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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [34]
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OAI收割 [34]
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期刊论文 [29]
会议论文 [5]
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2011 [3]
2010 [1]
2009 [3]
2008 [2]
2007 [2]
2006 [3]
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学科主题
半导体材料 [34]
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Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure
期刊论文
OAI收割
journal of non-crystalline solids, 2011, 卷号: 357, 期号: 1, 页码: 121-125
作者:
Wang C
收藏
  |  
浏览/下载:69/3
  |  
提交时间:2011/07/05
Hydrogenated nanocrystalline silicon
Buffer layer
i/p interface
Solar cells
OPEN-CIRCUIT VOLTAGE
A-SI-H
P/I-INTERFACE
MICROCRYSTALLINE SILICON
VAPOR-DEPOSITION
FILMS
CAPACITANCE
EFFICIENCY
CRYSTALLINE
TEMPERATURE
Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation
期刊论文
OAI收割
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016
Li H
;
Zhou K
;
Pang JB
;
Shao YD
;
Wang Z
;
Zhao YW
收藏
  |  
浏览/下载:52/10
  |  
提交时间:2011/07/05
UNDOPED GALLIUM ANTIMONIDE
SELF-DIFFUSION
NATIVE DEFECTS
N-TYPE
CRYSTALS
CATHODOLUMINESCENCE
PHOTOLUMINESCENCE
SEMICONDUCTORS
SPECTROSCOPY
LUMINESCENCE
Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy
期刊论文
OAI收割
nanoscale research letters, 2011, 卷号: 6, 页码: article no.50
作者:
Wei HY
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  |  
浏览/下载:64/2
  |  
提交时间:2011/07/05
CHEMICAL-VAPOR-DEPOSITION
CORE-LEVEL PHOTOEMISSION
SB-DOPED SNO2
INN
GROWTH
GAN
NAXWO3
ALLOYS
GREEN
STATE
Effects of Hydrogen Plasma Treatment on the Electrical and Optical Properties of ZnO Films: Identification of Hydrogen Donors in ZnO
期刊论文
OAI收割
acs applied materials & interfaces, 2010, 卷号: 2, 期号: 6, 页码: 1780-1784
Dong JJ (Dong J. J.)
;
Zhang XW (Zhang X. W.)
;
You JB (You J. B.)
;
Cai PF (Cai P. F.)
;
Yin ZG (Yin Z. G.)
;
An Q (An Q.)
;
Ma XB (Ma X. B.)
;
Jin P (Jin P.)
;
Wang ZG (Wang Z. G.)
;
Chu PK (Chu Paul K.)
收藏
  |  
浏览/下载:151/22
  |  
提交时间:2010/07/05
hydrogen plasma treatment
zinc oxide
Raman spectroscopy
photoluminescence
RAMAN-SCATTERING
IMPLANTED ZNO
THIN-FILMS
DENSITY
In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD
会议论文
OAI收割
international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007
Sun, GS
;
Zhao, YM
;
Wang, L
;
Wang, L
;
Zhao, WS
;
Liu, XF
;
Ji, G
;
Zeng, YP
收藏
  |  
浏览/下载:39/0
  |  
提交时间:2010/03/09
in-situ doping
boron
aluminum
memory effects
hot-wall LPCVD
4H-SiC
The field emission properties of nonpolar a-plane n-type GaN films grown on nano-patterned sapphire substrates
期刊论文
OAI收割
physica status solidi a-applications and materials science, 2009, 卷号: 206, 期号: 7, 页码: 1501-1503
Sun LL
;
Yan FW
;
Wang JX
;
Zhang HX
;
Zeng YP
;
Wang GH
;
Li JM
收藏
  |  
浏览/下载:55/1
  |  
提交时间:2010/03/08
ELECTRON-AFFINITY
Determination of wurtzite InN/cubic In2O3 heterojunction band offset by x-ray photoelectron spectroscopy
期刊论文
OAI收割
applied physics letters, 2009, 卷号: 94, 期号: 22, 页码: art. no. 222114
作者:
Song HP
;
Wei HY
;
Zhang B
收藏
  |  
浏览/下载:198/0
  |  
提交时间:2010/03/08
conduction bands
III-V semiconductors
indium compounds
semiconductor heterojunctions
semiconductor materials
valence bands
X-ray photoelectron spectra
Investigation of native defects and property of bulk ZnO single crystal grown by a closed chemical vapor transport method
期刊论文
OAI收割
journal of crystal growth, 2008, 卷号: 310, 期号: 3, 页码: 639-645
Wei, XC
;
Zhao, YW
;
Dong, ZY
;
Li, JM
收藏
  |  
浏览/下载:51/0
  |  
提交时间:2010/03/08
defects
X-ray diffraction
growth from vapor
oxides
semiconducting II-VI materials
Electronic structures of wurtzite ZnO, BeO, MgO and p-type doping in Zn1-xYxO (Y = Mg, Be)
期刊论文
OAI收割
computational materials science, 2008, 卷号: 44, 期号: 1, 页码: 72-78
Xu, Q
;
Zhang, XW
;
Fan, WJ
;
Li, SS
;
Xia, JB
收藏
  |  
浏览/下载:45/0
  |  
提交时间:2010/03/08
Density functional theory
Electronic structure
Alloy
Doping
Cathodoluminescence and Raman research of V-shape inverted pyramid in HVPE grown GaN film
期刊论文
OAI收割
materials letters, 2007, 卷号: 61, 期号: 18, 页码: 3882-3885
作者:
Wei TB
;
Duan RF
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2010/03/29
GaN