机构

• 半导体研究所 [26]

采集方式

• iSwitch采集 [15]
• OAI收割 [11]

内容类型

• 期刊论文 [25]
• 会议论文 [1]

发表日期

• 2010 [2]
• 2009 [1]
• 2008 [3]
• 2007 [1]
• 2006 [6]
• 2005 [1]
• 更多

学科主题

• 半导体物理 [10]
• 半导体材料 [1]

筛选

浏览/检索结果: 共26条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Band crossing in isovalent semiconductor alloys with large size mismatch: first-principles calculations of the electronic structure of bi and n incorporated gaas 期刊论文  iSwitch采集 Physical review b, 2010, 卷号: 82, 期号: 19, 页码: 4 作者:  Deng, Hui-Xiong;  Li, Jingbo;  Li, Shu-Shen;  Peng, Haowei;  Xia, Jian-Bai 收藏  |   Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs 期刊论文  OAI收割 physical review b, PHYSICAL REVIEW B, 2010, 2010, 卷号: 82, 82, 期号: 19, 页码: art. no. 193204, Art. No. 193204 作者:  Deng HX (Deng Hui-Xiong);  Li JB (Li Jingbo);  Li SS (Li Shu-Shen);  Peng HW (Peng Haowei);  Xia JB (Xia Jian-Bai)   |  收藏  |   Spin-Polarized Localized Exciton Photoluminescence Dynamics in GaInNAs Quantum Wells 期刊论文  OAI收割 japanese journal of applied physics, 2009, 卷号: 48, 期号: 10, 页码: art.no.100206 Lu SL (Lu, Shulong); Nosho H (Nosho, Hidetaka); Tackeuchi A (Tackeuchi, Atsushi); Bian LF (Bian, Lifeng); Dong JR (Dong, Jianrong); Niu ZC (Niu, Zhichuan) 收藏  |   P-type doping of gainnas quaternary alloys 期刊论文  iSwitch采集 Physics letters a, 2008, 卷号: 373, 期号: 1, 页码: 165-168 作者:  Shi, Hongliang;  Duan, Yifeng 收藏  |   Band-gap bowing and p-type doping of (zn, mg, be)o wide-gap semiconductor alloys: a first-principles study 期刊论文  iSwitch采集 European physical journal b, 2008, 卷号: 66, 期号: 4, 页码: 439-444 作者:  Shi, H. -L.;  Duan, Y. 收藏  |   p-type doping of GaInNAs quaternary alloys 期刊论文  OAI收割 physics letters a, 2008, 卷号: 373, 期号: 1, 页码: 165-168 Shi HL; Duan YF 收藏  |   Influence of n doping on the rashba coefficient, semiconductor-metal transition, and electron effective mass in insb1-xnx nanowires: ten-band k center dot p model 期刊论文  iSwitch采集 Physical review b, 2007, 卷号: 75, 期号: 20, 页码: 6 作者:  Zhang, X. W.;  Fan, W. J.;  Li, S. S.;  Xia, J. B. 收藏  |   Different temperature and pressure behavior of band edge and n-cluster emissions in gaas0.973sb0.022n0.005 期刊论文  iSwitch采集 Physical review b, 2006, 卷号: 74, 期号: 19, 页码: 6 作者:  Wang, W. J.;  Su, F. H.;  Ding, K.;  Li, G. H.;  Yoon, S. F. 收藏  |   Effect of nonradiative recombination on carrier dynamics in gainnas/gaas quantum wells 期刊论文  iSwitch采集 Chinese physics letters, 2006, 卷号: 23, 期号: 9, 页码: 2566-2569 作者:  Sun Zheng;  Wang Bao-Rui;  Xu Zhong-Ying;  Sun Bao-Quan;  Ji Yang 收藏  |   Nonradiative recombination effect on photoluminescence decay dynamics in gainnas/gaas quantum wells 期刊论文  iSwitch采集 Applied physics letters, 2006, 卷号: 88, 期号: 1, 页码: 3 作者:  Sun, Z;  Xu, ZY;  Yang, XD;  Sun, BQ;  Ji, Y 收藏  |