机构

• 半导体研究所 [10]

采集方式

• OAI收割 [10]

内容类型

• 期刊论文 [7]
• 会议论文 [3]

发表日期

• 2011 [1]
• 2010 [1]
• 2007 [1]
• 2005 [4]
• 2004 [3]

学科主题

• 微电子学 [10]

筛选

浏览/检索结果: 共10条，第1-10条 帮助 限定条件 学科主题：微电子学     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers 期刊论文  OAI收割 acta physica sinica, 2011, 卷号: 60, 期号: 5, 页码: article no.56104 作者:  Yu F 收藏  |  浏览/下载：93/6  |  提交时间：2011/07/06 separation by oxygen implantation  buried oxide  nitrogen implantation  positive charge density  RADIATION HARDNESS  IMPLANTING NITROGEN  ION-IMPLANTATION  IMPROVEMENT  TECHNOLOGY  OXYGEN  LAYER   Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers 期刊论文  OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 10, 页码: art. no. 106106 Tang HM (Tang Hai-Ma); Zheng ZS (Zheng Zhong-Shan); Zhang EX (Zhang En-Xia); Yu F (Yu Fang); Li N (Li Ning); Wang NJ (Wang Ning-Juan) 收藏  |  浏览/下载：48/0  |  提交时间：2010/11/02 silicon-on-insulator wafers  radiation hardness  nitrogen implantation   Effect of implantation of nitrogen into SIMOX buried oxide on its fixed positive charge density 期刊论文  OAI收割 acta physica sinica, 2007, 卷号: 56, 期号: 9, 页码: 5446-5451 Zheng, ZS (Zheng Zhong-Shan); Zhang, EX (Zhang En-Xia); Liu, ZL (Liu Zhong-Li); Zhang, ZX (Zhang Zheng-Xuan); Li, N (Li Ning); Li, GH (Li Guo-Hua) 收藏  |  浏览/下载：34/0  |  提交时间：2010/03/29 SIMOX   Effect of the technology of implanting nitrogen into buried oxide on the radiation hardness of the top gate oxide for partially depleted SOIPMOSFET 期刊论文  OAI收割 chinese physics, 2005, 卷号: 14, 期号: 3, 页码: 565-570 Zheng ZS; Liu ZL; Zhang GQ; Li N; Fan K; Zhang EX; Yi WB; Chen M; Wang X 收藏  |  浏览/下载：25/0  |  提交时间：2010/03/17 SOIPMOSFET   Effects of techniques of implanting nitrogen into buried oxide on the characteristics of partially depleted SOIPMOSFET 期刊论文  OAI收割 chinese physics letters, 2005, 卷号: 22, 期号: 3, 页码: 654-656 Zheng ZS; Liu ZL; Zhang GQ; Li N; Fan K; Zhang EX; Yi WB; Chen M; Wang X 收藏  |  浏览/下载：108/0  |  提交时间：2010/03/17 SCATTERING   Effects of the technology of implanting nitrogen into buried oxide layer on the characteristics of partially depleted SOI nMOSFET 期刊论文  OAI收割 acta physica sinica, 2005, 卷号: 54, 期号: 1, 页码: 348-353 Zheng ZS; Liu ZL; Zhang GQ; Li N; Fan K; Zhang EX; Yi WB; Chen M; Wang X 收藏  |  浏览/下载：33/0  |  提交时间：2010/03/17 SOI   Improvement of the radiation hardness of SIMOX buried layers using nitrogen implantation 期刊论文  OAI收割 semiconductor science and technology, 2005, 卷号: 20, 期号: 6, 页码: 481-484 Zheng ZS; Liu ZL; Zhang GQ; Li N; Li GH; Ma HZ; Zhang EX; Zhang ZX; Wang X 收藏  |  浏览/下载：32/5  |  提交时间：2010/03/17 OXIDES   Radiation response of partially-depleted MOS transistors fabricated in the fluorinated SIMOX wafers 会议论文  OAI收割 7th international conference on solid-state and integrated circuits technology, beijing, peoples r china, oct 18-21, 2004 Li, N; Zhang, GQ; Liu, ZL; Fan, K; Zheng, ZS; Lin, Q; Zhang, ZX; Lin, CL 收藏  |  浏览/下载：127/22  |  提交时间：2010/03/29 SIMOX  fluorine  ionizing radiation   Effect of the implantation of fluorine on the mobility of channel electron for partially depleted SOI nMOSFET 会议论文  OAI收割 7th international conference on solid-state and integrated circuits technology, beijing, peoples r china, oct 18-21, 2004 Zheng, ZS; Liu, ZL; Zhang, GQ; Li, N; Fan, K 收藏  |  浏览/下载：167/30  |  提交时间：2010/03/29 Influence of fluorine on radiation-induced charge trapping in the SIMOX buried oxides 会议论文  OAI收割 7th international conference on solid-state and integrated circuits technology, beijing, peoples r china, oct 18-21, 2004 Zhang, GQ; Liu, ZL; Li, N; Zhen, ZS; Liu, GH; Lin, Q; Zhang, ZX; Lin, CL 收藏  |  浏览/下载：141/31  |  提交时间：2010/03/29 fluorine  SIMOX  charge trapping  radiation  SIO2