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The facet passivation characteristic of 940nm semiconductor laser 会议论文  OAI收割
2013 2nd International Symposium on Quantum, Nano and Micro Technologies, ISQNM 2013, December 1, 2013 - December 2, 2013, Singapore
作者:  
Qu Y.
收藏  |  浏览/下载:17/0  |  提交时间:2015/04/27
Surface modification of SiC mirror by IARE method (EI CONFERENCE) 会议论文  OAI收割
7th International Conference on Thin Film Physics and Applications, September 24, 2010 - September 27, 2010, Shanghai, China
作者:  
Gao J.
收藏  |  浏览/下载:16/0  |  提交时间:2013/03/25
A method to prepare high quality SiC coating at low temperature using large aperture E-beam evaporation PVD equipment with ion assistance was developed for the surface modification of SiC mirror for space projects. This method was called Ion Assisted Reactive Evaporation (IARE). The modified SiC coating was prepared using CH4 and Si with Kaufman ion source by IARE at 300C and it had met the requirements of applications. The SiC coating prepared by this method was amorphous. It was dense  homogeneous and easy to be polished. The surface modification of a SiC mirror was carried out using SiC coating by this method and achieved a fine surface modification effect. The surface roughness (rms) of the SiC substrate was reduced to 0.862nm  the scattering coefficient was reduced to 2.79% and the reflectance coated with Ag film was improved simultaneously after the surface modification. The effect of surface modification using SiC coating was close to that of using Si coating. It can be drawn that this technological method to preparation SiC coating for the surface modification of SiC mirror is reasonable and effective. 2011 SPIE.  
The novel facet coating technology for 808nm semiconductor laser (EI CONFERENCE) 会议论文  OAI收割
2010 Academic Symposium on Optoelectronics and Microelectronics Technology and 10th Chinese-Russian Symposium on Laser Physics and Laser Technology, RCSLPLT/ASOT 2010, July 28, 2010 - August 1, 2010, Harbin, China
作者:  
Liu Y.;  Qin L.;  Li Z.;  Li Z.;  Wang L.
收藏  |  浏览/下载:15/0  |  提交时间:2013/03/25
A novel facet coating technology is presented by studying catastrophic optical mirror damage mechanism of semiconductor laser. In this technology  semiconductor laser are cleaved in the air  and the surface oxide layer is removed with a low energy ion source  flowed immediately by coating the facet with thin ZnSe layer of 20 nm. The function of this layer is to protect semiconductor laser facet  and prevent impurity particles diffusing to the facet. Finally the facet is coated with oxidative optical film. The test results show that the output power of the semiconductor laser with the ZnSe coated layer is 13% higher than that of the Si coated layer  and 47% higher than that of the oxide coated film. The device coated oxide film is damaged when current is 4.5 A  and the device coated with Si layer is damaged when current is 5.5 A  the final failed device is coated with ZnSe layer. In conclusion  the method of coating ZnSe layer on the semiconductor laser facet can prevent effectively the catastrophic optical mirror damage  and increase the output power of semiconductor lasers. 2010 IEEE.  
Energy transfer processes on both Er+ ion concentration and excitation densities in Yb3+-Er3+ codoped LaF3 matrix (EI CONFERENCE) 会议论文  OAI收割
作者:  
Zhang J.;  Wang Y.;  Wang Y.;  Wang Y.;  Zhang J.
收藏  |  浏览/下载:14/0  |  提交时间:2013/03/25
All fiber ytterbium-doped fiber grating laser (EI CONFERENCE) 会议论文  OAI收割
High-Power Lasers and Applications III, November 8, 2004 - November 11, 2004, Beijing, China
作者:  
Zhang L.;  Wang L.;  Wang L.;  Wang L.;  Ning Y.-Q.
收藏  |  浏览/下载:17/0  |  提交时间:2013/03/25
STUDY OF EUV CONTACT LITHOGRAPHY WITH A COMPACT LASER PLASMA SOURCE 会议论文  OAI收割
1995
Guo Y. B.; Li F. T.
收藏  |  浏览/下载:29/0  |  提交时间:2013/03/28