中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [19]
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OAI收割 [19]
内容类型
期刊论文 [14]
会议论文 [5]
发表日期
2011 [1]
2008 [1]
2007 [1]
2006 [1]
2005 [1]
2004 [3]
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学科主题
半导体材料 [19]
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Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation
期刊论文
OAI收割
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 572-575
作者:
Xu B
;
Jin P
;
Ye XL
收藏
  |  
浏览/下载:63/1
  |  
提交时间:2011/07/05
Atom force microscopy
Nanostructures
Molecular-beam epitaxy
Nanomaterials
Semiconducting gallium arsenide
QUANTUM-DOTS
ANODIC ALUMINA
ARRAYS
PLACEMENT
INAS
Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode
会议论文
OAI收割
34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007
Wang, XH
;
Wang, XL
;
Xiao, HL
;
Feng, C
;
Wang, XY
;
Wang, BZ
;
Yang, CB
;
Wang, JX
;
Wang, CM
;
Ran, JX
;
Hu, GX
;
Li, JM
收藏
  |  
浏览/下载:43/0
  |  
提交时间:2010/03/09
GAS SENSORS
HEMT STRUCTURES
MOBILITY
TEMPERATURE
TRANSISTORS
GROWTH
MOCVD
LAYER
Bioactivity of Mg-ion-implanted zirconia and titanium
期刊论文
OAI收割
applied surface science, 2007, 卷号: 253, 期号: 6, 页码: 3326-3333
Liang H
;
Wan YZ
;
He F
;
Huang Y
;
Xu JD
;
Li JM
;
Wang YL
;
Zhao ZG
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2010/03/29
bioactivity
Study on Mg memory effect in npn type AlGaN/GaN HBT structures grown by MOCVD
期刊论文
OAI收割
microelectronics journal, 2006, 卷号: 37, 期号: 7, 页码: 583-585
Ran JX
;
Wang XL
;
Hu GX
;
Wang JX
;
Li JP
;
Wang CM
;
Zeng YP
;
Li JM
收藏
  |  
浏览/下载:53/0
  |  
提交时间:2010/04/11
GaN
Mg memory effect
redistribution
AlGaN/GaN HBTs
MOCVD
CHEMICAL-VAPOR-DEPOSITION
HETEROJUNCTION BIPOLAR-TRANSISTORS
FABRICATION
Magnetron sputtering growth of InAs0.3Sb0.7 films on (100) GaAs substrates: Strong effect of growth conditions on film structure
期刊论文
OAI收割
journal of crystal growth, 2005, 卷号: 285, 期号: 4, 页码: 459-465
作者:
Yin ZG
收藏
  |  
浏览/下载:304/5
  |  
提交时间:2010/04/11
crystal structure
magnetron sputtering
semiconducting III-V materials
MOLECULAR-BEAM EPITAXY
CHEMICAL-VAPOR-DEPOSITION
INAS1-XSBX
ALLOYS
INASSB
INSB
Study of infrared luminescence from Er-implanted GaN films
会议论文
OAI收割
international conference on materials for advanced technologies, singapore, singapore, dec 07-12, 2003
Chen WD
;
Song SF
;
Zhu JJ
;
Wang XL
;
Chen CY
;
Hsu CC
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2010/11/15
doping
metalorganic chemical vapor deposition
molecular beam epitaxy
gallium compounds
semiconducting gallium compounds
ERBIUM
Formation of total-dose-radiation hardened materials by sequential oxygen and nitrogen implantation and multi-step annealing
期刊论文
OAI收割
semiconductor science and technology, 2004, 卷号: 19, 期号: 5, 页码: 571-573
Yi WB
;
Zhang EX
;
Chen M
;
Li N
;
Zhang GQ
;
Liu ZL
;
Wang X
收藏
  |  
浏览/下载:179/57
  |  
提交时间:2010/03/09
LAYERS
Growth of crack-free GaN films on Si(111) substrate by using Al-rich AlN buffer layer
期刊论文
OAI收割
journal of applied physics, 2004, 卷号: 96, 期号: 9, 页码: 4982-4988
Lu Y
;
Cong GW
;
Liu XL
;
Lu DC
;
Zhu QS
;
Wang XH
;
Wu JJ
;
Wang ZG
收藏
  |  
浏览/下载:78/29
  |  
提交时间:2010/03/09
CHEMICAL-VAPOR-DEPOSITION
High-mobility Ga-polarity GaN achieved by NH3-MBE
会议论文
OAI收割
symposium on gan and related alloys held at the 2002 mrs fall meeting, boston, ma, dec 02-06, 2002
Wang JX
;
Wang XL
;
Sun DZ
;
Li JM
;
Zeng YP
;
Hu GX
;
Liu HX
;
Lin LY
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2010/10/29
MOLECULAR-BEAM EPITAXY
ION-SCATTERING SPECTROSCOPY
LATTICE POLARITY
SINGLE-CRYSTALS
FILMS
POLARIZATION
GAN(0001)
SURFACES
GROWTH
DIODES
Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si(111)
期刊论文
OAI收割
journal of crystal growth, 2003, 卷号: 258, 期号: 1-2, 页码: 34-40
作者:
Zhao DG
收藏
  |  
浏览/下载:299/12
  |  
提交时间:2010/08/12
metalorganic chemical vapor deposition
nitrides
semiconductor III-V materials
MOLECULAR-BEAM EPITAXY
HIGH-QUALITY GAN
CHEMICAL-VAPOR-DEPOSITION
INTERMEDIATE LAYER
ALAS
ALN
SURFACES
SILICON
FILMS