机构

• 半导体研究所 [29]

采集方式

• OAI收割 [29]

内容类型

• 期刊论文 [27]
• 会议论文 [2]

发表日期

• 2015 [1]
• 2009 [3]
• 2008 [1]
• 2006 [4]
• 2005 [2]
• 2003 [1]
• 更多

学科主题

• 半导体材料 [29]

筛选

浏览/检索结果: 共29条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Epitaxial properties of ZnO thin films on LaAlO3 substrates by pulsed laser deposition 期刊论文  OAI收割 journal of crystal growth, 2015, 卷号: 421, 页码: 19–22 C.H. Jia; S.Wang; Y.H.Wu; Y.H.Chen; X.W.Sun; W.F.Zhang 收藏  |  浏览/下载：21/0  |  提交时间：2016/03/23 Effect of silver growth temperature on the contacts between Ag and ZnO thin films 期刊论文  OAI收割 science in china series e-technological sciences, 2009, 卷号: 52, 期号: 9, 页码: 2779-2784 作者:  Li XK 收藏  |  浏览/下载：90/1  |  提交时间：2010/03/08 ZnO  Schottky barrier  interface  MSM structure   Structural and optical properties of ZnO films on SrTiO3 substrates by MOCVD 期刊论文  OAI收割 journal of physics d-applied physics, 2009, 卷号: 42, 期号: 1, 页码: art. no. 015415 作者:  Jia CH 收藏  |  浏览/下载：173/14  |  提交时间：2010/03/08 PULSED-LASER DEPOSITION  THIN-FILMS  ZINC-OXIDE  PHOTOLUMINESCENCE  TEMPERATURE  SAPPHIRE  SURFACE  GROWTH   Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer 期刊论文  OAI收割 materials science in semiconductor processing, 2009, 卷号: 12, 期号: 6, 页码: 233-237 作者:  Zhao J 收藏  |  浏览/下载：43/4  |  提交时间：2011/07/05 ZnO  Pulsed laser deposition  X-ray diffraction  Photoluminescence  Reflection high-energy electron diffraction  PULSED-LASER DEPOSITION  THIN-FILMS  PLD TECHNIQUE  GROWTH  SAPPHIRE  TEMPERATURE   The effects of substrate temperature on the structure and properties of ZnO films prepared by pulsed laser deposition 期刊论文  OAI收割 vacuum, 2008, 卷号: 82, 期号: 5, 页码: 495-500 Zhu, BL; Sun, XH; Zha, XZ; Su, FH; Li, GH; Wu, XG; Wu, J; Wu, R; Liu, J 收藏  |  浏览/下载：46/1  |  提交时间：2010/03/08 PLD  ZnO films  substrate temperature  crystal quality  grain size  optical properties   MBE InAs quantum dots grown on metamorphic InGaAs for long wavelength emitting 期刊论文  OAI收割 physica e-low-dimensional systems & nanostructures, 2006, 卷号: 35, 期号: 1, 页码: 194-198 Jiao YH (Jiao Y. H.); Wu J (Wu J.); Xu B (Xu B.); Jin P (Jin P.); Hu LJ (Hu L. J.); Liang LY (Liang L. Y.); Wang ZG (Wang Z. G.) 收藏  |  浏览/下载：35/0  |  提交时间：2010/04/11 metamorphic  long wavelength  quantum dots  molecular beam epitaxy  MOLECULAR-BEAM EPITAXY  CHEMICAL-VAPOR-DEPOSITION  1.3 MU-M  GAAS  EMISSION  RANGE  ISLANDS  ARRAYS  LASERS   Effect of substrate temperature on the growth and photoluminescence properties of vertically aligned ZnO nanostructures 期刊论文  OAI收割 journal of crystal growth, 2006, 卷号: 292, 期号: 1, 页码: 19-25 Li C (Li Chun); Fang GJ (Fang Guojia); Fu Q (Fu Qiang); Su FH (Su Fuhai); Li GH (Li Guohua); Wu XG (Wu Xiaoguang); Zhao XZ (Zhao Xingzhong) 收藏  |  浏览/下载：21/0  |  提交时间：2010/04/11 nanostructure  vapor phase transport  ZnO  semiconductor materials  PHYSICAL VAPOR-DEPOSITION  OPTICAL-PROPERTIES  THERMAL EVAPORATION  FIELD-EMISSION  NANOWIRES  NANORODS  MECHANISM  ARRAYS   ZnO thin films on Si(111) grown by pulsed laser deposition from metallic Zn target 期刊论文  OAI收割 applied surface science, 2006, 卷号: 253, 期号: 2, 页码: 841-845 Zhao J (Zhao Jie); Hu LZ (Hu Lizhong); Wang ZY (Wang Zhaoyang); Sun J (Sun Jie); Wang ZJ (Wang Zhijun) 收藏  |  浏览/下载：24/0  |  提交时间：2010/04/11 ZnO  pulsed laser deposition  oxygen pressure  annealing  X-ray diffraction  photoluminescence  ULTRAVIOLET EMISSION  ROOM-TEMPERATURE  ZINC-OXIDE   Optical and structural properties of ZnO films grown on Si(100) substrates by MOCVD - art. no. 60290G 会议论文  OAI收割 20th congress of the international-commission-for-optics, changchun, peoples r china, aug 21-26, 2005 Shen, WJ; Duan, Y; Wang, J; Wang, QY; Zeng, YP 收藏  |  浏览/下载：94/18  |  提交时间：2010/03/29 ZnO  MOCVD  thermal annealing  photoluminescence  x-ray diffraction  atomic force microscopy  PULSED-LASER DEPOSITION  THIN-FILMS  PHOTOLUMINESCENCE  MECHANISMS  EPITAXY  CVD  SI   Growth and characterization of 0.8-mu m gate length AlGaN/GaN HEMTs on sapphire substrates 期刊论文  OAI收割 science in china series f-information sciences, 2005, 卷号: 48, 期号: 6, 页码: 808-814 Wang XL; Wang CM; Hu GX; Wang JX; Ran JX; Fang CB; Li JP; Zeng YP; Li JM; Liu XY; Liu J; Qian H 收藏  |  浏览/下载：325/7  |  提交时间：2010/04/11 HEMT  GaN  MOCVD  power device  FIELD-EFFECT TRANSISTORS  SURFACE PASSIVATION