机构

• 半导体研究所 [14]

采集方式

• OAI收割 [14]

内容类型

• 期刊论文 [12]
• 会议论文 [2]

发表日期

• 2015 [1]
• 2012 [2]
• 2011 [1]
• 2009 [2]
• 2008 [1]
• 2005 [1]
• 更多

学科主题

• 半导体器件 [14]

筛选

浏览/检索结果: 共14条，第1-10条 帮助 限定条件 学科主题：半导体器件     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Excellent ESD Resistance Property of InGaN LEDs With Enhanced Internal Capacitance 期刊论文  OAI收割 ieee photonics technology letters, 2015, 卷号: 27, 期号: 19, 页码: 2004-2006 Panpan Li; Hongjian Li; Yongbing Zhao; Junjie Kang; Zhicong Li; Zhiqiang Liu; Xiaoyan Yi; Jinmin Li; Guohong Wang 收藏  |   Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes 期刊论文  OAI收割 chinese physics b, 2012, 卷号: 21, 期号: 1, 页码: 17103 Cao, ZF; Lin, ZJ; Lu, YJ; Luan, CB; Yu, YX; Chen, H; Wang, ZG 收藏  |   Double-Peak N-Shaped Negative Differential Resistance in a Quantum Dot Field Effect Transistor 期刊论文  OAI收割 chinese physics letters, 2012, 卷号: 29, 期号: 8, 页码: 087303 Xu XN (Xu Xiao-Na); Wang XD (Wang Xiao-Dong); Li YQ (Li Yue-Qiang); Chen YL (Chen Yan-Ling); Ji A (Ji An); Zeng YP (Zeng Yi-Ping); Yang FH (Yang Fu-Hua) 收藏  |   Comprehensive thermal characterization using ruby R fluorescence lines of sapphire and GaNE(2)-high Raman mode from Raman spectra in high-power flip-chip InGaN/GaN LEDs 期刊论文  OAI收割 journal of physics d-applied physics, 2011, 卷号: 44, 期号: 35, 页码: 355101 Cui M; Zhou TF; Wang MR; Huang J; Huang HJ; Zhang JP; Xu K; Yang H 收藏  |   An asymmetric broad waveguide structure for a 0.98-μm high-conversion-efficiency diode laser 期刊论文  OAI收割 半导体学报, 2009, 卷号: 30, 期号: 6, 页码: 64-67 作者:  Wang Jun;  Wang Jun;  Wang Guan 收藏  |   A simple ac bridge for detecting small resistance change 期刊论文  OAI收割 review of scientific instruments, 2009, 卷号: 80, 期号: 8, 页码: art. no. 086104 Song XH; Jin YR; Zhang X; Yu YD; Zhang DL 收藏  |   Influence factors on wear resistance of two alumina matrix composites 期刊论文  OAI收割 wear, 2008, 卷号: 265, 期号: 39815, 页码: 27-33 Zhang, FC; Luo, HH; Wang, TS; Roberts, SG; Todd, RI 收藏  |   Back-to-back Schottky diode adopted for the measurement of GaN films and its Schottky contacts 期刊论文  OAI收割 semiconductor science and technology, 2005, 卷号: 20, 期号: 6, 页码: 606-610 Luo Q; Du JF; Yang MH; Wang LC; Jin T; Yu Q 收藏  |   Design, simulation and testing of large area silicon drift detectors and detector array for X-ray spectroscopy 期刊论文  OAI收割 ieee transactions on nuclear science, 2000, 卷号: 47, 期号: 4 part.1., 页码: 1381-1385 Zhang WC; Li Z; Siddons DP; Huang T; Zhao LJ; Kakuno EM; Pietraski P; Li CJ 收藏  |   Design, simulation and testing of large area silicon drift detectors and detector array for X-ray spectroscopy 会议论文  OAI收割 nuclear science symposium (nss), seattle, washington, oct 26-28, 1999 Zhang WC; Li Z; Siddons DP; Huang T; Zhao LJ; Kakuno EM; Pietraski P; Li CJ 收藏  |