中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页
机构
成果
学者
登录
注册
登陆
×
验证码:
换一张
忘记密码?
记住我
×
校外用户登录
CAS IR Grid
机构
长春光学精密机械与物... [6]
采集方式
OAI收割 [6]
内容类型
会议论文 [6]
发表日期
2014 [1]
2011 [1]
2010 [1]
2006 [1]
2005 [1]
1995 [1]
更多
学科主题
筛选
浏览/检索结果:
共6条,第1-6条
帮助
限定条件
内容类型:会议论文
专题:长春光学精密机械与物理研究所
第一署名单位
第一作者单位
通讯作者单位
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
提交时间升序
提交时间降序
题名升序
题名降序
作者升序
作者降序
发表日期升序
发表日期降序
The facet passivation characteristic of 940nm semiconductor laser
会议论文
OAI收割
2013 2nd International Symposium on Quantum, Nano and Micro Technologies, ISQNM 2013, December 1, 2013 - December 2, 2013, Singapore
作者:
Qu Y.
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2015/04/27
Surface modification of SiC mirror by IARE method (EI CONFERENCE)
会议论文
OAI收割
7th International Conference on Thin Film Physics and Applications, September 24, 2010 - September 27, 2010, Shanghai, China
作者:
Gao J.
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2013/03/25
A method to prepare high quality SiC coating at low temperature using large aperture E-beam evaporation PVD equipment with ion assistance was developed for the surface modification of SiC mirror for space projects. This method was called Ion Assisted Reactive Evaporation (IARE). The modified SiC coating was prepared using CH4 and Si with Kaufman ion source by IARE at 300C and it had met the requirements of applications. The SiC coating prepared by this method was amorphous. It was dense
homogeneous and easy to be polished. The surface modification of a SiC mirror was carried out using SiC coating by this method and achieved a fine surface modification effect. The surface roughness (rms) of the SiC substrate was reduced to 0.862nm
the scattering coefficient was reduced to 2.79% and the reflectance coated with Ag film was improved simultaneously after the surface modification. The effect of surface modification using SiC coating was close to that of using Si coating. It can be drawn that this technological method to preparation SiC coating for the surface modification of SiC mirror is reasonable and effective. 2011 SPIE.
The novel facet coating technology for 808nm semiconductor laser (EI CONFERENCE)
会议论文
OAI收割
2010 Academic Symposium on Optoelectronics and Microelectronics Technology and 10th Chinese-Russian Symposium on Laser Physics and Laser Technology, RCSLPLT/ASOT 2010, July 28, 2010 - August 1, 2010, Harbin, China
作者:
Liu Y.
;
Qin L.
;
Li Z.
;
Li Z.
;
Wang L.
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2013/03/25
A novel facet coating technology is presented by studying catastrophic optical mirror damage mechanism of semiconductor laser. In this technology
semiconductor laser are cleaved in the air
and the surface oxide layer is removed with a low energy ion source
flowed immediately by coating the facet with thin ZnSe layer of 20 nm. The function of this layer is to protect semiconductor laser facet
and prevent impurity particles diffusing to the facet. Finally the facet is coated with oxidative optical film. The test results show that the output power of the semiconductor laser with the ZnSe coated layer is 13% higher than that of the Si coated layer
and 47% higher than that of the oxide coated film. The device coated oxide film is damaged when current is 4.5 A
and the device coated with Si layer is damaged when current is 5.5 A
the final failed device is coated with ZnSe layer. In conclusion
the method of coating ZnSe layer on the semiconductor laser facet can prevent effectively the catastrophic optical mirror damage
and increase the output power of semiconductor lasers. 2010 IEEE.
Energy transfer processes on both Er+ ion concentration and excitation densities in Yb3+-Er3+ codoped LaF3 matrix (EI CONFERENCE)
会议论文
OAI收割
作者:
Zhang J.
;
Wang Y.
;
Wang Y.
;
Wang Y.
;
Zhang J.
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2013/03/25
The effects of both Er3+ ion concentration and excited density upon frequency upconversion fluorescence emissions in Er3+/Yb 3+-codoped LaF3 powder are investigated. The results reveal that a higher Er3+ concentration can induce not only upconversion emission enhancements but also the changes among the relative intensities of the 407
519
539 and 651 nm radiation transitions as the samples are excited within the ranges of 20 to 700 mW with 978 nm laser diode (LD) as an excitation source. The changes are described by a schematic level model with the cross-relaxation processes between Er3+ ions and a series of dynamic equations that take into account the population of temperature dependent in Er3+. 2006 Elsevier B.V. All rights reserved.
All fiber ytterbium-doped fiber grating laser (EI CONFERENCE)
会议论文
OAI收割
High-Power Lasers and Applications III, November 8, 2004 - November 11, 2004, Beijing, China
作者:
Zhang L.
;
Wang L.
;
Wang L.
;
Wang L.
;
Ning Y.-Q.
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2013/03/25
Based on requirement of all fiber structure
all fiber Yb-doped fiber grating laser uses double cladding fiber with Yb-doped as gain medium
uses fiber grating as resonance cavity and employs semiconductor laser as pumping source to realize the lasing based on the reverse of Yb ion. We use Bragg fiber grating as the resonance cavity of fiber laser and 970nm LD as pumping source
pump the Yb-doped double cladding fiber with circular inner-cladding. We realized 7.5 W single-mode laser output
central wavelength of 1080nm
FWHM of 0.11 nm under the pump power of 11.8W. Maxim conversion efficiency is 63.5 % and slope efficiency of 46.4%.
STUDY OF EUV CONTACT LITHOGRAPHY WITH A COMPACT LASER PLASMA SOURCE
会议论文
OAI收割
1995
Guo Y. B.
;
Li F. T.
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2013/03/28