机构

• 半导体研究所 [9]

采集方式

• OAI收割 [9]

内容类型

• 期刊论文 [9]

发表日期

• 2009 [1]
• 2006 [1]
• 2002 [2]
• 2001 [1]
• 2000 [1]
• 1998 [2]
• 更多

学科主题

• 半导体物理 [9]

筛选

浏览/检索结果: 共9条，第1-9条 帮助 限定条件 学科主题：半导体物理     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 GaAs Based InAs/GaSb Superlattice Short Wavelength Infrared Detectors Grown by Molecular Beam Epitaxy 期刊论文  OAI收割 chinese physics letters, 2009, 卷号: 26, 期号: 2, 页码: art. no. 028102 作者:  Tang B;  Wang GW;  Xu YQ 收藏  |  浏览/下载：159/45  |  提交时间：2010/03/08 INAS/GA1-XINXSB SUPERLATTICE  GASB  HETEROJUNCTIONS  PHOTODIODES  SEGREGATION  LAYERS  INAS  ALSB   Magnetic properties of tin-doped magnetite nanoparticles 期刊论文  OAI收割 physics letters a, 2006, 卷号: 359, 期号: 1, 页码: 66-69 Lu YW (Lu Yan-Wu); Zhu QS (Zhu Qin-Sheng); Liu FX (Liu Fang-Xin) 收藏  |  浏览/下载：26/0  |  提交时间：2010/04/11 tin-doped magnetite  composition and particle-size effect  paramagnetic properties  TITANOMAGNETITES FE3-XTIXO4  IRON  TRANSITION  ANISOTROPY  OXIDES   Interface-related in-plane optical anisotropy in GaAs/AlxGa1-xAs single-quantum-well structures studied by reflectance difference spectroscopy 期刊论文  OAI收割 physical review b, 2002, 卷号: 66, 期号: 19, 页码: art.no.195321 作者:  Ye XL 收藏  |  浏览/下载：64/0  |  提交时间：2010/08/12 MOLECULAR-BEAM EPITAXY  EXCITON LOCALIZATION  INVERSION ASYMMETRY  COMMON-ATOM  LIGHT-HOLE  HETEROSTRUCTURES  SUPERLATTICES  POLARIZATION  SEGREGATION  MORPHOLOGY   Photoluminescence properties of Eu3+-doped ZnS nanocrystals prepared in a water/methanol solution 期刊论文  OAI收割 applied physics letters, 2002, 卷号: 80, 期号: 19, 页码: 3605-3607 Qu SC; Zhou WH; Liu FQ; Chen NF; Wang ZG; Pan HY; Yu DP 收藏  |  浏览/下载：91/9  |  提交时间：2010/08/12 SEMICONDUCTOR CLUSTERS  DOPED NANOCRYSTALS  OPTICAL-PROPERTIES  POLYMER MATRIX  MN  ELECTROLUMINESCENCE  LUMINESCENCE   Comparison of field effect transistor characteristics between space-grown and earth-grown gallium arsenide single crystal substrates 期刊论文  OAI收割 applied physics letters, 2001, 卷号: 78, 期号: 4, 页码: 478-479 Chen NF; Zhong XR; Lin LY; Zhang M; Wang YS; Bai XW; Zhao J 收藏  |  浏览/下载：41/0  |  提交时间：2010/08/12 FLOATING-ZONE GROWTH  ZERO GRAVITY  MICROGRAVITY  STOICHIOMETRY  SEGREGATION  SILICON  GE   Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy 期刊论文  OAI收割 physica e, 2000, 卷号: 8, 期号: 2, 页码: 134-140 作者:  Ye XL;  Xu B 收藏  |  浏览/下载：52/0  |  提交时间：2010/08/12 quantum dots  high index  molecular beam epitaxy  photoluminescence  SURFACE SEGREGATION  ORIENTED GAAS  INGAAS  ISLANDS  WELLS  DISKS   Characterization of strain relaxation in As ion implanted Si1-xGex epilayers grown by gas source molecular beam epitaxy 期刊论文  OAI收割 applied physics letters, 1998, 卷号: 72, 期号: 7, 页码: 845-847 Zou LF; Wang ZG; Sun DZ; Fan TW; Liu XF; Zhang JW 收藏  |  浏览/下载：50/0  |  提交时间：2010/08/12 HETEROSTRUCTURES  PRECIPITATION  ALLOYS   Relationship between deep-level centers and stoichiometry in semi-insulating gallium arsenide 期刊论文  OAI收割 journal of applied physics, 1998, 卷号: 84, 期号: 10, 页码: 5826-5827 Lin LY; Chen NF; Zhong XR; He HJ; Li CJ 收藏  |  浏览/下载：36/0  |  提交时间：2010/08/12 SEMIINSULATING GAAS  LEC-GAAS  DEFECTS  SEGREGATION  CARBON  BORON   RBS STUDIES OF THE LATTICE DAMAGE CAUSED BY 1 MEV SI+ IMPLANTATION INTO AL0.3GA0.7AS/GAAS SUPERLATTICES AT ELEVATED-TEMPERATURE 期刊论文  OAI收割 nuclear instruments & methods in physics research section b-beam interactions with materials and atoms, 1994, 卷号: 90, 期号: 0, 页码: 392-395 XU TB; ZHU PR; ZHOU JS; LI DQ; GONG B; WAN Y; MU SM; ZHAO QT; WANG ZL 收藏  |  浏览/下载：18/0  |  提交时间：2010/11/15 ION-IMPLANTATION  AMORPHIZATION