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The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes 期刊论文  OAI收割
AIP ADVANCES, 2016, 卷号: 6, 期号: 3
作者:  
Chen, P;  Zhao, DG;  Jiang, DS;  Zhu, JJ;  Liu, ZS
收藏  |  浏览/下载:16/0  |  提交时间:2017/03/11
A High Power InGaN-Based Blue-Violet Laser Diode Array with a Broad-Area Stripe 期刊论文  OAI收割
CHINESE PHYSICS LETTERS, 2013, 卷号: 30, 期号: 10
作者:  
Liu, JP(刘建平);  Li, DY(李德尧);  Zhang, LQ(张立群);  Zhang, SM(张书明);  Yang, H(杨辉)
收藏  |  浏览/下载:20/0  |  提交时间:2013/12/30
High efficient GaN-based laser diodes with tunnel junction 期刊论文  OAI收割
APPLIED PHYSICS LETTERS, 2013, 卷号: 103, 期号: 4
作者:  
Li, DY(李德尧);  Zhang, SM(张书明);  Liu, JP(刘建平);  Zhang, LQ(张立群);  Sun, Q(孙钱)
收藏  |  浏览/下载:17/0  |  提交时间:2014/01/13
Optimization of the cavity facet coating in high power GaN-based semiconductor laser diodes 期刊论文  OAI收割
Science China Technological Sciences, 2012, 卷号: 21, 期号: 8, 页码: 084209
作者:  
HuaiBingWang (王怀兵);  JianPingLiu (刘建平);  HuiYang (杨辉);  ShuMingZhang (张书明)
收藏  |  浏览/下载:12/0  |  提交时间:2013/01/16
Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure 期刊论文  OAI收割
Chinese Physics Letters, 2010, 卷号: 27, 期号: 5
作者:  
Zhang SM (张书明);  Zhang LQ;  Ji L (季莲);  Yang H (杨辉)
收藏  |  浏览/下载:9/0  |  提交时间:2011/03/13