机构

• 半导体研究所 [12]

采集方式

• OAI收割 [12]

内容类型

• 期刊论文 [11]
• 会议论文 [1]

发表日期

• 2010 [1]
• 2006 [3]
• 2005 [1]
• 2001 [3]
• 1999 [1]
• 1998 [1]
• 更多

学科主题

• 半导体材料 [12]

筛选

浏览/检索结果: 共12条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers 期刊论文  OAI收割 thin solid films, THIN SOLID FILMS, 2010, 2010, 卷号: 519, 519, 期号: 1, 页码: 228-230, 228-230 作者:  Hao RT (Hao Ruiting);  Deng SK (Deng Shukang);  Shen LX (Shen Lanxian);  Yang PZ (Yang Peizhi);  Tu JL (Tu Jielei)   |  收藏  |   Large g factors of higher-lying excitons detected with reflectance difference spectroscopy in GaAs-based quantum wells 期刊论文  OAI收割 applied physics letters, 2006, 卷号: 89, 期号: 5, 页码: art.no.051903 Chen YH (Chen Y. H.); Ye XL (Ye X. L.); Xu B (Xu B.); Wang ZG (Wang Z. G.); Yang Z (Yang Z.) 收藏  |   Peculiar photocurrent response due to Gamma-X coupling in a GaAs/AlAs heterostructure 期刊论文  OAI收割 semiconductor science and technology, 2006, 卷号: 21, 期号: 5, 页码: 643-646 Hu B; Zheng HZ; Peng J; Li GR; Li YH 收藏  |   Molecular beam epitaxy InAs dot arrays on InGaAs/GaAs 期刊论文  OAI收割 nanotechnology, 2006, 卷号: 17, 期号: 23, 页码: 5846-5850 Jiao YH (Jiao Y. H.); Wu J (Wu J.); Xu B (Xu B.); Jin P (Jin P.); Hu LJ (Hu L. J.); Liang LY (Liang L. Y.); Ren YY (Ren Y. Y.); Wang ZG (Wang Z. G.) 收藏  |   A model for scattering due to interface roughness in finite quantum wells 期刊论文  OAI收割 semiconductor science and technology, 2005, 卷号: 20, 期号: 12, 页码: 1207-1212 作者:  Han XX 收藏  |   X-ray evidence for Ge/Si(001) island columns in multilayer structure 期刊论文  OAI收割 journal of crystal growth, 2001, 卷号: 223, 期号: 1-2, 页码: 99-103 Huang CJ; Tang Y; Li DZ; Cheng BW; Luo LP; Yu JZ; Wang QM 收藏  |   Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates 期刊论文  OAI收割 journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 399-403 Qu B; Zheng XH; Wang YT; Xu DP; Lin SM; Yang H; Liang JW 收藏  |   Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates 会议论文  OAI收割 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Qu B; Zheng XH; Wang YT; Xu DP; Lin SM; Yang H; Liang JW 收藏  |   TEM study of dislocations in ZnTe/GaAs heterostructure grown by hot-wall epitaxy 期刊论文  OAI收割 defect and diffusion forum, 1999, 卷号: 174, 期号: 0, 页码: 59-65 作者:  Han PD 收藏  |   Dependence of photoluminescence induced by carbon contamination on GeSi structure 期刊论文  OAI收割 journal of crystal growth, 1998, 卷号: 187, 期号: 2, 页码: 197-202 Guo LW; Shi JJ; Cheng WQ; Li YK; Huang Q; Zhou JM 收藏  |