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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
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半导体研究所 [96]
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OAI收割 [96]
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期刊论文 [83]
会议论文 [13]
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2015 [1]
2011 [3]
2010 [3]
2009 [6]
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半导体材料 [96]
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Quantitative characterization of phase separation in the photoactive layer of polymer solar cells by the phase image of atomic force microscopy
期刊论文
OAI收割
thin solid films, 2015, 卷号: 576, 页码: 81-87
H.L. Gao
;
X.W. Zhang
;
J.H. Meng
;
Z.G. Yin
;
L.Q. Zhang
;
J.L. Wu
;
X. Liu
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2016/03/23
Single Neutral Excitons Confined in AsBr3 In Situ Etched In GaAs Quantum Rings
期刊论文
OAI收割
journal of nanoelectronics and optoelectronics, 2011, 卷号: 6, 期号: 1, 页码: 51-57
Ding F
;
Li B
;
Akopian N
;
Perinetti U
;
Chen YH
;
Peeters FM
;
Rastelli A
;
Zwiller V
;
Schmidt OG
收藏
  |  
浏览/下载:71/5
  |  
提交时间:2011/07/05
Quantum Ring
Quantum Dot
Neutral Exciton
Aharonov Bohm Effect
Gate Controlled
Selective Etching
ENERGY-SPECTRA
Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation
期刊论文
OAI收割
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 572-575
作者:
Xu B
;
Jin P
;
Ye XL
收藏
  |  
浏览/下载:63/1
  |  
提交时间:2011/07/05
Atom force microscopy
Nanostructures
Molecular-beam epitaxy
Nanomaterials
Semiconducting gallium arsenide
QUANTUM-DOTS
ANODIC ALUMINA
ARRAYS
PLACEMENT
INAS
Structures and optical characteristics of InGaN quantum dots grown by MBE
期刊论文
OAI收割
xiyou jinshu cailiao yu gongcheng/rare metal materials and engineering, 2011, 卷号: 40, 期号: 11, 页码: 2030-2032
Wang, Baozhu
;
Yan, Cuiying
;
Wang, Xiaoliang
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2012/06/14
Atomic force microscopy
Gallium nitride
Molecular beam epitaxy
Optical materials
Optical properties
Reflection high energy electron diffraction
Sapphire
Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy
期刊论文
OAI收割
journal of crystal growth, 2010, 卷号: 312, 期号: 9, 页码: 1491-1495
Zhao J (Zhao Jie)
;
Zeng YP (Zeng Yiping)
;
Liu C (Liu Chao)
;
Li YB (Li Yanbo)
收藏
  |  
浏览/下载:148/33
  |  
提交时间:2010/06/04
Reflection high-energy electron diffraction
Atomic force microscopy
Molecular beam epitaxy
Zinc compounds
Semiconducting II-VI materials
Structural and magnetic properties of GaN:Sm:Eu films fabricated by co-implantation method
期刊论文
OAI收割
materials letters, 2010, 卷号: 64, 期号: 9, 页码: 1031-1033
Sun LL (Sun Lili)
;
Liu C (Liu Chao)
;
Li JM (Li Jianming)
;
Wang JX (Wang Junxi)
;
Yan FW (Yan Fawang)
;
Zeng YP (Zeng Yiping)
;
Li JM (Li Jinmin)
收藏
  |  
浏览/下载:225/60
  |  
提交时间:2010/05/07
Magnetic materials
Semiconductors
Ion implantation
Hydride Vapor Phase Epitaxy Growth of Semipolar, 10(1)over-bar(3)over-barGaN on Patterned m-Plane Sapphire
期刊论文
OAI收割
journal of the electrochemical society, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2010, 2010, 卷号: 157, 157, 期号: 7, 页码: h721-h726, H721-H726
作者:
Wei TB (Wei T. B.)
;
Hu Q (Hu Q.)
;
Duan RF (Duan R. F.)
;
Wei XC (Wei X. C.)
;
Yang JK (Yang J. K.)
  |  
收藏
  |  
浏览/下载:292/52
  |  
提交时间:2010/06/18
atomic force microscopy
Atomic Force Microscopy
Influence of implantation energy on the characteristics of Mn-implanted nonpolar a-plane GaN films
期刊论文
OAI收割
materials letters, 2009, 卷号: 63, 期号: 3-4, 页码: 451-453
Sun LL
;
Yan FW
;
Wang JX
;
Zhang HX
;
Zeng YP
;
Wang GH
;
Li JM
收藏
  |  
浏览/下载:254/68
  |  
提交时间:2010/03/08
Diluted magnetic semiconductors (DMSs)
Implantation energy
Nonpolar a-plane GaN:Mn films
Room temperature
The structural, morphological and magnetic characteristics of Mn-implanted nonpolar a-plane GaN films
期刊论文
OAI收割
physica status solidi a-applications and materials science, 2009, 卷号: 206, 期号: 1, 页码: 91-93
Sun LL
;
Yan FW
;
Wang JX
;
Zeng YP
;
Wang GH
;
Li JM
收藏
  |  
浏览/下载:219/46
  |  
提交时间:2010/03/08
ROOM-TEMPERATURE
THIN-FILMS
(GA
MN)N
The field emission properties of nonpolar a-plane n-type GaN films grown on nano-patterned sapphire substrates
期刊论文
OAI收割
physica status solidi a-applications and materials science, 2009, 卷号: 206, 期号: 7, 页码: 1501-1503
Sun LL
;
Yan FW
;
Wang JX
;
Zhang HX
;
Zeng YP
;
Wang GH
;
Li JM
收藏
  |  
浏览/下载:55/1
  |  
提交时间:2010/03/08
ELECTRON-AFFINITY