中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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  • 1999 [70]
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Temperature regulating laser diode assembly 专利  OAI收割
专利号: EP0823142B1, 申请日期: 1999-11-03, 公开日期: 1999-11-03
作者:  
FREYMAN, CHRISTOPHER, A.;  DIDOMIZIO, RICHARD, A.;  ROBB, JAMES, A.
  |  收藏  |  浏览/下载:9/0  |  提交时间:2019/12/24
Two-dimensional ordering of self-assembled inxgal-xas quantum dots grown on gaas(311)b surfaces 期刊论文  iSwitch采集
Journal of crystal growth, 1999, 卷号: 206, 期号: 4, 页码: 279-286
作者:  
Xu, HZ;  Jiang, WH;  Xu, B;  Zhou, W;  Wang, ZG
收藏  |  浏览/下载:31/0  |  提交时间:2019/05/12
Indium composition dependence of the size uniformity of ingaas quantum dots on (311)b gaas grown by molecular beam epitaxy 期刊论文  iSwitch采集
Journal of materials science & technology, 1999, 卷号: 15, 期号: 6, 页码: 523-526
作者:  
Jiang, WH;  Xu, HZ;  Xu, B;  Zhou, W;  Gong, Q
收藏  |  浏览/下载:18/0  |  提交时间:2019/05/12
Effect of si overgrowth on the structural and luminescence properties of ge islands on si(100) 期刊论文  iSwitch采集
Journal of crystal growth, 1999, 卷号: 207, 期号: 1-2, 页码: 150-153
作者:  
Liu, JP;  Wang, JZ;  Huang, DD;  Li, JP;  Sun, DZ
收藏  |  浏览/下载:9/0  |  提交时间:2019/05/12
Alignment determination of symmetric top molecule using rotationally resolved LIF 期刊论文  OAI收割
chemical physics, 1999, 卷号: 249, 期号: 2-3, 页码: 183-190
作者:  
Cong, SL;  Han, KL;  Lou, NQ
收藏  |  浏览/下载:23/0  |  提交时间:2010/11/30
Effect of Si overgrowth on the structural and luminescence properties of Ge islands on Si(100) 期刊论文  OAI收割
JOURNAL OF CRYSTAL GROWTH, 1999, 卷号: 207, 期号: 1-2, 页码: 150-153
作者:  
Liu, JP;  Wang, JZ;  Huang, DD;  Li, JP;  Sun, DZ
  |  收藏  |  浏览/下载:5/0  |  提交时间:2021/02/02
Micromirror for a hybrid optoelectronic integrated circuit, a method for manufacturing the same, a micromirror-photodetector assembly and an assembly of hybrid optoelectronic integrated circuit for receiving light 专利  OAI收割
专利号: US5972232, 申请日期: 1999-10-26, 公开日期: 1999-10-26
作者:  
LEE, SANG HWAN;  HWANG, NAM;  SONG, MIN KYU;  LEE, HEE TAE;  PYUN, KWANG EUI
  |  收藏  |  浏览/下载:9/0  |  提交时间:2019/12/24
VCSEL with integrated photodetectors for automatic power control and signal detection in data storage 专利  OAI收割
专利号: US5974071, 申请日期: 1999-10-26, 公开日期: 1999-10-26
作者:  
JIANG, WENBIN;  LEBBY, MICHAEL S.
  |  收藏  |  浏览/下载:5/0  |  提交时间:2019/12/24
Two-dimensional ordering of self-assembled inxga1-xas quantum dots grown on gaas(311)b surfaces 期刊论文  iSwitch采集
Journal of crystal growth, 1999, 卷号: 205, 期号: 4, 页码: 481-488
作者:  
Xu, HZ;  Jiang, WH;  Xu, B;  Zhou, W;  Wang, ZG
收藏  |  浏览/下载:26/0  |  提交时间:2019/05/12
Fabrication of ingaas quantum dots with an underlying ingaalas layer on gaas(100) and high index substrates by molecular beam epitaxy 期刊论文  iSwitch采集
Journal of crystal growth, 1999, 卷号: 205, 期号: 4, 页码: 607-612
作者:  
Jiang, WH;  Xu, HZ;  Xu, B;  Wu, J;  Ye, XL
收藏  |  浏览/下载:21/0  |  提交时间:2019/05/12