机构

• 半导体研究所 [13]

采集方式

• OAI收割 [13]

内容类型

• 会议论文 [13]

发表日期

• 2009 [1]
• 2008 [1]
• 2007 [1]
• 2006 [1]
• 2004 [1]
• 2002 [1]
• 更多

学科主题

• 半导体材料 [13]

筛选

浏览/检索结果: 共13条，第1-10条 帮助 限定条件 内容类型：会议论文    学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD 会议论文  OAI收割 international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007 Sun, GS; Zhao, YM; Wang, L; Wang, L; Zhao, WS; Liu, XF; Ji, G; Zeng, YP 收藏  |  浏览/下载：39/0  |  提交时间：2010/03/09 in-situ doping  boron  aluminum  memory effects  hot-wall LPCVD  4H-SiC   Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy 会议论文  OAI收割 2nd ieee international nanoelectronics conference, shanghai, peoples r china, mar 24-27, 2008 Liang, LY; Ye, XL; Jin, P; Chen, YH; Wang, ZG 收藏  |  浏览/下载：28/0  |  提交时间：2010/03/09 INDUCED REFRACTIVE-INDEX  GROWTH  LASERS  GAAS   The effect of interposing nanocrystalline Si(B) P plus layer on the photovoltaic properties of a-Si: H tandem solar cells 会议论文  OAI收割 solar world congress of the international-solar-energy-society, beijing, peoples r china, sep 18-21, 2007 Shi, MJ; Wang, ZG; Zhang, C; Peng, WB; Zeng, XB; Diao, HW; Kong, GL; Liao, XB 收藏  |  浏览/下载：35/0  |  提交时间：2010/03/09 Lateral intersubband photocurrent study on InAs/InAlas/InP self-assembled nanostructures 会议论文  OAI收割 2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004 作者:  Ye XL;  Jin P;  Xu B 收藏  |  浏览/下载：119/42  |  提交时间：2010/03/29 lateral intersubband photocurrent   Effect of noncoherent islands on the optical properties of the 1.3 mu m InAs/GaAs quantum dots during rapid thermal annealing 会议论文  OAI收割 13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004 作者:  Xu B;  Jin P;  Ye XL 收藏  |  浏览/下载：82/12  |  提交时间：2010/03/29 1.3 MU-M   Impact of wide bandgap p-type nc-Si on the performance of a-Si solar cells 会议论文  OAI收割 international conference on material for advanced technologies, singapore, singapore, jul 01-06, 2001 Deng X; Wang W; Han S; Povolny H; Du W; Liao X; Xiang X 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 Residual donors in undoped LEC InP 会议论文  OAI收割 11th international semiconducting and insulating materials conference (simc-xi), canberra, australia, jul 03-07, 2000 Zhao YW; Sun NF; Sun TN; Lin LY; Wu XW; Guo WL; Wu X; Bi KY 收藏  |  浏览/下载：13/0  |  提交时间：2010/10/29 INDIUM-PHOSPHIDE  CARBON  DEFECTS  GROWTH   Influence of precipitates on GaN epilayer quality 会议论文  OAI收割 iumrs international conference of advanced materials, beijing, peoples r china, jun 13-18, 1999 Kang JY; Huang QS; Wang ZG 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 precipitate  GaN  WDS  TEM  cathodoluminescence  VAPOR-PHASE EPITAXY  FILMS  MECHANISM  GROWTH   Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy 会议论文  OAI收割 50th iumrs international conference on advanced materials, beijing, peoples r china, jun 13-18, 1999 作者:  Xu B;  Ye XL 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/15 quantum dots  high index  molecular beam epitaxy  photoluminescence  SURFACE SEGREGATION  ORIENTED GAAS  INGAAS  ISLANDS  WELLS  DISKS   Semi-insulating GaAs grown in outer space 会议论文  OAI收割 iumrs international conference of advanced materials, beijing, peoples r china, jun 13-18, 1999 Chen NF; Zhong XR; Lin LY; Xie X; Zhang M 收藏  |  浏览/下载：20/0  |  提交时间：2010/11/15 GaAs  outer space  microgravity  integrated circuit  SEMIINSULATING GALLIUM-ARSENIDE  LEC-GAAS  DEFECTS  STOICHIOMETRY  SEGREGATION  CARBON  BORON