机构

• 半导体研究所 [8]

采集方式

• OAI收割 [8]

内容类型

• 期刊论文 [8]

发表日期

• 2011 [2]
• 2009 [1]
• 2007 [1]
• 2006 [3]
• 2000 [1]

学科主题

• 光电子学 [8]

筛选

浏览/检索结果: 共8条，第1-8条 帮助 限定条件 学科主题：光电子学     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Localized flexible integration of high-efficiency surface enhanced Raman scattering (SERS) monitors into microfluidic channels 期刊论文  OAI收割 lab on a chip, 2011, 卷号: 11, 期号: 19, 页码: 3347-3351 Xu, BB; Ma, ZC; Wang, L; Zhang, R; Niu, LG; Yang, Z; Zhang, YL; Zheng, WH; Zhao, B; Xu, Y; Chen, QD; Xia, H; Sun, HB 收藏  |  浏览/下载：19/0  |  提交时间：2012/02/06 MICROCHIP ELECTROPHORESIS  RESONANCE RAMAN  SINGLE-MOLECULE  GLUCOSE-OXIDASE  SILVER  CHIP  SPECTROSCOPY  NANOPARTICLES  SPECTROMETRY  FABRICATION   Bimetallic chips for a surface plasmon resonance instrument 期刊论文  OAI收割 applied optics, 2011, 卷号: 50, 期号: 3, 页码: 387-391 Chen Y; Zheng RS; Zhang DG; Lu YH; Wang P; Ming H; Luo ZF; Kan Q 收藏  |  浏览/下载：56/2  |  提交时间：2011/07/05 SENSITIVITY ENHANCEMENT  SENSORS  SPECTROSCOPY  LAYERS   Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition 期刊论文  OAI收割 journal of physics d-applied physics, 2009, 卷号: 42, 期号: 14, 页码: art. no. 145410 作者:  Zhang SM;  Yang H;  Yang H;  Wang YT;  Zhu JJ 收藏  |  浏览/下载：72/0  |  提交时间：2010/03/08 MOLECULAR-BEAM EPITAXY  PHASE EPITAXY  QUANTUM DOTS  BAND-GAP  GROWTH  SURFACES   Optical analysis of dislocation-related physical processes in GaN-based epilayers 期刊论文  OAI收割 physica status solidi b-basic solid state physics, 2007, 卷号: 244, 期号: 8, 页码: 2878-2891 Jiang, DS (Jiang, De-Sheng); Zhao, DG (Zhao, De-Gang); Yang, H (Yang, Hui) 收藏  |  浏览/下载：47/0  |  提交时间：2010/03/29 CHEMICAL-VAPOR-DEPOSITION   Investigation of a chemically treated InP(100) surface during hydrophilic wafer bonding process 期刊论文  OAI收割 materials science and engineering b-solid state materials for advanced technology, 2006, 卷号: 128, 期号: 1-3, 页码: 93-97 作者:  Yu LJ 收藏  |  浏览/下载：66/0  |  提交时间：2010/04/11 surface micro-roughness  contact angle  root-mean-square roughness  SILICON-WAFERS  ROUGHNESS  INP   Temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates 期刊论文  OAI收割 journal of applied physics, 2006, 卷号: 100, 期号: 10, 页码: art.no.103503 Liang S (Liang S.); Zhu HL (Zhu H. L.); Wang W (Wang W.) 收藏  |  浏览/下载：28/0  |  提交时间：2010/04/11 CHEMICAL-VAPOR-DEPOSITION  OPTICAL-PROPERTIES  PHASE-EPITAXY  MU-M  GAAS  SURFACE  GROWTH  MISORIENTATION  FABRICATION  UNIFORMITY   Improved surface morphology of stacked 1.3 mu m InAs/GaAs quantum dot active regions by introducing annealing processes 期刊论文  OAI收割 applied physics letters, 2006, 卷号: 89, 期号: 8, 页码: art.no.081902 Yang T (Yang Tao); Tatebayashi J (Tatebayashi Jun); Nishioka M (Nishioka Masao); Arakawa Y (Arakawa Yasuhiko) 收藏  |  浏览/下载：43/0  |  提交时间：2010/04/11 CHEMICAL-VAPOR-DEPOSITION  THRESHOLD CURRENT  ROOM-TEMPERATURE  LASERS  MODULATION  LAYER   The improvement characteristics of homoepitaxial GaAs grown by atomic hydrogen-assisted molecular beam epitaxy 期刊论文  OAI收割 journal of infrared and millimeter waves, 2000, 卷号: 19, 期号: 3, 页码: 191-193 Wang HL; Zhu HJ; Ning D; Wang H; Wang XD; Guo ZS; Feng SL 收藏  |  浏览/下载：80/0  |  提交时间：2010/08/12 atomic hydrogen-assisted molecular beam epitaxy  deep level transient spectroscopy  deep level defects  DISLOCATION DENSITY  IRRADIATION