中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [4]
采集方式
OAI收割 [4]
内容类型
期刊论文 [4]
发表日期
2011 [4]
学科主题
半导体物理 [4]
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发表日期:2011
学科主题:半导体物理
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Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO2(100) by metal organic chemical vapour deposition
期刊论文
OAI收割
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 24, 页码: article no.245402
Fu D
;
Zhang R
;
Liu B
;
Xie ZL
;
Xiu XQ
;
Gu SL
;
Lu H
;
Zheng YD
;
Chen YH
;
Wang ZG
收藏
  |  
浏览/下载:33/2
  |  
提交时间:2011/07/05
FUNDAMENTAL-BAND GAP
INDIUM NITRIDE
BUFFER LAYER
DEPENDENCE
SAPPHIRE
MOCVD
Positively charged manganese acceptor disclosed by photoluminescence spectra in an n-i-p-i-n heterostructure with a Mn-doped GaAs base
期刊论文
OAI收割
journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2011, 2011, 卷号: 109, 109, 期号: 9, 页码: article no.93507, Article no.93507
作者:
Shen C
;
Wang LG
;
Zheng HZ
;
Zhu H
;
Chen L
  |  
收藏
  |  
浏览/下载:43/5
  |  
提交时间:2011/07/05
GALLIUM-ARSENIDE
SEMICONDUCTORS
FIELD
Gallium-arsenide
Semiconductors
Field
Dynamics of dense spin ensemble excited in a barrier layer and detected in a well
期刊论文
OAI收割
science china-physics mechanics & astronomy, SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2011, 2011, 卷号: 54, 54, 期号: 6, 页码: 1108-1111, 1108-1111
作者:
Shen C
;
Wang LG
;
Zhu H
;
Zheng HZ
;
Zheng, HZ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. hzzheng@red.semi.ac.cn
  |  
收藏
  |  
浏览/下载:62/0
  |  
提交时间:2011/07/05
spin polarized transport
optical orientation
dense spin relaxation
quantum well
TRANSPORT
Spin Polarized Transport
Optical Orientation
Dense Spin Relaxation
Quantum Well
Transport
Stability of the positively charged manganese centre in GaAs heterostructures examined theoretically by the effective mass approximation calculation near the Gamma critical point
期刊论文
OAI收割
chinese physics b, CHINESE PHYSICS B, 2011, 2011, 卷号: 20, 20, 期号: 10, 页码: 100301, 100301
作者:
Wang, LG
;
Shen, C
;
Zheng, HZ
;
Zhu, H
;
Zhao, JH
  |  
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2012/01/06
charged acceptor centre
screening effect
exchange interaction
SHALLOW ACCEPTOR STATES
GALLIUM-ARSENIDE
SEMICONDUCTORS
FIELD
Charged Acceptor Centre
Screening Effect
Exchange Interaction
Shallow Acceptor States
Gallium-arsenide
Semiconductors
Field