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CAS IR Grid
机构
长春光学精密机械与物... [2]
大连化学物理研究所 [2]
半导体研究所 [2]
新疆理化技术研究所 [1]
过程工程研究所 [1]
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OAI收割 [8]
内容类型
会议论文 [8]
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2014 [1]
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半导体材料 [2]
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The room temperature ferromagnetism of (N, Co) co-doped ZnO nanopaticles
会议论文
OAI收割
3rd International Conference on Mechanical, Control, and Electronic Information, ICMCEI 2014, June 27, 2014 - June 29, 2014, Taiwan
Cao P.
;
Bai Y.
;
Qu Z.
收藏
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浏览/下载:16/0
  |  
提交时间:2015/04/27
Synthesis of transition metal (Cu, Fe and Co) doped ZnS nanostructures
会议论文
OAI收割
2012 2nd International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale, 3M-NANO 2012, Xi'an, China, August 29, 2012 - September 1, 2012
作者:
ChangAi-Min
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  |  
浏览/下载:8/0
  |  
提交时间:2014/11/10
ZnS
solvothermal
phase transformation
doping
nanostructures
Synthesis of hetero-atom doped graphene and its catalytic application
会议论文
OAI收割
international conference on clean energy science 2011, 大连, 2011-4-10
邓德会
;
潘秀莲
;
于良
;
陈晓琪
;
包信和
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2012/07/09
Redox characteristics of the LaFe1-xPdxO3 perovskites prepared by a simple sol-gel process
会议论文
OAI收割
6th international conference on environmental catalysis, 中国, 2010-9-12
张晓静
;
李华举
;
李勇
;
申文杰
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2011/07/11
Decomposition of CO2 coupled with POM in a thin tubular oxygen-permeable membrane reactor
会议论文
OAI收割
10th International Conference on CO2 Utilization (ICCDU-X), Tianjin, PEOPLES R CHINA, MAY 17-21, 2009
作者:
Zhang, C.
;
Jin, W. Q.
;
Yang, C.
;
Xu, N. P.
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2014/08/28
Carbon dioxide
Thermal decomposition
POM
Thin tubular membrane
reactor
PARTIAL OXIDATION
THERMAL-DECOMPOSITION
HIGH-TEMPERATURE
CARBON-DIOXIDE
METHANE
SYNGAS
CONVERSION
Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode (EI CONFERENCE)
会议论文
OAI收割
12th International Conference on II-VI Compounds, September 12, 2005 - September 16, 2005, Warsaw, Poland
Jiao S. J.
;
Lu Y. M.
;
Shen D. Z.
;
Zhang Z. Z.
;
Li B. H.
;
Zhang J. Y.
;
Yao B.
;
Liu Y. C.
;
Fan X. W.
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2013/03/25
ZnO/GaN p-i-n heterojunctions light emitting diodes were fabricated by plasma-assisted molecular beam epitaxy. We make use of high resistivity of nitrogen doped ZnO to fabricate n-ZnO/i-ZnO/p-GaN heterojunction light emitting diode. The emission of i-ZnO was obtained due to the limitation effect of i-ZnO on electrons and holes. Moreover
n-ZnO/i-MgO/p-GaN heterojunction light emitting diode was also fabricated. The limitation effect on electrons is increased in this heterojunction. The bright ultraviolet electroluminescence at 382 nm originating from the ZnO layer was observed in the room temperature electroluminescence spectrum. We hope to realize the stimulated emission of ZnO using these heterojunctions by the improvement of crystal quality and the optimization of device structure. 2006 WILEY-VCH Verlag GmbH Co. KGaA.
Influence of Al content on electrical and structural properties of Si-doped AlxGa1-xN/GaN HEMT structures
会议论文
OAI收割
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Wang, CM
;
Wang, XL
;
Hu, GX
;
Wang, JX
;
Li, JP
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  |  
浏览/下载:117/30
  |  
提交时间:2010/03/29
HIGH BREAKDOWN VOLTAGE
MOBILITY TRANSISTORS
HETEROSTRUCTURES
SAPPHIRE
GANHEMTS
In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD
会议论文
OAI收割
international conference on silicon carbide and related materials, tsukuba, japan, oct 28-nov 02, 2001
Sun GS
;
Luo MC
;
Wang L
;
Zhu SR
;
Li JM
;
Zeng YP
;
Lin LY
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2010/11/15
3C-SiC
in-situ doping
low-pressure CVD
sapphire substrate
CHEMICAL-VAPOR-DEPOSITION
COMPETITION EPITAXY