang C. 收藏  |  浏览/下载：15/0  |  提交时间：2013/03/28 The study of ZnO film growth and the fabrication of ZnO-based thin film transistors (EI CONFERENCE) 会议论文  OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China 作者:  Wang C. 收藏  |  浏览/下载：17/0  |  提交时间：2013/03/25 The ZnO films were deposited on the substrate of glass by MOCVD [1-3]. The X-ray diffraction patterns of samples show sharp diffraction peaks ZnO (002) indicating the films were highly c-axis oriented. The devices based on the ZnO film were fabricated.   Internal Cooling Inside an L-Shaped Duct With Pin-Fin Turbulators Under Rotating and Non-Rotating Conditions With and Without Sand Particles 会议论文  OAI收割 ASME:Heat Transfer: General Interest, 2007 X. Shih, B. Zhu, I.-P. Shih, M. K. Chyu, R. A. Dennis, and M. A. Bryden 收藏  |  浏览/下载：6/0  |  提交时间：2011/11/28 Differential investigations of charge transfer processes in low energy ion-atom/molecule collisions 会议论文  OAI收割 作者:  Liu, H. P.;  Zhang, S. F.;  Feng, W. T.;  Xu, S. Y.;  Cao, S. P.   |  收藏  |  浏览/下载：10/0  |  提交时间：2018/08/20