中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
计算技术研究所 [8]
近代物理研究所 [8]
国家空间科学中心 [7]
高能物理研究所 [5]
新疆理化技术研究所 [4]
上海微系统与信息技术... [3]
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OAI收割 [42]
iSwitch采集 [3]
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期刊论文 [39]
会议论文 [5]
学位论文 [1]
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2023 [2]
2022 [5]
2021 [2]
2020 [3]
2019 [6]
2018 [4]
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空间环境 [2]
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半导体物理 [1]
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Asymptotically Optimal Circuit Depth for Quantum State Preparation and General Unitary Synthesis
期刊论文
OAI收割
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2023, 卷号: 42, 期号: 10, 页码: 3301-3314
作者:
Sun, Xiaoming
;
Tian, Guojing
;
Yang, Shuai
;
Yuan, Pei
;
Zhang, Shengyu
  |  
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2023/12/04
Circuit depth
depth-space tradeoff
quantum circuit
state preparation
unitary synthesis
Swarm Intelligence-Based Task Scheduling for Enhancing Security for IoT Devices
期刊论文
OAI收割
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2023, 卷号: 42, 期号: 6, 页码: 1756-1769
作者:
Zhou, Junlong
;
Shen, Yufan
;
Li, Liying
;
Zhuo, Cheng
;
Chen, Mingsong
  |  
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2023/12/04
Security
Internet of Things
Task analysis
Logic gates
Servers
Particle swarm optimization
Optimization
Energy efficiency
fund
Index Terms
Internet of Things (IoT)
mixed-integer linear programming (MILP)
security
swarm intelligence
task scheduling
Re-FeMAT: A Reconfigurable Multifunctional FeFET-Based Memory Architecture
期刊论文
OAI收割
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2022, 卷号: 41, 期号: 11, 页码: 5071-5084
作者:
Zhang, Xiaoyu
;
Liu, Rui
;
Song, Tao
;
Yang, Yuxin
;
Han, Yinhe
  |  
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2023/07/12
Convolutional neural network (CNN)
ferroelectric field-effect transistor (FeFET)
few-shot learning
in-memory processing
ternary content-addressable memory (TCAM)
Transient Current Analysis of Silicon Carbide Neutron Detector Using SRIM and TCAD
期刊论文
OAI收割
IEEE SENSORS JOURNAL, 2022, 卷号: 22
作者:
Zhang, Lilong
;
Wang, Ying
;
Guo, Haomin
;
Yu, Chenghao
;
Hu, Haifan
  |  
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2022/12/23
Neutron detector
silicon carbide
transient current
charge collection
SRIM and TCAD
A Machine Learning Approach for Optimization of Channel Geometry and Source/Drain Doping Profile of Stacked Nanosheet Transistors
期刊论文
OAI收割
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 页码: 7
作者:
Xu, Haoqing
;
Gan, Weizhuo
;
Cao, Lei
;
Yang, Cheng
;
Wu, Jiahao
  |  
收藏
  |  
浏览/下载:41/0
  |  
提交时间:2022/12/07
Performance evaluation
Doping
Optimization
Geometry
Semiconductor process modeling
Training
Logic gates
Machine learning
multi-objective optimization (MOO)
nanosheet
technology computer-aided design (TCAD) simulation
Low Gain Avalanche Detectors with good time resolution developed by IHEP and IME for ATLAS HGTD project
期刊论文
OAI收割
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2022, 卷号: 1033, 页码: 166604
作者:
Zhao, Mei,
;
Jia, Xuewei,
;
Wu, Kewei,
;
Yang, Tao,
;
Li, Mengzhao,
  |  
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2023/11/10
Design of AC-coupled low gain avalanche diodes (AC-LGADs): a 2D TCAD simulation study
期刊论文
OAI收割
Journal of Instrumentation, 2022, 卷号: 17, 期号: 9, 页码: C09014
作者:
Zhang, X.
;
Zhao, M.,
;
Zhang, L.
;
Yang, T.,
;
Guimarães da Costa, J.
  |  
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2023/11/10
Effect of charge coupling on breakdown voltage of high voltage trench-gate-type super barrier rectifier
期刊论文
OAI收割
ACTA PHYSICA SINICA, 2021, 卷号: 70
作者:
Xu Da-Lin
;
Wang Yu-Qi
;
Li Xin-Hua
;
Shi Tong-Fei
  |  
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2021/04/26
trench-gate-type super barrier rectifier
charge coupling
breakdown voltage
stepped oxide
Role of the oxide trapped charges in charge coupled device ionizing radiation-induced dark signal
期刊论文
OAI收割
RADIATION PHYSICS AND CHEMISTRY, 2021, 卷号: 189, 期号: 12, 页码: 1-5
作者:
Li, YD (Li, Yudong)
;
Liu, BK (Liu, Bingkai)
;
Wen, L (Wen, Lin)
;
Wei, Y (Wei, Ying)
;
Zhou, D (Zhou, Dong)
  |  
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2021/10/14
Radiation effectsTotal ionizing dose (TID)Charge coupled device (CCD)Dark signalOxide trapped charges
An investigation of FinFET single-event latch-up characteristic and mitigation method
期刊论文
OAI收割
MICROELECTRONICS RELIABILITY, 2020, 卷号: 114, 页码: 8
作者:
Li, Dongqing
;
Liu, Tianqi
;
Wu, Zhenyu
;
Cai, Chang
;
Zhao, Peixiong
  |  
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2021/12/13
TCAD
FinFET
SCR
SEL