机构

• 半导体研究所 [8]

采集方式

• OAI收割 [8]

内容类型

• 期刊论文 [8]

发表日期

• 2005 [8]

学科主题

• 半导体材料 [8]

筛选

浏览/检索结果: 共8条，第1-8条 帮助 限定条件 发表日期：2005    学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Growth and characterization of 0.8-mu m gate length AlGaN/GaN HEMTs on sapphire substrates 期刊论文  OAI收割 science in china series f-information sciences, 2005, 卷号: 48, 期号: 6, 页码: 808-814 Wang XL; Wang CM; Hu GX; Wang JX; Ran JX; Fang CB; Li JP; Zeng YP; Li JM; Liu XY; Liu J; Qian H 收藏  |   Room Temperature Operation of Strain-Compensated 5.5μm Quantum Cascade Lasers 期刊论文  OAI收割 半导体学报, 2005, 卷号: 26, 期号: 12, 页码: 2267-2270 作者:  Liu Junqi;  Jin Peng 收藏  |   Controlled growth of III-V compound semiconductor nano-structures and their application in quantum-devices 期刊论文  OAI收割 pricm 5: the fifth pacific rim international conference on advanced materials and processing, 2005, 卷号: pts 1-5, 期号: 475-479, 页码: 1783-1786 作者:  Xu B;  Ye XL 收藏  |   Realization of GaAs/AlGaAs quantum-cascade lasers with high average optical power 期刊论文  OAI收割 solid-state electronics, 2005, 卷号: 49, 期号: 12, 页码: 1961-1964 Liu JQ; Liu FQ; Lu XZ; Guo Y; Wang ZG 收藏  |   High temperature operation of 5.5 mu m strain-compensated quantum cascaded lasers 期刊论文  OAI收割 chinese physics letters, 2005, 卷号: 22, 期号: 12, 页码: 3077-3079 Lu, XZ; Liu, FQ; Liu, JQ; Jin, P; Wang, ZG 收藏  |   Improved DC and RF performance of AlGaN/GaN HEMTs grown by MOCVD on sapphire substrates 期刊论文  OAI收割 solid-state electronics, 2005, 卷号: 49, 期号: 8, 页码: 1387-1390 Wang XL; Wang CM; Hu GX; Wang JX; Chen TS; Jiao G; Li JP; Zeng YP; Li JM 收藏  |   Optical Pr operties of GaNAs and GaAsSb Semiconductors 期刊论文  OAI收割 中国科学院研究生院学报, 2005, 卷号: 22, 期号: 5, 页码: 645-655 Luo Xiangdong; Xu Zhongying 收藏  |   Time-resolved photoluminescence of sub-monolayer InGaAs/GaAs quantum-dot-quantum-well heterostructures 期刊论文  OAI收割 acta physica sinica, 2005, 卷号: 54, 期号: 11, 页码: 5367-5371 Xu ZC; Jia GZ; Sun L; Yao JH; Xu JJ 收藏  |