机构

• 新疆理化技术研究所 [5]

采集方式

• OAI收割 [5]

内容类型

• 期刊论文 [5]

发表日期

• 2020 [5]

学科主题

筛选

浏览/检索结果: 共5条，第1-5条 帮助 限定条件 专题：新疆理化技术研究所    第一署名单位    第一作者单位    通讯作者单位    发表日期：2020     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Displacement damage effects induced by fast neutron in backside-illuminated CMOS image sensors 期刊论文  OAI收割 JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY, 2020, 卷号: 57, 期号: 9, 页码: 1015-1021 作者:  Zhang, X (Zhang, Xiang)[ 1,2,3 ];  Li, YD (Li, Yudong)[ 1,2 ];  Wen, L (Wen, Lin)[ 1,2 ];  Feng, J (Feng, Jie)[ 1,2 ];  Zhou, D (Zhou, Dong)[ 1,2 ]   |  收藏  |  浏览/下载：12/0  |  提交时间：2020/12/09 14-MeV neutron  neutron irradiation  radiation damage  radiation effect   Optoelectronic Performance Analysis of Low-Energy Proton Irradiation and Post-Thermal Annealing Effects on InGaAs Solar Cell 期刊论文  OAI收割 FRONTIERS IN PHYSICS, 2020, 卷号: 8, 期号: 11, 页码: 1-7 作者:  Zhuang, Y (Zhuang, Y.)[ 1 ];  Aierken, A (Aierken, A.)[ 1 ];  Lei, QQ (Lei, Q. Q.)[ 2,3 ];  Fang, L (Fang, L.)[ 4 ];  Shen, XB (Shen, X. B.)[ 2,3 ]   |  收藏  |  浏览/下载：19/0  |  提交时间：2021/01/05 InGaAs solar cell  proton irradiation  displacement damage  degradation  annealing   Degradation characteristics of electron and proton irradiated InGaAsP/InGaAs dual junction solar cell 期刊论文  OAI收割 SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2020, 卷号: 206, 期号: 3, 页码: 1-7 作者:  Zhao, XF (Zhao, X. F.)[ 1 ];  Aierken, A (Aierken, A.)[ 1,2 ];  Heini, M (Heini, M.)[ 1,3 ];  Tan, M (Tan, M.)[ 4 ];  Wu, YY (Wu, Y. Y.)[ 4 ]   |  收藏  |  浏览/下载：15/0  |  提交时间：2020/04/21 InGaAsP/InGaAs solar cell  Electron and proton irradiation  Degradation  Equivalent displacement damage dose model   A study of hot pixels induced by proton and neutron irradiations in charge coupled devices 期刊论文  OAI收割 RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 540-550 作者:  Liu, BK (Liu, Bingkai)[ 1,2,3 ];  Li, YD (Li, Yudong)[ 1,2 ];  Wen, L (Wen, Lin)[ 1,2 ];  Zhou, D (Zhou, Dong)[ 1,2 ];  Feng, J (Feng, Jie)[ 1,2 ]   |  收藏  |  浏览/下载：25/0  |  提交时间：2020/07/06 Charge coupled devices (CCDs)  proton irradiation  neutron irradiation  hot pixels  displacement damage effects   The influence of channel width on total ionizing dose responses of the 130 nm H-gate partially depleted SOI NMOSFETs 期刊论文  OAI收割 RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 551-558 作者:  Xi, SX (Xi, Shan-Xue)[ 1,2,3 ];  Zheng, QW (Zheng, Qi-Wen)[ 1,2 ];  Lu, W (Lu, Wu)[ 1,2 ];  Cui, JW (Cui, Jiang-Wei)[ 1,2 ];  Wei, Y (Wei, Ying)[ 1,2 ]   |  收藏  |  浏览/下载：14/0  |  提交时间：2020/07/06 Total ionizing dose  h-shape gate  channel width  partially depleted